JPS5680172A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5680172A JPS5680172A JP15789879A JP15789879A JPS5680172A JP S5680172 A JPS5680172 A JP S5680172A JP 15789879 A JP15789879 A JP 15789879A JP 15789879 A JP15789879 A JP 15789879A JP S5680172 A JPS5680172 A JP S5680172A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- gate region
- region
- doped
- selective oxidation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 4
- 230000003647 oxidation Effects 0.000 abstract 4
- 238000007254 oxidation reaction Methods 0.000 abstract 4
- 230000006698 induction Effects 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000003068 static effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To obtain a high degree of accuracy readily in the control of the gate interval and the opening of the contact hole by employing a selective oxidation method to form the gate region of a static induction transistor after doping impurity ions of the gate region. CONSTITUTION:To form the gate region of a static induction transistor (SIT), the selective oxidation method is empolyed after the gate region impurity ions are doped. For example, on a P type substrate 201, an N type epitaxial layer 202 is provided and photoetched for selective oxidation, and then impurities are doped to form a gate region 203. After oxidation has been performed to form a field oxide film 206, impurities are doped to form a P type region 204 to connect to the gate and an N type region 205 to be a source or drain respectively. Moreover, a wiring 207 is formed to obtain a SIT element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15789879A JPS5680172A (en) | 1979-12-04 | 1979-12-04 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15789879A JPS5680172A (en) | 1979-12-04 | 1979-12-04 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5680172A true JPS5680172A (en) | 1981-07-01 |
Family
ID=15659826
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15789879A Pending JPS5680172A (en) | 1979-12-04 | 1979-12-04 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5680172A (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4868184A (en) * | 1971-12-20 | 1973-09-17 | ||
JPS49134282A (en) * | 1973-04-25 | 1974-12-24 | ||
JPS5090290A (en) * | 1973-12-11 | 1975-07-19 |
-
1979
- 1979-12-04 JP JP15789879A patent/JPS5680172A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4868184A (en) * | 1971-12-20 | 1973-09-17 | ||
JPS49134282A (en) * | 1973-04-25 | 1974-12-24 | ||
JPS5090290A (en) * | 1973-12-11 | 1975-07-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1078798A (en) | Improvements in or relating to field effect transistor devices | |
JPS55151363A (en) | Mos semiconductor device and fabricating method of the same | |
JPS5680172A (en) | Semiconductor device | |
JPS522289A (en) | Method of manufacturing insulation gate-type semiconductor integration circuit device | |
JPS5585041A (en) | Semiconductor device and its preparation | |
JPS6489457A (en) | Manufacture of semiconductor device | |
JPS55107229A (en) | Method of manufacturing semiconductor device | |
JPS5559778A (en) | Method of fabricating semiconductor device | |
JPS6465875A (en) | Thin film transistor and manufacture thereof | |
JPS5530867A (en) | Method of making semiconductor device | |
JPS5721855A (en) | Manufacture of complementary mos semiconductor device | |
JPS577968A (en) | Semiconductor device | |
JPS55125648A (en) | Semiconductor integrated circuit | |
JPS5753958A (en) | Semiconductor device | |
JPS5651871A (en) | Manufacture of complementary type mos semiconductor device | |
JPS5627923A (en) | Manufacture of semiconductor device | |
JPS55166959A (en) | Manufacture of mis semiconductor device | |
JPS57132357A (en) | Manufacture of semiconductor element | |
JPS5739579A (en) | Mos semiconductor device and manufacture thereof | |
JPS5627924A (en) | Semiconductor device and its manufacture | |
JPS55157264A (en) | Manufacturing method for semiconductor device | |
JPS55151332A (en) | Fabricating method of semiconductor device | |
JPS5748269A (en) | Semiconductor device | |
JPS5599778A (en) | Insulated-gate type field effect transistor | |
JPS57201080A (en) | Semiconductor device |