JPS6442168A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6442168A JPS6442168A JP62198419A JP19841987A JPS6442168A JP S6442168 A JPS6442168 A JP S6442168A JP 62198419 A JP62198419 A JP 62198419A JP 19841987 A JP19841987 A JP 19841987A JP S6442168 A JPS6442168 A JP S6442168A
- Authority
- JP
- Japan
- Prior art keywords
- region
- impurity diffusion
- gate electrode
- impurity
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To read written data at high speed by forming an impurity diffusion of low resistance constructing a drain or source region by forming in a self- alignment manner a second conduction type impurity region using a field oxide film and a gate electrode as a mask. CONSTITUTION:A gate electrode and a gate wiring 12 are separately formed, and an impurity diffusion region which constructs a drain region 10 or a source region 11 is formed in a self-alignment manner using a gate electrode 9 and a fixed oxide film 7 as a mask. Hereby, an impurity is diffused simultaneously to the gate wiring 12 and an intersection of the impurity diffusion regions 10, 11 upon formation of the impurity diffusion region. Thus, resistance of the drain region being a signal extraction line is sharply reduced, assuring high speed read of written data.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62198419A JPS6442168A (en) | 1987-08-07 | 1987-08-07 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62198419A JPS6442168A (en) | 1987-08-07 | 1987-08-07 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6442168A true JPS6442168A (en) | 1989-02-14 |
Family
ID=16390796
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62198419A Pending JPS6442168A (en) | 1987-08-07 | 1987-08-07 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6442168A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2758418A1 (en) * | 1997-01-16 | 1998-07-17 | United Microelectronics Corp | SEMICONDUCTOR READ ONLY MEMORY DEVICE AND MANUFACTURING METHOD THEREOF |
FR2758653A1 (en) * | 1997-01-17 | 1998-07-24 | United Microelectronics Corp | SEMICONDUCTOR DEAD MEMORY AND MANUFACTURING METHOD |
-
1987
- 1987-08-07 JP JP62198419A patent/JPS6442168A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2758418A1 (en) * | 1997-01-16 | 1998-07-17 | United Microelectronics Corp | SEMICONDUCTOR READ ONLY MEMORY DEVICE AND MANUFACTURING METHOD THEREOF |
NL1006214C2 (en) * | 1997-01-16 | 1998-12-04 | United Microelectronics Corp | Semiconductor read-only memory device and method of manufacturing it. |
FR2758653A1 (en) * | 1997-01-17 | 1998-07-24 | United Microelectronics Corp | SEMICONDUCTOR DEAD MEMORY AND MANUFACTURING METHOD |
NL1006265C2 (en) * | 1997-01-17 | 1998-12-10 | United Microelectronics Corp | Semiconductor read-only memory device and method of manufacturing it. |
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