JPS6482651A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS6482651A
JPS6482651A JP24211087A JP24211087A JPS6482651A JP S6482651 A JPS6482651 A JP S6482651A JP 24211087 A JP24211087 A JP 24211087A JP 24211087 A JP24211087 A JP 24211087A JP S6482651 A JPS6482651 A JP S6482651A
Authority
JP
Japan
Prior art keywords
wirings
aluminum
integrated circuit
semiconductor integrated
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24211087A
Other languages
Japanese (ja)
Inventor
Minoru Toyoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP24211087A priority Critical patent/JPS6482651A/en
Publication of JPS6482651A publication Critical patent/JPS6482651A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To miniaturize metal wirings which contain aluminum or as a main ingredient aluminum by covering the upper face and sides of the wirings with conductive polycrystalline silicon films. CONSTITUTION:Metal wirings 3 which contain aluminum or as a main ingredient aluminum are formed on an interlayer insulating film 2 made of SiO2 or the like formed on a semiconductor substrate 1. Conductive polycrystalline silicon films 5 are formed on the upper and side faces of the wirings 3. Thus, even if the wirings 3 are disconnected due to a stress migration, an electric signal is transmitted through the film 5. Accordingly, the miniaturization of the aluminum wirings is facilitated.
JP24211087A 1987-09-25 1987-09-25 Semiconductor integrated circuit device Pending JPS6482651A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24211087A JPS6482651A (en) 1987-09-25 1987-09-25 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24211087A JPS6482651A (en) 1987-09-25 1987-09-25 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS6482651A true JPS6482651A (en) 1989-03-28

Family

ID=17084446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24211087A Pending JPS6482651A (en) 1987-09-25 1987-09-25 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6482651A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6601472B1 (en) * 1999-02-19 2003-08-05 Universitaet Hannover Torsional vibration damper

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6601472B1 (en) * 1999-02-19 2003-08-05 Universitaet Hannover Torsional vibration damper

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