JPH0528866A - Film forming method for dielectric substance film - Google Patents
Film forming method for dielectric substance filmInfo
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- JPH0528866A JPH0528866A JP20111891A JP20111891A JPH0528866A JP H0528866 A JPH0528866 A JP H0528866A JP 20111891 A JP20111891 A JP 20111891A JP 20111891 A JP20111891 A JP 20111891A JP H0528866 A JPH0528866 A JP H0528866A
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は誘電体の成膜方法に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric film forming method.
【０００２】[0002]
【従来の技術およびその課題】ＢａＴｉＯ3、ＳｒＴｉ
Ｏ3、ＰｂＴｉＯ3、およびその一部をＬａ、Ｚｒで置換
したＰｂ（Ｚｒ、Ｔｉ）Ｏ3、（Ｐｂ、Ｌａ）（Ｚｒ、
Ｔｉ）Ｏ3あるいはＢｉ4Ｔｉ3Ｏ12などの酸化物誘電体
材料は、コンデンサ、圧電素子、電気的光学素子などの
種々の機能デバイスに応用されている。近年デバイスの
小型化、高集積化の要請に対応するために、これらの材
料の薄膜化の試みがなされ、焦電型赤外線センサー、超
音波センサー、光スイッチなどで薄膜を用いたデバイス
が試作されている。さらに高性能のデバイスを作製する
ためには、今まで以上に高品質な誘電体膜が必要であ
り、現在様々な手法により検討が行われている。なかで
も真空蒸着法は高純度なメタルを原料として用いること
ができることから高品質な膜を得ることができると期待
され、１９６３年９月発行のジャーナル・オブ・ザ・エ
レクトロケミカル・ソサイアティ誌（Journal of The E
lectrochemical Society ）９６９〜９７３頁などに報
告されているように、古くからその研究が行われている
手法である。2. Description of the Related Art BaTiO 3 , SrTi
O 3 , PbTiO 3 , and Pb (Zr, Ti) O 3 (Pb, La) (Zr,
Oxide dielectric materials such as Ti) O 3 or Bi 4 Ti 3 O 12 have been applied to various functional devices such as capacitors, piezoelectric elements and electro-optical elements. In recent years, attempts have been made to reduce the thickness of these materials in order to meet the demands for device miniaturization and high integration, and devices using thin films for pyroelectric infrared sensors, ultrasonic sensors, optical switches, etc. have been prototyped. ing. In order to manufacture a device with higher performance, a higher quality dielectric film than ever before is required, and various methods are currently under study. Among them, the vacuum evaporation method is expected to be able to obtain high quality films because it can use high-purity metal as a raw material, and the Journal of the Electrochemical Society published in September 1963 (Journal of The E
This is a method that has been studied for a long time, as reported in the Electrochemical Society) 969-973.
【０００３】特に真空蒸着法の中でも原料を独立に供給
して成膜を行うことができる多元蒸着法は精密な組成制
御が必要とされるＰｂ（Ｚｒ、Ｔｉ）Ｏ3、（Ｐｂ、Ｌ
ａ）（Ｚｒ、Ｔｉ）Ｏ3、（Ｂａ、Ｓｒ）ＴｉＯ3などの
多元系の誘電体の有効な成膜手法として期待されてお
り、１９８９年２月発行のアプライド・フィジックス・
レター誌（Applied Physics Letters)５２７〜５２９頁
で、成膜中に酸素プラズマを用いて原料を活性化して基
板に供給することにより、残留分極の大きさが５μＣ／
ｃｍ2、坑電界１５ｋＶ／ｃｍというような値を示すＢ
ａＴｉＯ3膜が得られることも報告されている。しか
し、多くの期待に反して、他の多元系の誘電体の成膜に
関しては報告がなく、ＢａＴｉＯ3など成膜に関して報
告が行われているものでも、他の成膜方法よりも大きな
優位性を示す結果が得られているものはない。これは下
記に示すように、
低い酸素分圧で成膜を行うと膜が充分に酸化されない
ために充分な誘電性を示さない。
成膜中に酸素分圧を高くしたりまたプラズマ等により
活性な酸素を用いて成膜中に膜を酸化しようとすると、
同時に原料も酸化されてしまい、その結果、安定に原料
の供給ができなくなり、組成の制御ができない。
といった相反する問題を従来の真空蒸着法が含んでいた
ことに原因がある。今後、この２つの問題を同時に解決
する方法が見つからない限り多元蒸着法の特徴を有効に
生かすことはできない。以上のように、多元蒸着法にお
いてバルクと同等の特性を持つ膜を得ることのできない
原因は、成膜中に組成を精度よく制御しながら同時に膜
の酸化を充分に行うことができないところにあり、本発
明はこのような従来の問題点を解決することを目的とす
る。In particular, among the vacuum vapor deposition methods, the multi-source vapor deposition method capable of independently supplying raw materials to form a film requires Pb (Zr, Ti) O 3 , (Pb, L) for which precise composition control is required.
a) It is expected as an effective film forming method for multi-element dielectrics such as (Zr, Ti) O 3 and (Ba, Sr) TiO 3, and is applied by Applied Physics Co., Ltd. issued in February 1989.
In Applied Physics Letters, pages 527 to 529, the residual polarization is reduced to 5 μC / cm by activating a raw material by using oxygen plasma during film formation and supplying it to the substrate.
cm 2 and an electric field of 15 kV / cm B
It has also been reported that an aTiO 3 film can be obtained. However, contrary to many expectations, there are no reports on film formation of other multi-element dielectrics, and even if there are reports on film formation such as BaTiO 3 , there is a great advantage over other film formation methods. No results have been obtained. As shown below, when a film is formed with a low oxygen partial pressure, the film does not oxidize sufficiently and thus does not show sufficient dielectric properties. If you try to increase the oxygen partial pressure during film formation, or try to oxidize the film during film formation using active oxygen such as plasma,
At the same time, the raw material is also oxidized, and as a result, the raw material cannot be stably supplied and the composition cannot be controlled. This is because the conventional vacuum deposition method includes the contradictory problem. In the future, unless a method for solving these two problems at the same time is found, the characteristics of the multi-source vapor deposition method cannot be effectively utilized. As described above, the reason why it is not possible to obtain a film having the same characteristics as a bulk in the multi-source deposition method is that the film cannot be sufficiently oxidized while controlling the composition accurately during film formation. SUMMARY OF THE INVENTION The present invention aims to solve such conventional problems.
【０００４】[0004]
【課題を解決するための手段】本発明は、基板上に、Ａ
ＢＯ3で表され、ＡとしてＳｒ、Ｂａ、Ｐｂ、Ｌａ、Ｌ
ｉ、Ｂｉから選ばれる一種類以上の元素、ＢとしてＴ
ｉ、Ｚｒ、Ｔａ、Ｎｂから選ばれる一種類以上の元素か
らなる誘電体を多元蒸着法により成膜し、成膜後、膜の
酸化を行うことよりなる誘電体の成膜方法であって、５
００±２００℃の基板温度、２×１０-5Ｔｏｒｒ以下の
酸素分圧中で誘電体膜を成膜した後、５００±２００℃
の基板温度、１×１０-4Ｔｏｒｒ以上の酸素分圧中で５
分間以上膜の酸化を行うことを特徴とする誘電体の成膜
方法である。また上記発明において、酸素ガスをプラズ
マにより活性化させて膜の酸化を行うことを好適とす
る。SUMMARY OF THE INVENTION The present invention comprises a substrate, A
Represented by BO 3 , A is Sr, Ba, Pb, La, L
One or more elements selected from i and Bi, T as B
A method for forming a dielectric material, comprising: forming a dielectric film made of one or more elements selected from i, Zr, Ta, and Nb by a multi-source deposition method, and oxidizing the film after the film formation. 5
After forming a dielectric film at a substrate temperature of 00 ± 200 ° C. and an oxygen partial pressure of 2 × 10 −5 Torr or less, 500 ± 200 ° C.
Substrate temperature of 1 × 10 −4 Torr or more at an oxygen partial pressure of 5
A method for forming a dielectric film is characterized in that the film is oxidized for not less than a minute. In the above invention, it is preferable that the film be oxidized by activating oxygen gas with plasma.
【０００５】[0005]
【実施例】次に本発明の実施例について図面を参照して
説明する。図１に本発明の方法に用いられる誘電体の成
長装置の一例の構造を示す。成長装置は原料のメタルの
ある原料室１と基板８の設置されている成長室２に分か
れており、それぞれ独立に排気される。融点が低く蒸気
圧が高い原料Ａは分子線セル３、融点の高い原料ＢはＥ
−Ｇｕｎ４により基板に供給される。成長室２にはプラ
ズマを発生させるためのコイル５が設置されている。本
発明に基づいて、Ａの原料としてＳｒのメタルを、Ｂの
原料としてＴｉのメタルを用いてＳｒＴｉＯ3の成膜を
行った。Ｓｒの入っている分子線セル３の温度は３５０
℃とした。基板温度５００±２００℃、２×１０-5Ｔｏ
ｒｒの酸素分圧で８０ｎｍの膜を作製する。成膜終了
後、基板温度を保持したまま成長室内の酸素分圧が１×
１０-4Ｔｏｒｒ以上になるように酸素ガスを導入し、５
分以上膜の酸化を行った。また必要に応じてＲＦ誘導プ
ラズマを発生させ、酸素を活性化した。その後、酸素分
圧を保ったままで基板を冷却した。Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 shows the structure of an example of a dielectric growth apparatus used in the method of the present invention. The growth apparatus is divided into a raw material chamber 1 containing a raw material metal and a growth chamber 2 in which a substrate 8 is installed, and each is evacuated independently. Raw material A with a low melting point and high vapor pressure is molecular beam cell 3, raw material B with a high melting point is E
-Supplied to the substrate by Gun4. A coil 5 for generating plasma is installed in the growth chamber 2. According to the present invention, SrTiO 3 was deposited using Sr metal as the A raw material and Ti metal as the B raw material. The temperature of the molecular beam cell 3 containing Sr is 350.
℃ was made. Substrate temperature 500 ± 200 ℃, 2 × 10 -5 To
A film with a thickness of 80 nm is formed with an oxygen partial pressure of rr. After the film formation, the oxygen partial pressure in the growth chamber is 1 × while maintaining the substrate temperature.
Oxygen gas is introduced so as to be 10 -4 Torr or more, and 5
The film was oxidized for more than a minute. If necessary, RF induction plasma was generated to activate oxygen. Then, the substrate was cooled while keeping the oxygen partial pressure.
【０００６】酸素もしくは活性な酸素を装置内に導入し
て蒸着法により酸化物の成膜を行う場合、原料の酸化に
よる蒸発量の変化がおきる。Ｅ−Ｇｕｎ加熱の場合は入
力パワーによって原料の供給量を細かく制御することが
できるが、分子線セルの温度を変化させ蒸発量を制御す
る場合は温度変化に対して蒸発量の変化の応答が遅く現
実的ではない。そこでなるべく原料の蒸発量が変化しな
い低い酸素分圧中で、しかも活性な酸素等は使わずに成
膜することが望ましい。図２は本実施例で行った酸素分
圧２×１０-5Ｔｏｒｒにおける分子線セルによるＳｒの
基板への堆積速度の時間変化を示したもので、Ｓｒの堆
積量は約３０分で１０％減少している。この程度の変化
ならばＥ−Ｇｕｎ加熱方式でＴｉの蒸発量を制御するこ
とにより膜厚方向に対してＳｒ、Ｔｉの組成分布が均一
な膜を得ることが可能である。図３はＴｉの蒸発量を制
御して成膜を行い、作製したＳｒＴｉＯ3膜の組成プロ
ファイルである。Ｔｉの蒸発量を制御することにより組
成の均一な膜ができている。一方、酸素分圧が２×１０
-5Ｔｏｒｒより大きくなるとＳｒ堆積量の減少量は著し
く大きくなり、かつ不規則になるので、組成の制御が困
難になる。したがって成膜中の酸素分圧を２×１０-5Ｔ
ｏｒｒ以下で成膜することが望ましい。When oxygen or active oxygen is introduced into the apparatus to form an oxide film by the vapor deposition method, the amount of evaporation changes due to the oxidation of the raw material. In the case of E-Gun heating, the supply amount of the raw material can be finely controlled by the input power, but when the evaporation amount is controlled by changing the temperature of the molecular beam cell, the response of the change in the evaporation amount to the temperature change is Slow and unrealistic. Therefore, it is desirable to form a film in a low oxygen partial pressure where the amount of evaporation of the raw material does not change, and without using active oxygen or the like. FIG. 2 shows the time-dependent change in the deposition rate of Sr on the substrate by the molecular beam cell at the oxygen partial pressure of 2 × 10 −5 Torr performed in this example. The deposition amount of Sr was 10% in about 30 minutes. is decreasing. With such a change, it is possible to obtain a film having a uniform composition distribution of Sr and Ti in the film thickness direction by controlling the evaporation amount of Ti by the E-Gun heating method. FIG. 3 is a composition profile of a SrTiO 3 film produced by forming a film while controlling the amount of Ti vaporized. A film having a uniform composition is formed by controlling the evaporation amount of Ti. On the other hand, the oxygen partial pressure is 2 × 10
If it is larger than -5 Torr, the amount of decrease in the Sr deposition amount becomes extremely large and becomes irregular, which makes it difficult to control the composition. Therefore, the oxygen partial pressure during film formation is 2 × 10 −5 T
It is desirable to form a film at or or less.
【０００７】表１〜表２に今回行った成膜及び酸化処理
における基板温度、酸化時間、酸素分圧の条件をまとめ
た。酸化時間とは成膜終了後に基板温度を保持した時間
であり冷却時間を含まない。酸素分圧は成膜後に酸化を
行った時の酸素分圧を意味する。また膜が絶縁性を示す
か否かを判断する目安として誘電特性を測定し、誘電率
とｔａｎδを求めた。その結果を併せて表１〜表２に示
す。基板温度が２００℃以下では膜が結晶化しないため
に酸素分圧、酸化時間を変化させても導通してしまい、
誘電率を測定することができなかった。一方、基板温度
が８００℃では酸化中に膜表面にクラックが生じてしま
うためすべて導通してしまった。また、３００℃、７０
０℃の基板温度でも、酸化時間が５分以上、また酸素分
圧が１×１０-4Ｔｏｒｒ以上でないと絶縁性を示す膜が
得られない。以上のことから成膜後膜の酸化を行う場合
には基板温度を５００±２００℃、酸素分圧を１×１０
-4Ｔｏｒｒ以上で５分以上酸化を行う必要がある。Tables 1 and 2 summarize the conditions of the substrate temperature, the oxidation time, and the oxygen partial pressure in the film formation and the oxidation treatment performed this time. The oxidation time is the time for which the substrate temperature is maintained after the film formation is completed and does not include the cooling time. The oxygen partial pressure means an oxygen partial pressure when oxidation is performed after film formation. In addition, the dielectric property was measured as a standard for determining whether or not the film exhibits insulating properties, and the dielectric constant and tan δ were obtained. The results are also shown in Tables 1 and 2. When the substrate temperature is 200 ° C. or lower, the film does not crystallize, so that conduction occurs even if the oxygen partial pressure and the oxidation time are changed.
The dielectric constant could not be measured. On the other hand, when the substrate temperature was 800 ° C., cracks were generated on the film surface during oxidation, so that all of them were conducted. Also, 300 ° C, 70
Even at a substrate temperature of 0 ° C., an insulating film cannot be obtained unless the oxidation time is 5 minutes or more and the oxygen partial pressure is 1 × 10 −4 Torr or more. From the above, when oxidizing the film after film formation, the substrate temperature is 500 ± 200 ° C. and the oxygen partial pressure is 1 × 10 5.
It is necessary to oxidize at -4 Torr or more for 5 minutes or more.
【０００８】[0008]
【表１】 ──────────────────────────────────── 基板温度（℃） 酸化時間（分） 酸素分圧（Torr） 誘電率 ｔａｎδ ──────────────────────────────────── 3 5×10-5 測定不能 リーク大 1×10-4 測定不能 リーク大 1×10-3 測定不能 リーク大 ──────────────────────────── 5 5×10-5 測定不能 リーク大 200 1×10-4 測定不能 リーク大 1×10-3 測定不能 リーク大 ──────────────────────────── 10 5×10-5 測定不能 リーク大 1×10-4 測定不能 リーク大 1×10-3 測定不能 リーク大 ──────────────────────────────────── 3 5×10-5 測定不能 リーク大 1×10-4 測定不能 リーク大 1×10-3 測定不能 リーク大 ──────────────────────────── 5 5×10-5 測定不能 リーク大 300 1×10-4 200 0.023 1×10-3 210 0.011 ──────────────────────────── 10 5×10-5 測定不能 リーク大 1×10-4 190 0.011 1×10-3 200 0.009 ────────────────────────────────────[Table 1] ──────────────────────────────────── Substrate temperature (℃) Oxidation time (min) oxygen partial pressure (Torr) permittivity tanδ ──────────────────────────────────── 3 5 × 10 - 5 Unmeasurable large leak 1 × 10 -4 Unmeasurable large leak 1 × 10 -3 Unmeasurable large leak ──────────────────────────── ─ 5 5 × 10 -5 Unmeasurable leak large 200 1 × 10 -4 Unmeasurable leak large 1 × 10 -3 Unmeasurable leak large ────────────────────── ──────── 10 5 × 10 -5 Unmeasurable leak large 1 × 10 -4 Unmeasurable leak large 1 × 10 -3 Unmeasurable leak large ─────────────── ────────────────────── 3 5 × 10 -5 unmeasurable leak size 1 × 10 -4 unmeasurable leak size 1 × 10 -3 measurement Ability leak large ──────────────────────────── 5 5 × 10 -5 unmeasurable leak Large 300 1 × 10 -4 200 0.023 1 × 10 -3 210 0.011 ──────────────────────────── 10 5 × 10 -5 Unmeasurable large leak 1 × 10 -4 190 0.011 1 × 10 -3 200 0.009 ─────────────────────────────────────
【０００９】[0009]
【表２】 ──────────────────────────────────── 基板温度（℃） 酸化時間（分） 酸素分圧（Torr） 誘電率 ｔａｎδ ──────────────────────────────────── 3 5×10-5 測定不能 リーク大 1×10-4 測定不能 リーク大 1×10-3 測定不能 リーク大 ──────────────────────────── 5 5×10-5 測定不能 リーク大 700 1×10-4 210 0.008 1×10-3 200 0.008 ──────────────────────────── 10 5×10-5 測定不能 リーク大 1×10-4 220 0.007 1×10-3 200 0.007 ──────────────────────────────────── 3 5×10-5 測定不能 リーク大 1×10-4 測定不能 リーク大 1×10-3 測定不能 リーク大 ──────────────────────────── 5 5×10-5 測定不能 リーク大 880 1×10-4 測定不能 リーク大 1×10-3 測定不能 リーク大 ──────────────────────────── 10 5×10-5 測定不能 リーク大 1×10-4 測定不能 リーク大 1×10-3 測定不能 リーク大 ────────────────────────────────────[Table 2] ──────────────────────────────────── Substrate temperature (℃) Oxidation time (min) oxygen partial pressure (Torr) permittivity tanδ ──────────────────────────────────── 3 5 × 10 - 5 Unmeasurable large leak 1 × 10 -4 Unmeasurable large leak 1 × 10 -3 Unmeasurable large leak ──────────────────────────── ─ 5 5 × 10 -5 Unmeasurable large leak 700 1 × 10 -4 210 0.008 1 × 10 -3 200 0.008 ───────────────────────── ──── 10 5 × 10 -5 Unmeasurable Large leak 1 × 10 -4 220 0.007 1 × 10 -3 200 0.007 ──────────────────────── ────────────── 3 5 × 10 -5 Unmeasurable large leak 1 × 10 -4 Unmeasurable large leak 1 × 10 -3 Unmeasurable large leak ──────── ───── ────────────── 5 5 × 10 -5 unmeasurable leak Large 880 1 × 10 -4 unmeasurable leak size 1 × 10 -3 unmeasurable leak large ─────── ───────────────────── 10 5 × 10 -5 Unmeasurable leak large 1 × 10 -4 unmeasurable leak large 1 × 10 -3 unmeasurable large leak ─ ───────────────────────────────────
【００１０】図４に成膜後酸化を行う際にプラズマによ
り酸素ガスを活性化し酸化を行った場合（図４（ａ））
と、プラズマを用いなかった場合（図４（ｂ））につい
て電流電圧特性を測定し、耐圧分布の分布を調べた結果
を示す。測定は各々１００個の試料を用いて行った。試
料の膜厚は１００ｎｍ、基板温度は５００℃、酸素分圧
は１×１０-3Ｔｏｒｒ、酸化時間は１０分である。プラ
ズマを用いた場合は１５Ｖ付近に耐圧が集中しているの
に対し、用いなかった場合には６Ｖ付近に耐圧が集中し
ており、プラズマを用いて活性な酸素により酸化を行っ
た方が絶縁性を高めるうえで効果があることがわかる。
その他、ＰＬＺＴ、Ｂｉ4Ｔｉ3Ｏ12、ＬｉＮｂＯ3につ
いても同様に成膜を行い、同じ結果を得た。FIG. 4 shows a case where the oxygen gas is activated by plasma during the oxidation after the film formation and the oxidation is performed (FIG. 4A).
4 shows the results of measuring the current-voltage characteristics and examining the distribution of breakdown voltage when plasma was not used (FIG. 4B). The measurement was performed using 100 samples each. The film thickness of the sample is 100 nm, the substrate temperature is 500 ° C., the oxygen partial pressure is 1 × 10 −3 Torr, and the oxidation time is 10 minutes. When plasma is used, the breakdown voltage is concentrated near 15 V, whereas when it is not used, the breakdown voltage is concentrated around 6 V, and it is better to oxidize with active oxygen using plasma. It can be seen that it is effective in improving sex.
Other, PLZT, performs deposition Similarly, the Bi 4 Ti 3 O 12, LiNbO 3, the same results were obtained.
【００１１】[0011]
【発明の効果】以上説明したように、本発明の方法を用
いることにより、多元蒸着法によって原料が酸化しにく
い低い酸素分圧中で誘電体の成膜を行っても絶縁性を示
す膜を得ることが可能となる。この結果、組成制御を任
意に行うことができるといった多元蒸着法に期待されて
いる特徴を生かしながら誘電体の成膜を行うことが可能
となり、本発明の工業的意味はたいへん大きいと考えら
れる。As described above, by using the method of the present invention, it is possible to form a film that exhibits an insulating property even when the dielectric film is formed in a low oxygen partial pressure in which the raw material is hard to be oxidized by the multi-source deposition method. It becomes possible to obtain. As a result, it becomes possible to form a dielectric film while taking advantage of the features expected of the multi-source vapor deposition method such that composition control can be arbitrarily performed, and it is considered that the industrial significance of the present invention is extremely great.
【図１】本発明の方法に用いられる成膜装置の一例の構
成図である。FIG. 1 is a configuration diagram of an example of a film forming apparatus used in a method of the present invention.
【図２】Ｓｒの堆積速度の時間変化を示した図である。FIG. 2 is a diagram showing a change with time of a deposition rate of Sr.
【図３】２×１０-5Ｔｏｒｒの酸素圧中でＳｒの蒸発量
の変化に合わせてＴｉの蒸発量を変化させながら成膜し
た場合の組成分布図である。FIG. 3 is a composition distribution chart in the case of forming a film while changing the evaporation amount of Ti in accordance with the change of the evaporation amount of Sr in an oxygen pressure of 2 × 10 −5 Torr.
【図４】成膜後プラズマにより膜の酸化を行った場合
と、酸素ガスを用いて酸化を行った場合の耐圧分布を示
す図である。FIG. 4 is a diagram showing a withstand voltage distribution when a film is oxidized by plasma after film formation and when the film is oxidized by using oxygen gas.
１ 原料室 ２ 成長室 ３ 分子線セル ４ Ｅ−Ｇｕｎ ５ コイル ６ Ｏ2ガスパス ７ ヒータ ８ 基板1 Raw Material Chamber 2 Growth Chamber 3 Molecular Beam Cell 4 E-Gun 5 Coil 6 O 2 Gas Pass 7 Heater 8 Substrate
Claims (2)
Ｓｒ、Ｂａ、Ｐｂ、Ｌａ、Ｌｉ、Ｂｉから選ばれる一種
類以上の元素、ＢとしてＴｉ、Ｚｒ、Ｔａ、Ｎｂから選
ばれる一種類以上の元素からなる誘電体を多元蒸着法に
より成膜し、成膜後、膜の酸化を行うことよりなる誘電
体の成膜方法であって、５００±２００℃の基板温度、
２×１０-5Ｔｏｒｒ以下の酸素分圧中で誘電体膜を成膜
した後、５００±２００℃の基板温度、１×１０-4Ｔｏ
ｒｒ以上の酸素分圧中で５分間以上膜の酸化を行うこと
を特徴とする誘電体の成膜方法。1. A substrate is represented by ABO 3 and has one or more elements selected from Sr, Ba, Pb, La, Li and Bi as A and one selected from Ti, Zr, Ta and Nb as B. A dielectric film forming method comprising forming a dielectric film composed of elements of at least one kind by a multi-source vapor deposition method, and oxidizing the film after the film formation, wherein a substrate temperature of 500 ± 200 ° C.,
After forming a dielectric film in an oxygen partial pressure of 2 × 10 −5 Torr or less, a substrate temperature of 500 ± 200 ° C., 1 × 10 −4 To
A method for forming a dielectric film, comprising: oxidizing a film for 5 minutes or more in an oxygen partial pressure of rr or more.
膜の酸化を行うことを特徴とする請求項１記載の誘電体
の成膜方法。2. The method for forming a dielectric film according to claim 1, wherein oxygen gas is activated by plasma to oxidize the film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20111891A JPH0528866A (en) | 1991-07-17 | 1991-07-17 | Film forming method for dielectric substance film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20111891A JPH0528866A (en) | 1991-07-17 | 1991-07-17 | Film forming method for dielectric substance film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0528866A true JPH0528866A (en) | 1993-02-05 |
Family
ID=16435706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20111891A Pending JPH0528866A (en) | 1991-07-17 | 1991-07-17 | Film forming method for dielectric substance film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0528866A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100364752B1 (en) * | 1995-04-19 | 2003-08-02 | 엘지전자 주식회사 | Device for driving low frequency oscillation washing machine |
| JP2007066754A (en) * | 2005-08-31 | 2007-03-15 | Tdk Corp | Dielectric film and its manufacturing method |
| JP2011195348A (en) * | 2010-03-17 | 2011-10-06 | Yukio Watabe | Method for increasing polarization electric field of oxide ferroelectric |
-
1991
- 1991-07-17 JP JP20111891A patent/JPH0528866A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100364752B1 (en) * | 1995-04-19 | 2003-08-02 | 엘지전자 주식회사 | Device for driving low frequency oscillation washing machine |
| JP2007066754A (en) * | 2005-08-31 | 2007-03-15 | Tdk Corp | Dielectric film and its manufacturing method |
| JP2011195348A (en) * | 2010-03-17 | 2011-10-06 | Yukio Watabe | Method for increasing polarization electric field of oxide ferroelectric |
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