JPS6471187A - Light emitting diode array - Google Patents

Light emitting diode array

Info

Publication number
JPS6471187A
JPS6471187A JP22779287A JP22779287A JPS6471187A JP S6471187 A JPS6471187 A JP S6471187A JP 22779287 A JP22779287 A JP 22779287A JP 22779287 A JP22779287 A JP 22779287A JP S6471187 A JPS6471187 A JP S6471187A
Authority
JP
Japan
Prior art keywords
light emitting
end faces
diode array
emitting diode
dots
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22779287A
Other languages
Japanese (ja)
Inventor
Tomio Nakaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP22779287A priority Critical patent/JPS6471187A/en
Publication of JPS6471187A publication Critical patent/JPS6471187A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent unnecessary printing of points between dots and perform printing of good quality,by forming photoabsorption films at end faces of chips which compose a light emitting diode array. CONSTITUTION:A light emitting diode array 10 is composed so that a numbers light emitting dots 13 and 13' are placed in a straight line by arranging end faces 11a and 11'b of its chips 11 and 11' so as to face each other. The end faces 11a and 11'b of the adjacent light emitting diode array chips 11 and 11' are equipped with photoabsorption films 16. When the light emitting dots 13a and 13'b nearest to the end faces 11a and 11'b emit light, such light shifted by by light emitting dots 13a and 13'b are absorbed by the photoabsorption films 16 respectively even though light is sent to the end faces 11a and 11'b. Thus, unnecessary sensitization is not performed at any rate.
JP22779287A 1987-09-11 1987-09-11 Light emitting diode array Pending JPS6471187A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22779287A JPS6471187A (en) 1987-09-11 1987-09-11 Light emitting diode array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22779287A JPS6471187A (en) 1987-09-11 1987-09-11 Light emitting diode array

Publications (1)

Publication Number Publication Date
JPS6471187A true JPS6471187A (en) 1989-03-16

Family

ID=16866458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22779287A Pending JPS6471187A (en) 1987-09-11 1987-09-11 Light emitting diode array

Country Status (1)

Country Link
JP (1) JPS6471187A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5192985A (en) * 1991-01-16 1993-03-09 Kabushiki Kaisha Toshiba Semiconductor light-emitting element with light-shielding film
CN101904005A (en) * 2007-12-21 2010-12-01 欧司朗光电半导体有限公司 Optoelectronic component and production method for an optoelectronic component

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59138388A (en) * 1983-01-28 1984-08-08 Ricoh Co Ltd Manufacture of semiconductor light emitting element
JPS60253286A (en) * 1984-05-29 1985-12-13 Rohm Co Ltd Mesa etching isolation type monolithic display light-emitting diode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59138388A (en) * 1983-01-28 1984-08-08 Ricoh Co Ltd Manufacture of semiconductor light emitting element
JPS60253286A (en) * 1984-05-29 1985-12-13 Rohm Co Ltd Mesa etching isolation type monolithic display light-emitting diode

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5192985A (en) * 1991-01-16 1993-03-09 Kabushiki Kaisha Toshiba Semiconductor light-emitting element with light-shielding film
CN101904005A (en) * 2007-12-21 2010-12-01 欧司朗光电半导体有限公司 Optoelectronic component and production method for an optoelectronic component
US20100301355A1 (en) * 2007-12-21 2010-12-02 Walter Wegleiter Optoelectronic Component and Production Method for an Optoelectronic Component
JP2011507198A (en) * 2007-12-21 2011-03-03 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Optoelectronic component and manufacturing method thereof
US8513682B2 (en) 2007-12-21 2013-08-20 Osram Opto Semiconductors Gmbh Optoelectronic component and production method for an optoelectronic component
KR101523408B1 (en) * 2007-12-21 2015-05-27 오스람 옵토 세미컨덕터스 게엠베하 Optoelectronic component and production method for an optoelectronic component
EP2223337B1 (en) * 2007-12-21 2018-08-29 OSRAM Opto Semiconductors GmbH Optoelectronic component and production method for an optoelectronic component

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