JPS6463904A - Production of glass waveguide - Google Patents

Production of glass waveguide

Info

Publication number
JPS6463904A
JPS6463904A JP62220910A JP22091087A JPS6463904A JP S6463904 A JPS6463904 A JP S6463904A JP 62220910 A JP62220910 A JP 62220910A JP 22091087 A JP22091087 A JP 22091087A JP S6463904 A JPS6463904 A JP S6463904A
Authority
JP
Japan
Prior art keywords
layer
substrate
glass layer
glass
atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62220910A
Other languages
Japanese (ja)
Inventor
Takao Shioda
Hiromi Hidaka
Koichi Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikura Ltd
Original Assignee
Fujikura Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikura Ltd filed Critical Fujikura Ltd
Priority to JP62220910A priority Critical patent/JPS6463904A/en
Publication of JPS6463904A publication Critical patent/JPS6463904A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent generation of loss in a waveguide by forming a layer of glass comprising SiO2 and TiO2 on a substrate and heating the layer with beams in inert gas atmosphere after treating the glass layer in H2-contg. atmosphere. CONSTITUTION:A glass layer 2 comprising SiO2 and TiO2 is formed on a substrate 1 by sputtering or chemical vapor deposition. Then, the glass layer 2 is beam-heated in inert gas atmosphere successively after treating the layer 2 in H2-contg. atmosphere. Thus, a glass layer 2 is formed directly on the substrate in place of a layer of oxide. By this method, generation of cracks in the substrate 1 or the glass layer 2 due to difference of coeffts. of expansion between the substrate 1 and the glass layer 2 during cooling can be prevented since occurrence of stoichiometric difference is avoided and local heating is possible.
JP62220910A 1987-09-03 1987-09-03 Production of glass waveguide Pending JPS6463904A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62220910A JPS6463904A (en) 1987-09-03 1987-09-03 Production of glass waveguide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62220910A JPS6463904A (en) 1987-09-03 1987-09-03 Production of glass waveguide

Publications (1)

Publication Number Publication Date
JPS6463904A true JPS6463904A (en) 1989-03-09

Family

ID=16758449

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62220910A Pending JPS6463904A (en) 1987-09-03 1987-09-03 Production of glass waveguide

Country Status (1)

Country Link
JP (1) JPS6463904A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0967008A2 (en) * 1998-06-24 1999-12-29 Agency Of Industrial Science And Technology Film of titanium dioxide containing silicon dioxide and a method of forming the same
GB2370043A (en) * 2000-12-12 2002-06-19 Mitel Corp Chemical treatment of silica films

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0967008A2 (en) * 1998-06-24 1999-12-29 Agency Of Industrial Science And Technology Film of titanium dioxide containing silicon dioxide and a method of forming the same
EP0967008A3 (en) * 1998-06-24 2000-07-19 Agency Of Industrial Science And Technology Film of titanium dioxide containing silicon dioxide and a method of forming the same
GB2370043A (en) * 2000-12-12 2002-06-19 Mitel Corp Chemical treatment of silica films

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