JPS6476719A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6476719A
JPS6476719A JP23232087A JP23232087A JPS6476719A JP S6476719 A JPS6476719 A JP S6476719A JP 23232087 A JP23232087 A JP 23232087A JP 23232087 A JP23232087 A JP 23232087A JP S6476719 A JPS6476719 A JP S6476719A
Authority
JP
Japan
Prior art keywords
film
baked
buried
contact hole
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23232087A
Other languages
Japanese (ja)
Inventor
Yoshitaka Narita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP23232087A priority Critical patent/JPS6476719A/en
Publication of JPS6476719A publication Critical patent/JPS6476719A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To flatten the surface of a buried polycrystalline silicon film by coating the film formed with an insulating film opened with a contact hole with a material having the same etching ratio as that of the film on the film, flattening the film, etching back it, and retaining the silicon in the hole. CONSTITUTION:After phosphorus of N-type impurity is diffused by a thermally diffusing method in a grown polycrystalline silicon film, the whole surface of the film 6 is coated by a spin ON method with a silica glass film 5 containing phosphorus, and flattened. Thereafter, it is baked in a nitrogen atmosphere, an organic solvent is scattered, and the film 6 is baked and solidified. Then, the films 6, 5 are etched back until an interlayer silicon oxide film 3 of a lower layer is exposed. As a result, the film 5 in a contact hole 4 is buried in the flattened state.
JP23232087A 1987-09-18 1987-09-18 Manufacture of semiconductor device Pending JPS6476719A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23232087A JPS6476719A (en) 1987-09-18 1987-09-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23232087A JPS6476719A (en) 1987-09-18 1987-09-18 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6476719A true JPS6476719A (en) 1989-03-22

Family

ID=16937353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23232087A Pending JPS6476719A (en) 1987-09-18 1987-09-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6476719A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04208529A (en) * 1990-01-12 1992-07-30 Nec Corp Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59227118A (en) * 1983-06-08 1984-12-20 Matsushita Electronics Corp Manufacture of semiconductor device
JPS60140818A (en) * 1983-12-28 1985-07-25 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59227118A (en) * 1983-06-08 1984-12-20 Matsushita Electronics Corp Manufacture of semiconductor device
JPS60140818A (en) * 1983-12-28 1985-07-25 Fujitsu Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04208529A (en) * 1990-01-12 1992-07-30 Nec Corp Manufacture of semiconductor device

Similar Documents

Publication Publication Date Title
US3664896A (en) Deposited silicon diffusion sources
CA1102011A (en) High sheet resistance structure for high density integrated circuits
JPS5467778A (en) Production of semiconductor device
US3746587A (en) Method of making semiconductor diodes
US3514845A (en) Method of making integrated circuits with complementary elements
US3842490A (en) Semiconductor structure with sloped side walls and method
JPS6476719A (en) Manufacture of semiconductor device
JPS6428962A (en) Semiconductor device and manufacture thereof
JPS55124238A (en) Method of fabricating semiconductor device
JPS5538082A (en) Formation for buried layer of semiconductor device
JPS55145356A (en) Fabricating method of semiconductor device
JPS5559778A (en) Method of fabricating semiconductor device
JPS648642A (en) Semiconductor device and manufacture thereof
JPS6430264A (en) Manufacture of semiconductor device
JPS6474754A (en) Semiconductor device
JPS5562748A (en) Method of fabricating semiconductor device
JPS5457877A (en) Semiconductor device
JPS57204145A (en) Manufacture of semiconductor device
JPS5552269A (en) Preparation of semiconductor device
JPS6481334A (en) Manufacture of semiconductor device
JPS551157A (en) Method of fabricating semiconductor device
JPS56104476A (en) Manufacture of semiconductor device
JPS56135973A (en) Manufacture of semiconductor device
JPS55157239A (en) Manufacture of semiconductor device
JPS5748270A (en) Semiconductor device