JPS647639A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS647639A JPS647639A JP62162563A JP16256387A JPS647639A JP S647639 A JPS647639 A JP S647639A JP 62162563 A JP62162563 A JP 62162563A JP 16256387 A JP16256387 A JP 16256387A JP S647639 A JPS647639 A JP S647639A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- onto
- plating
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Wire Bonding (AREA)
Abstract
PURPOSE:To decrease plating processes and shorten the plating time, and to prevent the generation of cracks in a passivation film by forming a metallic layer onto a current conductive layer, heating and melting a dummy electrode layer shaped onto the metallic layer and a bump plating layer and forming a bump electrode. CONSTITUTION:A passivation film 34 having an opening section where corresponding to an electrode pad 33 is formed onto a semiconductor substrate 31 to which a field oxide film 32 and an electrode pad 33 are shaped, and a current conductive layer 35 is formed onto the electrode pad 33 and the passivation film 34. A metallic layer 36 is shaped where corresponding to the electrode pad 33 on the current conductive layer 35 and a resist film 37 is formed around the layer 36, and a dummy electrode layer 38 is shaped onto the metallic layer 36 and a bump plating layer 39 is formed onto the layer 38, using the dummy electrode layer 38 as an electrode for plating. The resist film 37 is removed and the current conductive layer 35 exposed by getting rid of the resist film 37 is taken off, the dummy electrode layer 35 and the bump plating layer 39 are heated and melted, and a eutectic-alloyed bump electrode 40 having an approximately spherical surface-shaped outside surface is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62162563A JPS647639A (en) | 1987-06-30 | 1987-06-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62162563A JPS647639A (en) | 1987-06-30 | 1987-06-30 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS647639A true JPS647639A (en) | 1989-01-11 |
Family
ID=15756968
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62162563A Pending JPS647639A (en) | 1987-06-30 | 1987-06-30 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS647639A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6369490B1 (en) * | 1999-04-28 | 2002-04-09 | Murata Manufacturing Co., Ltd | Surface acoustic wave device having bump electrodes |
JP2008277677A (en) * | 2007-05-07 | 2008-11-13 | Sony Corp | Semiconductor chip, and manufacturing method thereof |
-
1987
- 1987-06-30 JP JP62162563A patent/JPS647639A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6369490B1 (en) * | 1999-04-28 | 2002-04-09 | Murata Manufacturing Co., Ltd | Surface acoustic wave device having bump electrodes |
JP2008277677A (en) * | 2007-05-07 | 2008-11-13 | Sony Corp | Semiconductor chip, and manufacturing method thereof |
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