JPS56109896A - Semiconductor single crystal and its growing method - Google Patents
Semiconductor single crystal and its growing methodInfo
- Publication number
- JPS56109896A JPS56109896A JP992880A JP992880A JPS56109896A JP S56109896 A JPS56109896 A JP S56109896A JP 992880 A JP992880 A JP 992880A JP 992880 A JP992880 A JP 992880A JP S56109896 A JPS56109896 A JP S56109896A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal
- semiconductor single
- growing
- several degrees
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To manufacture a semiconductor single crystal from which quite round wafers are obtd. easily by forming a seed crystal with a growing axis inclined from the direction of a lower index and growing a semiconductor single crystal in the form of a column using the seed crystal.
CONSTITUTION: When a semiconductor single crystal is grown, a seed crystal with a growing axis inclined by several degrees from the direction of a lower index such as <100> or <111> is formed. This seed crystal is set in a single crystal manufacturing apparatus, brought into contact with a molten semiconductor, and pulled up while rotating on growing axis 11 to grow columnar semiconductor single crystal 10. Crystal 10 and the seed crystal have the same crystal structure. Growing axis 11 inclines by several degrees from the direction of <100> or <111>, and a face perpendicular to axis 11 also inclines by several degrees from (100) or (111) face. As a result, quite round wafer 14 with a principal face inclined by several degrees from (100) or (111) face is obtd. easily by cutting.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP992880A JPS56109896A (en) | 1980-02-01 | 1980-02-01 | Semiconductor single crystal and its growing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP992880A JPS56109896A (en) | 1980-02-01 | 1980-02-01 | Semiconductor single crystal and its growing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56109896A true JPS56109896A (en) | 1981-08-31 |
Family
ID=11733724
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP992880A Pending JPS56109896A (en) | 1980-02-01 | 1980-02-01 | Semiconductor single crystal and its growing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56109896A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5717494A (en) * | 1980-06-30 | 1982-01-29 | Toshiba Corp | Manufacture of single crystal |
| JPS61242983A (en) * | 1985-04-17 | 1986-10-29 | Shin Etsu Handotai Co Ltd | Production of semiconductor single crystal rod |
| US7459720B2 (en) | 2000-07-10 | 2008-12-02 | Shin-Etsu Handotai Co., Ltd. | Single crystal wafer and solar battery cell |
| JP2018127652A (en) * | 2017-02-06 | 2018-08-16 | Ｊｘ金属株式会社 | Single crystal silicon sputtering target |
-
1980
- 1980-02-01 JP JP992880A patent/JPS56109896A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5717494A (en) * | 1980-06-30 | 1982-01-29 | Toshiba Corp | Manufacture of single crystal |
| JPH0419195B2 (en) * | 1980-06-30 | 1992-03-30 | Tokyo Shibaura Electric Co | |
| JPS61242983A (en) * | 1985-04-17 | 1986-10-29 | Shin Etsu Handotai Co Ltd | Production of semiconductor single crystal rod |
| US7459720B2 (en) | 2000-07-10 | 2008-12-02 | Shin-Etsu Handotai Co., Ltd. | Single crystal wafer and solar battery cell |
| JP2018127652A (en) * | 2017-02-06 | 2018-08-16 | Ｊｘ金属株式会社 | Single crystal silicon sputtering target |
| US10685820B2 (en) | 2017-02-06 | 2020-06-16 | Jx Nippon Mining & Metals Corporation | Monocrystalline silicon sputtering target |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5457498A (en) | Gallium phosphide single crystal of low defect density and production thereof | |
| JPS6432622A (en) | Formation of soi film | |
| JPS56109896A (en) | Semiconductor single crystal and its growing method | |
| JPS5272399A (en) | Method and apparatus for growth of single crystals of al2o3 from gas p hase | |
| JPS538374A (en) | Growing method for single crystal of semiconductor | |
| JPS5245273A (en) | Method for production of semiconductor device | |
| JPS534778A (en) | Crystal growth method with molecular beam | |
| JPS5717494A (en) | Manufacture of single crystal | |
| JPS5423467A (en) | Singlecrystal growing method for binary semiconductor | |
| JPS526093A (en) | Production method of semiconductor device | |
| JPS5543882A (en) | Gaseous-phase growing of compound semiconductor epitaxial film | |
| JPS54112789A (en) | Growing method for single crystal | |
| JPS52155189A (en) | Multiple layer crystal growth | |
| JPS51111057A (en) | Crystal growing device | |
| JPS53120263A (en) | Manufacture of semiconductor device | |
| JPS57166393A (en) | Preparation of single crystal | |
| JPS5257097A (en) | Method for fabrication of gallium arsenide having steep distribution o f impurity concentration | |
| JPS5250164A (en) | Process for production of semiconductor single crystal | |
| JPS53143163A (en) | Epitaxial growth method | |
| JPS5328374A (en) | Wafer production | |
| JPS538562A (en) | Growing method of perfect silicon single crystal | |
| JPS535957A (en) | Manufacture of semiconductor device | |
| JPS57115821A (en) | Manufacture of semiconductor device | |
| JPS53144474A (en) | Apparatus for producing crystal semiconductor | |
| JPS56149398A (en) | Growing method for crystal of compound semiconductor |