JPS5680172A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5680172A
JPS5680172A JP15789879A JP15789879A JPS5680172A JP S5680172 A JPS5680172 A JP S5680172A JP 15789879 A JP15789879 A JP 15789879A JP 15789879 A JP15789879 A JP 15789879A JP S5680172 A JPS5680172 A JP S5680172A
Authority
JP
Japan
Prior art keywords
gate
gate region
region
doped
selective oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15789879A
Other languages
Japanese (ja)
Inventor
Yasutaka Nakasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP15789879A priority Critical patent/JPS5680172A/en
Publication of JPS5680172A publication Critical patent/JPS5680172A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain a high degree of accuracy readily in the control of the gate interval and the opening of the contact hole by employing a selective oxidation method to form the gate region of a static induction transistor after doping impurity ions of the gate region. CONSTITUTION:To form the gate region of a static induction transistor (SIT), the selective oxidation method is empolyed after the gate region impurity ions are doped. For example, on a P type substrate 201, an N type epitaxial layer 202 is provided and photoetched for selective oxidation, and then impurities are doped to form a gate region 203. After oxidation has been performed to form a field oxide film 206, impurities are doped to form a P type region 204 to connect to the gate and an N type region 205 to be a source or drain respectively. Moreover, a wiring 207 is formed to obtain a SIT element.
JP15789879A 1979-12-04 1979-12-04 Semiconductor device Pending JPS5680172A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15789879A JPS5680172A (en) 1979-12-04 1979-12-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15789879A JPS5680172A (en) 1979-12-04 1979-12-04 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5680172A true JPS5680172A (en) 1981-07-01

Family

ID=15659826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15789879A Pending JPS5680172A (en) 1979-12-04 1979-12-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5680172A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4868184A (en) * 1971-12-20 1973-09-17
JPS49134282A (en) * 1973-04-25 1974-12-24
JPS5090290A (en) * 1973-12-11 1975-07-19

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4868184A (en) * 1971-12-20 1973-09-17
JPS49134282A (en) * 1973-04-25 1974-12-24
JPS5090290A (en) * 1973-12-11 1975-07-19

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