JPS6477174A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6477174A JPS6477174A JP23392587A JP23392587A JPS6477174A JP S6477174 A JPS6477174 A JP S6477174A JP 23392587 A JP23392587 A JP 23392587A JP 23392587 A JP23392587 A JP 23392587A JP S6477174 A JPS6477174 A JP S6477174A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- minutes
- less
- film
- capability
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Non-Volatile Memory (AREA)
- Electrodes Of Semiconductors (AREA)
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To improve an insulating film under a polycrystalline silicon electrode in its capability to withstand electrical stress by a method wherein impurity concentration in a polycrystalline silicon film is reduced and thermal processing conditions are eased in the manufacture of various semiconductor elements provided with polycrystalline silicon electrodes. CONSTITUTION:An 80-120Angstrom thick silicon oxide film 2 is formed by thermal oxidation on a single-crystal silicon substrate 1 and, on the film 2, an approximately 4000Angstrom thick polycrystalline silicon electrode 3 is built by CVD, to be doped with 1X10<17>-3X10<20>/cm<3> of phosphorus before being patterned. A thermal process to follow the patterning process will continue 10 minutes or less at 1000 deg.C, 20 minutes or less at 950 deg.C, and 40 minutes or less at 900 deg.C. This technique improves a first gate insulating film in its capability to withstand electrical stress.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23392587A JPS6477174A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23392587A JPS6477174A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6477174A true JPS6477174A (en) | 1989-03-23 |
Family
ID=16962751
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23392587A Pending JPS6477174A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6477174A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01225365A (en) * | 1988-03-04 | 1989-09-08 | Fujitsu Ltd | Semiconductor storage device and writing thereto |
JPH01233772A (en) * | 1988-03-14 | 1989-09-19 | Seiko Instr & Electron Ltd | Manufacture of semiconductor device |
JPH01292865A (en) * | 1988-05-20 | 1989-11-27 | Fujitsu Ltd | Manufacture of semiconductor device |
US5415553A (en) * | 1992-11-13 | 1995-05-16 | Szmidla; Andrew | Device for identifying an object using an omnidirectional bar code |
US5786583A (en) * | 1996-02-16 | 1998-07-28 | Intermec Corporation | Method and apparatus for locating and decoding machine-readable symbols |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6052059A (en) * | 1983-08-31 | 1985-03-23 | Toshiba Corp | Manufacture of semiconductor device |
JPS60124875A (en) * | 1983-12-09 | 1985-07-03 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS60154672A (en) * | 1984-01-25 | 1985-08-14 | Nec Corp | Mis field effect semiconductor device and manufacture thereof |
JPS6184868A (en) * | 1984-10-02 | 1986-04-30 | Nec Corp | Nonvolatile semiconductor memory device |
-
1987
- 1987-09-18 JP JP23392587A patent/JPS6477174A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6052059A (en) * | 1983-08-31 | 1985-03-23 | Toshiba Corp | Manufacture of semiconductor device |
JPS60124875A (en) * | 1983-12-09 | 1985-07-03 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS60154672A (en) * | 1984-01-25 | 1985-08-14 | Nec Corp | Mis field effect semiconductor device and manufacture thereof |
JPS6184868A (en) * | 1984-10-02 | 1986-04-30 | Nec Corp | Nonvolatile semiconductor memory device |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01225365A (en) * | 1988-03-04 | 1989-09-08 | Fujitsu Ltd | Semiconductor storage device and writing thereto |
JPH01233772A (en) * | 1988-03-14 | 1989-09-19 | Seiko Instr & Electron Ltd | Manufacture of semiconductor device |
JPH01292865A (en) * | 1988-05-20 | 1989-11-27 | Fujitsu Ltd | Manufacture of semiconductor device |
US5415553A (en) * | 1992-11-13 | 1995-05-16 | Szmidla; Andrew | Device for identifying an object using an omnidirectional bar code |
US5786583A (en) * | 1996-02-16 | 1998-07-28 | Intermec Corporation | Method and apparatus for locating and decoding machine-readable symbols |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6477174A (en) | Manufacture of semiconductor device | |
JPS55157241A (en) | Manufacture of semiconductor device | |
JPS647564A (en) | Formation of gate electrode of mos transistor | |
JPS5585041A (en) | Semiconductor device and its preparation | |
JPS572519A (en) | Manufacture of semiconductor device | |
JPS55107229A (en) | Method of manufacturing semiconductor device | |
JPS6489457A (en) | Manufacture of semiconductor device | |
JPS64761A (en) | Semiconductor device | |
JPS6474758A (en) | Insulated gate field-effect transistor | |
JPS55125626A (en) | Production of semiconductor device | |
JPS6453474A (en) | Superconducting transistor | |
JPS5650573A (en) | Mis tunnel diode type mosfet | |
JPS5582451A (en) | Manufacture of semiconductor device | |
JPS5559778A (en) | Method of fabricating semiconductor device | |
JPS568846A (en) | Semiconductor integrated circuit | |
JPS6459858A (en) | Manufacture of semiconductor device | |
JPS6442864A (en) | Thin film transistor and manufacture thereof | |
JPS6465875A (en) | Thin film transistor and manufacture thereof | |
JPS6420667A (en) | Semiconductor storage device | |
JPS56160070A (en) | Manufacture of insulated gate type field effect transistor | |
JPS57102052A (en) | Manufacture of semiconductor device | |
JPS56160071A (en) | Manufacture of insulated gate type field effect transistor | |
JPS5772342A (en) | Manufacturing of semiconductor device | |
JPS5680172A (en) | Semiconductor device | |
JPS6468925A (en) | Manufacture of semiconductor device |