JPS6476606A - Dielectric material - Google Patents
Dielectric materialInfo
- Publication number
- JPS6476606A JPS6476606A JP23139887A JP23139887A JPS6476606A JP S6476606 A JPS6476606 A JP S6476606A JP 23139887 A JP23139887 A JP 23139887A JP 23139887 A JP23139887 A JP 23139887A JP S6476606 A JPS6476606 A JP S6476606A
- Authority
- JP
- Japan
- Prior art keywords
- deposition
- crystal
- vacuum
- values
- torr
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
PURPOSE:To obtain a dielectric rate and an insulation withstand voltage which are suitable for a desired application by forming a layer of dielectric on a thin film capacitor, semiconductor element or the like by ion beam deposition and controlling an accelerating voltage and/or an ionizing current to be values corresponding to crystal conditions existing simultaneously. CONSTITUTION:The temperature of a substrate 1 provided in a vacuum container 7 is adjusted as predetermined, a heating device 5 where deposition material is put is heated, the degree of vacuum in the container 7 is kept at 10<-6>Torr, and steam pressure of vaporizing material is kept at a low vacuum of about 10<-5>Torr. Next, for setting an accelerating voltage and an ionizing current, these are preliminarily determined by experiment to obtain desired cristal conditions, and control values are determined accordingly. That is, the values are first set corresponding to an amolphous part 8, where deposition is performed for a predetermined time, then deposition is performed corresponding to a crystal part 9, and deposition is performed corresponding to a crystal part 10, so these are arranged in lamination. Crystal structure of perovskite type can thus be formed at low film forming temperatures.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23139887A JPS6476606A (en) | 1987-09-16 | 1987-09-16 | Dielectric material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23139887A JPS6476606A (en) | 1987-09-16 | 1987-09-16 | Dielectric material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6476606A true JPS6476606A (en) | 1989-03-22 |
Family
ID=16922980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23139887A Pending JPS6476606A (en) | 1987-09-16 | 1987-09-16 | Dielectric material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6476606A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0218804A (en) * | 1988-07-07 | 1990-01-23 | Matsushita Electric Ind Co Ltd | Manufacture of high dielectric thin film |
| US5827797A (en) * | 1989-08-28 | 1998-10-27 | Cass; Richard B. | Method for producing refractory filaments |
| WO2002021588A1 (en) * | 2000-09-01 | 2002-03-14 | Japan Science And Technology Corporation | Process for producing organic film by coevaporation |
-
1987
- 1987-09-16 JP JP23139887A patent/JPS6476606A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0218804A (en) * | 1988-07-07 | 1990-01-23 | Matsushita Electric Ind Co Ltd | Manufacture of high dielectric thin film |
| US5827797A (en) * | 1989-08-28 | 1998-10-27 | Cass; Richard B. | Method for producing refractory filaments |
| WO2002021588A1 (en) * | 2000-09-01 | 2002-03-14 | Japan Science And Technology Corporation | Process for producing organic film by coevaporation |
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