JPS5552269A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS5552269A JPS5552269A JP12555878A JP12555878A JPS5552269A JP S5552269 A JPS5552269 A JP S5552269A JP 12555878 A JP12555878 A JP 12555878A JP 12555878 A JP12555878 A JP 12555878A JP S5552269 A JPS5552269 A JP S5552269A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- diffusion layers
- substrate
- layers
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To reduce gate electrode lengths and further reduce the dimensions of connecting parts between diffusion layers and metal wiring by selectively oxidizing polycrystalline silicon to smooth the form of the steps of the plycrystalline silicon.
CONSTITUTION: A gate insulating film 103 is grown on the surface of a semiconductor substrate 101, and then openings 104∼106 are formed. Next, a polycrysalline silicon layer 107 and silicon nitride film layers 108∼111 are formed. Next, by heat-treating the silicon substrate 101 in a high temperature oxidizing atmosphere after N-type source and drain diffusion layers 112∼114 are formed, the polycrystalline layer 107 is changed into a silicon oxide layer, and further, a gate electrode 119 and conductor layers 120 and 121 which connect electrically with the source and the drain diffusion layers 112 and 113 are formed. At the same time, phosphor is diffused into the substrate 101 through the openins 104∼106 and diffusion layers 116∼ 118 of high impurity concentration are formed. Next, the substrate is heat-treated and then metal wirings 123 and 124 are formed.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12555878A JPS5552269A (en) | 1978-10-11 | 1978-10-11 | Preparation of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12555878A JPS5552269A (en) | 1978-10-11 | 1978-10-11 | Preparation of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5552269A true JPS5552269A (en) | 1980-04-16 |
Family
ID=14913161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12555878A Pending JPS5552269A (en) | 1978-10-11 | 1978-10-11 | Preparation of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5552269A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5284981A (en) * | 1976-01-06 | 1977-07-14 | Mitsubishi Electric Corp | Production of insulated gate type semiconductor device |
| JPS534480A (en) * | 1976-07-02 | 1978-01-17 | Nippon Telegr & Teleph Corp <Ntt> | Production of semiconductor device having mis transistors |
| JPS5320776A (en) * | 1976-08-10 | 1978-02-25 | Mitsubishi Electric Corp | Production of metal insulation film semiconductor device |
-
1978
- 1978-10-11 JP JP12555878A patent/JPS5552269A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5284981A (en) * | 1976-01-06 | 1977-07-14 | Mitsubishi Electric Corp | Production of insulated gate type semiconductor device |
| JPS534480A (en) * | 1976-07-02 | 1978-01-17 | Nippon Telegr & Teleph Corp <Ntt> | Production of semiconductor device having mis transistors |
| JPS5320776A (en) * | 1976-08-10 | 1978-02-25 | Mitsubishi Electric Corp | Production of metal insulation film semiconductor device |
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