JPS6468924A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6468924A JPS6468924A JP62225687A JP22568787A JPS6468924A JP S6468924 A JPS6468924 A JP S6468924A JP 62225687 A JP62225687 A JP 62225687A JP 22568787 A JP22568787 A JP 22568787A JP S6468924 A JPS6468924 A JP S6468924A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- activating
- heat treating
- heat treatment
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain an excellent semiconductor device without contamination, by providing only a heat treating step at a temperature lower than that of a low temperature heat treating step after a thin film step other than a heat treating step at the same level as an activating step. CONSTITUTION:Only a heat treating step at a temperature lower than a low temperature heat treating step is provided after a window step and a thin film step, by which a thin film insulating film is formed on a contact window part 1, other than activating heat treatment and short-time heat treatment at the same level corresponding to the activating heat treatment. Thus the entire process is constituted. When impurities are activated, temperature of 900 deg.C or more is usually required. This temperature exceeds an annealing temperature. When the treating time is made to be 100 seconds or less, diffusion can be prevented. Other than such an activating step, there is a single crystallization step when, e.g., a three-dimensional IC is formed. Laser annealing and the like are used. When a point, where the laser is acting, is noted, the residence time is about 1 millisecond, which is very short, even if temperature of thousand and several hundred degrees, which is higher than the melting point of Si, is reached. This is the very short-time heat treatment at about the same level as the conditions of said activating step. There is no effect on diffusion.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62225687A JPS6468924A (en) | 1987-09-09 | 1987-09-09 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62225687A JPS6468924A (en) | 1987-09-09 | 1987-09-09 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6468924A true JPS6468924A (en) | 1989-03-15 |
Family
ID=16833218
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62225687A Pending JPS6468924A (en) | 1987-09-09 | 1987-09-09 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6468924A (en) |
-
1987
- 1987-09-09 JP JP62225687A patent/JPS6468924A/en active Pending
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