JPH02185026A - Selective forming method of al thin-film - Google Patents
Selective forming method of al thin-filmInfo
- Publication number
- JPH02185026A JPH02185026A JP517789A JP517789A JPH02185026A JP H02185026 A JPH02185026 A JP H02185026A JP 517789 A JP517789 A JP 517789A JP 517789 A JP517789 A JP 517789A JP H02185026 A JPH02185026 A JP H02185026A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- gas
- film
- thin
- dimethylaluminum hydride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 title claims description 13
- 239000002994 raw material Substances 0.000 claims abstract description 17
- TUTOKIOKAWTABR-UHFFFAOYSA-N dimethylalumane Chemical compound C[AlH]C TUTOKIOKAWTABR-UHFFFAOYSA-N 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 abstract description 10
- 239000012159 carrier gas Substances 0.000 abstract description 8
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 239000010408 film Substances 0.000 abstract description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 4
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はシリコン基板上へのＡｌ薄膜の選択的形成方法
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for selectively forming an Al thin film on a silicon substrate.
ＡＩ！薄膜の選択的成長の応用としては、半導体の配線
形成において、従来のプロセスであるスパッタ法では不
可能であった微細なスルーホールの埋め込みによる配線
の高密度化や平坦化、更には多結晶シリコンへのＡＩの
張り付けによる配線抵抗の低減等がある。AI! Applications of selective growth of thin films include increasing the density and flattening of interconnects by burying minute through holes, which was impossible with the conventional process of sputtering, in semiconductor interconnect formation, and even polycrystalline silicon. There is a reduction in wiring resistance by attaching AI to the wire.
従来、ＡＪ？薄膜の選択的成長には、第１８回国体素子
材料コンファレンス予稿集（１９８６年）の７５５〜７
５６頁記載のように、トリイソブチルアルミ（（ｌ
Ｃ４Ｈ５）ｓ 、ＡＪ’）を原料として用いた方法が報
告されている。そこでは、酸化シリコンのパターンを形
成したシリコン基板上で、化学気相堆積（ＣＶＤ）法に
より、シリコンが露出したところにのみＡｆを堆積させ
るという選択的成膜を実現している。Traditionally, AJ? For the selective growth of thin films, see 755-7 of the 18th National Element Materials Conference Proceedings (1986).
As described on page 56, triisobutylaluminum ((l
A method using C4H5)s, AJ') as a raw material has been reported. In this method, selective film formation is achieved in which Af is deposited only on exposed areas of silicon by chemical vapor deposition (CVD) on a silicon substrate on which a silicon oxide pattern is formed.
しかしながら、従来のトリイソブチルアルミを用いたＡ
ｆ薄膜の選択的形成方法では、原料であるトリイソブチ
ルアルミの蒸気圧が２５℃で０．５７゜「「と低いため
、原料供給量を十分に取ることができず、成膜速度が、
現在半導体プロセスに使用されているスパッタ法より２
桁程度小さいという実用土の問題がある。又、原料ガス
を事前に気相分解しなければならないという問題もある
。However, conventional A using triisobutyl aluminum
In the f-thin film selective formation method, the vapor pressure of triisobutylaluminum, which is the raw material, is as low as 0.57° at 25°C, so it is not possible to obtain a sufficient amount of raw material supply, and the film formation rate is
2 from the sputtering method currently used in semiconductor processes.
There is a problem with practical soils, which are orders of magnitude smaller. Another problem is that the raw material gas must be subjected to gas phase decomposition in advance.
本発明は、開口部を有するマスク材料で被覆されたシリ
コン基板上の前記開口部分に化学気相堆積方法を用いて
選択成長を行うＡＩ！薄膜の選択的形成方法において、
ジメチルアルミハイドライド（（ＣＨ３）２ Ａ （！
Ｈ）を原料ガスとして用いるＡＪ７薄膜の選択的形成
方法である。The present invention provides AI! selective growth using a chemical vapor deposition method on a silicon substrate covered with a mask material having an opening. In a method for selectively forming a thin film,
Dimethyl aluminum hydride ((CH3)2 A (!
This is a method for selectively forming an AJ7 thin film using H) as a source gas.
本発明においては、原料ガスとして蒸気圧が２５℃で２
Ｔｏｒｒと高いジメチルアルミハイドライドを用いる
ことにより、選択成長が可能で、且つ原料の供給量を従
来のトリイソブチルアルミを用いるよりも１〜２桁増加
させることができる。この作用は、本発明者が新たに実
験的に見出した知見に基づいている。In the present invention, the raw material gas has a vapor pressure of 2 at 25°C.
By using dimethylaluminum hydride with a high Torr, selective growth is possible, and the amount of raw material supplied can be increased by one to two orders of magnitude compared to the conventional use of triisobutylaluminum. This effect is based on new experimental findings by the inventor.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例を示す図で、ＡＩ！薄膜の選
択的形成を実施するためのガスミキサ及び減圧ＣＶＤ装
置の構成図である。１はキャリアガスボンベ、２はキャ
リアガスの流量を調整するマスフローコントローラ、３
は原料をキャリアガスと混合するためのバブラ容器、４
はバブラ容器の蒸気圧を制御するための温度調整機、５
は成長室、６はウェハ、７はウェハの温度を制御するヒ
ータ、８は排気系である。FIG. 1 is a diagram showing an embodiment of the present invention. FIG. 2 is a configuration diagram of a gas mixer and a low pressure CVD apparatus for selectively forming a thin film. 1 is a carrier gas cylinder; 2 is a mass flow controller that adjusts the flow rate of the carrier gas; 3
is a bubbler container for mixing raw materials with carrier gas, 4
5 is a temperature regulator for controlling the vapor pressure of the bubbler container;
6 is a growth chamber, 6 is a wafer, 7 is a heater for controlling the temperature of the wafer, and 8 is an exhaust system.
バブラ容器３にジメチルアルミハイドライドを封入し、
水素ガスあるいは希ガスのキャリアガスの流量をマスフ
ローコントローラ２で制御しながらフローさせ、バブラ
容器３で原料の蒸気圧成分を分圧比で混合し、排気系８
にて減圧された成長室５へ導入する。Fill the bubbler container 3 with dimethyl aluminum hydride,
The flow rate of a carrier gas such as hydrogen gas or rare gas is controlled by a mass flow controller 2, and the vapor pressure components of the raw materials are mixed at a partial pressure ratio in a bubbler container 3.
The sample is introduced into the growth chamber 5, which is depressurized at .
このとき成長室５内の圧力はＩ Ｔｏｒｒ、キャリアガ
スは水素でマスフローコントローラ２で６０ＳＣＣＭ（
０℃、１気圧換算でのｃｍ３７ｗｉｎ ）に制御し、バ
ブラ容器３の温度は温度調整機４で２５℃に保たれてい
る。このとき、成長室５内の原料ガスの分圧はＱ、ｌ
Ｔｏｒｒと見積られた。成長室５の中に設置されたウェ
ハ６は、ヒータ７により選択性を示す温度に保たれてい
る。ここで、２２０〜２５０℃の温度範囲であれば、十
分に選択性を示すことを確認した。導入された原料は、
ウェハ６で加熱され熱分解によりＡｌを堆積させる。At this time, the pressure inside the growth chamber 5 is I Torr, the carrier gas is hydrogen, and the mass flow controller 2 is operated at 60 SCCM (
The temperature of the bubbler container 3 is maintained at 25°C by a temperature regulator 4. At this time, the partial pressure of the source gas in the growth chamber 5 is Q, l
It was estimated to be Torr. A wafer 6 placed in the growth chamber 5 is maintained at a temperature that exhibits selectivity by a heater 7. Here, it was confirmed that sufficient selectivity was exhibited within the temperature range of 220 to 250°C. The raw materials introduced are
The wafer 6 is heated to deposit Al by thermal decomposition.
ウェハにてＡＪ７薄膜が１μｇ＋／＋ｕｎの成膜速度が
得られる条件で、シリコン上に酸化シリコンのマスクパ
ターンが形成されたウェハを用いたところ、マスクパタ
ーンの開口部から露出したシリコン上にのみ選択性良く
Ａｌが堆積した。ここではマスク材料として酸化シリコ
ンを用いたが、ＳｉＮｘやＰＳＧなとの他の材料を用い
ても本発明の効果は得られる。When a wafer with a silicon oxide mask pattern formed on the silicon was used under the conditions that the AJ7 thin film was deposited at a deposition rate of 1 μg +/+ un on the wafer, the film was selected only on the silicon exposed through the opening of the mask pattern. Al was deposited with good quality. Although silicon oxide is used here as the mask material, the effects of the present invention can also be obtained using other materials such as SiNx and PSG.
本発明によれば、原料供給量が十分なため、従来よりも
大きな成膜速度で選択的にＡｌ薄膜を形成することがで
きる。又、原料を事前に分解する必要もなくなる。According to the present invention, since the amount of raw material supplied is sufficient, it is possible to selectively form an Al thin film at a faster film formation rate than in the past. Also, there is no need to decompose the raw material in advance.
第１図は本発明の一実施例を説明するための装置の構成
図である。FIG. 1 is a configuration diagram of an apparatus for explaining one embodiment of the present invention.
１・・・キャリアガスボンベ、 ２・・・マスフローコ
ントローラ、 ３・・・バブラ容器、 ４・・・温度調
整機、 ５・・・成長室、 ６・・・ウェハ、７・・・
ヒータ、８・・・排気系。DESCRIPTION OF SYMBOLS 1... Carrier gas cylinder, 2... Mass flow controller, 3... Bubbler container, 4... Temperature regulator, 5... Growth chamber, 6... Wafer, 7...
Heater, 8...exhaust system.
Claims (1)
の前記開口部分に化学気相堆積方法を用いて選択成長を
行うＡｌ薄膜の選択的形成方法において、ジメチルアル
ミハイドライド（（ＣＨ＿３）＿２ＡｌＨ）を原料ガス
として用いることを特徴とするＡｌ薄膜の選択的形成方
法。In a method for selectively forming an Al thin film in which selective growth is performed using a chemical vapor deposition method on a silicon substrate covered with a mask material having an opening, dimethyl aluminum hydride ((CH_3)_2AlH) is used as a raw material. A method for selectively forming an Al thin film, characterized in that it is used as a gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP517789A JPH02185026A (en) | 1989-01-11 | 1989-01-11 | Selective forming method of al thin-film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP517789A JPH02185026A (en) | 1989-01-11 | 1989-01-11 | Selective forming method of al thin-film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02185026A true JPH02185026A (en) | 1990-07-19 |
Family
ID=11603954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP517789A Pending JPH02185026A (en) | 1989-01-11 | 1989-01-11 | Selective forming method of al thin-film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02185026A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5091210A (en) * | 1989-09-26 | 1992-02-25 | Canon Kabushiki Kaisha | Plasma CVD of aluminum films |
| US5154949A (en) * | 1989-09-26 | 1992-10-13 | Canon Kabushiki Kaisha | Process for forming metal deposited film containing aluminum as main component by use of alkyl aluminum hydride |
| US5179042A (en) * | 1989-09-09 | 1993-01-12 | Canon Kabushiki Kaisha | Process for forming deposited film by use of alkyl aluminum hydride |
| US5180687A (en) * | 1989-09-26 | 1993-01-19 | Canon Kabushiki Kaisha | Deposited film formation method utilizing selective deposition by use of alkyl aluminum hydride |
| US5196372A (en) * | 1989-09-09 | 1993-03-23 | Canon Kabushiki Kaisha | Process for forming metal deposited film containing aluminum as main component by use of alkyl hydride |
| US5316972A (en) * | 1989-09-26 | 1994-05-31 | Canon Kabushiki Kaisha | Process for forming deposited film by use of alkyl aluminum hydride and process for preparing semiconductor device |
| US5476547A (en) * | 1989-09-26 | 1995-12-19 | Canon Kabushiki Kaisha | Gas feeding device for controlled vaporization of an organometallic compound used in deposition film formation |
| US5665630A (en) * | 1990-05-31 | 1997-09-09 | Canon Kabushiki Kaisha | Device separation structure and semiconductor device improved in wiring structure |
| US6218223B1 (en) * | 1990-05-31 | 2001-04-17 | Canon Kabushiki Kaisha | Process for producing electrode for semiconductor element and semiconductor device having the electrode |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6333569A (en) * | 1986-07-25 | 1988-02-13 | Nippon Telegr & Teleph Corp <Ntt> | Production of thin metallic film |
| JPH0238569A (en) * | 1988-07-28 | 1990-02-07 | Anelva Corp | Formation of smooth thin aluminum film on silicon substrate and resulting optical reflecting mirror |
-
1989
- 1989-01-11 JP JP517789A patent/JPH02185026A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6333569A (en) * | 1986-07-25 | 1988-02-13 | Nippon Telegr & Teleph Corp <Ntt> | Production of thin metallic film |
| JPH0238569A (en) * | 1988-07-28 | 1990-02-07 | Anelva Corp | Formation of smooth thin aluminum film on silicon substrate and resulting optical reflecting mirror |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5179042A (en) * | 1989-09-09 | 1993-01-12 | Canon Kabushiki Kaisha | Process for forming deposited film by use of alkyl aluminum hydride |
| US5196372A (en) * | 1989-09-09 | 1993-03-23 | Canon Kabushiki Kaisha | Process for forming metal deposited film containing aluminum as main component by use of alkyl hydride |
| US5328873A (en) * | 1989-09-09 | 1994-07-12 | Canon Kubushiki Kaisha | Process for forming deposited film by use of alkyl aluminum hydride |
| US5091210A (en) * | 1989-09-26 | 1992-02-25 | Canon Kabushiki Kaisha | Plasma CVD of aluminum films |
| US5154949A (en) * | 1989-09-26 | 1992-10-13 | Canon Kabushiki Kaisha | Process for forming metal deposited film containing aluminum as main component by use of alkyl aluminum hydride |
| US5180687A (en) * | 1989-09-26 | 1993-01-19 | Canon Kabushiki Kaisha | Deposited film formation method utilizing selective deposition by use of alkyl aluminum hydride |
| US5316972A (en) * | 1989-09-26 | 1994-05-31 | Canon Kabushiki Kaisha | Process for forming deposited film by use of alkyl aluminum hydride and process for preparing semiconductor device |
| US5393699A (en) * | 1989-09-26 | 1995-02-28 | Canon Kabushiki Kaisha | Deposited film formation method utilizing selective deposition by use of alkyl aluminum hydride |
| US5476547A (en) * | 1989-09-26 | 1995-12-19 | Canon Kabushiki Kaisha | Gas feeding device for controlled vaporization of an organometallic compound used in deposition film formation |
| US5665630A (en) * | 1990-05-31 | 1997-09-09 | Canon Kabushiki Kaisha | Device separation structure and semiconductor device improved in wiring structure |
| US6218223B1 (en) * | 1990-05-31 | 2001-04-17 | Canon Kabushiki Kaisha | Process for producing electrode for semiconductor element and semiconductor device having the electrode |
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