JPS6477174A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6477174A
JPS6477174A JP23392587A JP23392587A JPS6477174A JP S6477174 A JPS6477174 A JP S6477174A JP 23392587 A JP23392587 A JP 23392587A JP 23392587 A JP23392587 A JP 23392587A JP S6477174 A JPS6477174 A JP S6477174A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
minutes
less
film
capability
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23392587A
Other languages
Japanese (ja)
Inventor
Ryozo Nakayama
Riichiro Shirata
Masaki Momotomi
Satoshi Inoue
Ryohei Kirisawa
Yoshihisa Iwata
Fujio Masuoka
Hisakazu Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP23392587A priority Critical patent/JPS6477174A/en
Publication of JPS6477174A publication Critical patent/JPS6477174A/en
Pending legal-status Critical Current

Links

Landscapes

  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To improve an insulating film under a polycrystalline silicon electrode in its capability to withstand electrical stress by a method wherein impurity concentration in a polycrystalline silicon film is reduced and thermal processing conditions are eased in the manufacture of various semiconductor elements provided with polycrystalline silicon electrodes. CONSTITUTION:An 80-120Angstrom thick silicon oxide film 2 is formed by thermal oxidation on a single-crystal silicon substrate 1 and, on the film 2, an approximately 4000Angstrom thick polycrystalline silicon electrode 3 is built by CVD, to be doped with 1X10<17>-3X10<20>/cm<3> of phosphorus before being patterned. A thermal process to follow the patterning process will continue 10 minutes or less at 1000 deg.C, 20 minutes or less at 950 deg.C, and 40 minutes or less at 900 deg.C. This technique improves a first gate insulating film in its capability to withstand electrical stress.
JP23392587A 1987-09-18 1987-09-18 Manufacture of semiconductor device Pending JPS6477174A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23392587A JPS6477174A (en) 1987-09-18 1987-09-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23392587A JPS6477174A (en) 1987-09-18 1987-09-18 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6477174A true JPS6477174A (en) 1989-03-23

Family

ID=16962751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23392587A Pending JPS6477174A (en) 1987-09-18 1987-09-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6477174A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01225365A (en) * 1988-03-04 1989-09-08 Fujitsu Ltd Semiconductor storage device and writing thereto
JPH01233772A (en) * 1988-03-14 1989-09-19 Seiko Instr & Electron Ltd Manufacture of semiconductor device
JPH01292865A (en) * 1988-05-20 1989-11-27 Fujitsu Ltd Manufacture of semiconductor device
US5415553A (en) * 1992-11-13 1995-05-16 Szmidla; Andrew Device for identifying an object using an omnidirectional bar code
US5786583A (en) * 1996-02-16 1998-07-28 Intermec Corporation Method and apparatus for locating and decoding machine-readable symbols

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6052059A (en) * 1983-08-31 1985-03-23 Toshiba Corp Manufacture of semiconductor device
JPS60124875A (en) * 1983-12-09 1985-07-03 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS60154672A (en) * 1984-01-25 1985-08-14 Nec Corp Mis field effect semiconductor device and manufacture thereof
JPS6184868A (en) * 1984-10-02 1986-04-30 Nec Corp Nonvolatile semiconductor memory device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6052059A (en) * 1983-08-31 1985-03-23 Toshiba Corp Manufacture of semiconductor device
JPS60124875A (en) * 1983-12-09 1985-07-03 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS60154672A (en) * 1984-01-25 1985-08-14 Nec Corp Mis field effect semiconductor device and manufacture thereof
JPS6184868A (en) * 1984-10-02 1986-04-30 Nec Corp Nonvolatile semiconductor memory device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01225365A (en) * 1988-03-04 1989-09-08 Fujitsu Ltd Semiconductor storage device and writing thereto
JPH01233772A (en) * 1988-03-14 1989-09-19 Seiko Instr & Electron Ltd Manufacture of semiconductor device
JPH01292865A (en) * 1988-05-20 1989-11-27 Fujitsu Ltd Manufacture of semiconductor device
US5415553A (en) * 1992-11-13 1995-05-16 Szmidla; Andrew Device for identifying an object using an omnidirectional bar code
US5786583A (en) * 1996-02-16 1998-07-28 Intermec Corporation Method and apparatus for locating and decoding machine-readable symbols

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