JPS6465885A - Manufacture of superconducting thin film - Google Patents
Manufacture of superconducting thin filmInfo
- Publication number
- JPS6465885A JPS6465885A JP62223378A JP22337887A JPS6465885A JP S6465885 A JPS6465885 A JP S6465885A JP 62223378 A JP62223378 A JP 62223378A JP 22337887 A JP22337887 A JP 22337887A JP S6465885 A JPS6465885 A JP S6465885A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- hcl
- single crystal
- thin film
- superconducting thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Chemical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To easily produce a superconducting thin film having a large area and one having an excellent response speed by growing a single crystal of magnesian spinel on an Si single crystal plate and depositing superconductive substances on the grown single crystal. CONSTITUTION:In an Al-HCl-MgCl2-CO2-H2 phase epitaxial growth equipment by CVD method, H2 gas and H2+HCl gas are introduced from gas introduction ports 1 and 2 respectively, then MgCl2 source gas 3 and AlCl3 source gas 4 which is generated by the reaction of Al and HCl are carried onto an Si substrate 5. Then the source gases and CO gas introduced through the gas introduction port 6 are reacted for epitaxial growth of magnesian spinel monocrystal on the Si substrate. Y-Ba-Cu-O superconductive film is deposited on the monocrystal by sputtering process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62223378A JPS6465885A (en) | 1987-09-07 | 1987-09-07 | Manufacture of superconducting thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62223378A JPS6465885A (en) | 1987-09-07 | 1987-09-07 | Manufacture of superconducting thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6465885A true JPS6465885A (en) | 1989-03-13 |
Family
ID=16797208
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62223378A Pending JPS6465885A (en) | 1987-09-07 | 1987-09-07 | Manufacture of superconducting thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6465885A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH029795A (en) * | 1988-03-06 | 1990-01-12 | Internatl Business Mach Corp <Ibm> | Method for producing a superconductive material |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6228446A (en) * | 1985-07-27 | 1987-02-06 | 株式会社豊田自動織機製作所 | Mistake yarn removing apparatus in jet loom |
JPS6246676B2 (en) * | 1978-08-03 | 1987-10-03 | Nippon Steel Corp |
-
1987
- 1987-09-07 JP JP62223378A patent/JPS6465885A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6246676B2 (en) * | 1978-08-03 | 1987-10-03 | Nippon Steel Corp | |
JPS6228446A (en) * | 1985-07-27 | 1987-02-06 | 株式会社豊田自動織機製作所 | Mistake yarn removing apparatus in jet loom |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH029795A (en) * | 1988-03-06 | 1990-01-12 | Internatl Business Mach Corp <Ibm> | Method for producing a superconductive material |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA1071068A (en) | Method of manufacturing single crystals by growth from the vapour phase | |
AU3994785A (en) | Method and apparatus for the gas jet deposition of conductingand dielectric thin solid films and products produced there by | |
CA2061504A1 (en) | Method of forming a single crystal material | |
WO1996037639A3 (en) | Method and apparatus using organic vapor phase deposition for the growth of organic thin films with large optical non-linearities | |
EP0216932A4 (en) | Rhombohedral polycrystalline boron nitride and process for its production. | |
GB1213867A (en) | Method of manufacturing silicon carbide single crystal filaments | |
SE9500326D0 (en) | Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD | |
EP0253611A3 (en) | Method of epitaxially growing gallium arsenide on silicon | |
Tsang | Chemical beam epitaxy of InGaAs | |
JPS6465885A (en) | Manufacture of superconducting thin film | |
JPH02185026A (en) | Selective forming method of al thin-film | |
EP0371901A3 (en) | Thick epitaxial films with abrupt junctions | |
WO1997002368A1 (en) | Process for the preparation of magnesium oxide films using organomagnesium compounds | |
JPS6430110A (en) | Superconductor | |
EP0349781A3 (en) | Metal organic vapor phase epitaxial growth of group iii-v compounds | |
JPS6451620A (en) | Vapor growth method | |
JPS56109899A (en) | Gaseous phase growing method for magnespinel | |
JPS5659697A (en) | Vapor phase epitaxial growing method for magnesia spinel | |
JPS5530848A (en) | Method of growing gas phase growth for compound semiconductor | |
JPS55149199A (en) | Vapor phase deposition method under reduced pressure | |
JPS6427222A (en) | Manufacture of thin single crystalline film | |
KR100254529B1 (en) | Preparation of aluminum nitride film on (111) substrate using an organoaluminum compound | |
JPS645034A (en) | Manufacture of semiconductor thin film | |
JPS57160993A (en) | Heteroepitaxial growing method | |
JPS5727999A (en) | Vapor phase growing method for gan |