JPS646349A - Laser plasma x-ray generator and x-ray ejection port opening/closing mechanism - Google Patents

Laser plasma x-ray generator and x-ray ejection port opening/closing mechanism

Info

Publication number
JPS646349A
JPS646349A JP62226699A JP22669987A JPS646349A JP S646349 A JPS646349 A JP S646349A JP 62226699 A JP62226699 A JP 62226699A JP 22669987 A JP22669987 A JP 22669987A JP S646349 A JPS646349 A JP S646349A
Authority
JP
Japan
Prior art keywords
target material
laser light
ray
chamber
transfer device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62226699A
Other languages
Japanese (ja)
Other versions
JP2614457B2 (en
Inventor
Takayasu Mochizuki
Chiyoe Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP62226699A priority Critical patent/JP2614457B2/en
Publication of JPS646349A publication Critical patent/JPS646349A/en
Application granted granted Critical
Publication of JP2614457B2 publication Critical patent/JP2614457B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lasers (AREA)

Abstract

PURPOSE:To allow the continuous use of an X-ray generator for a long time by arranging a target material transfer device in a chamber, feeding a target material to the transfer device from the outside of the chamber, and continuously feeding the new target material to a laser light collecting point. CONSTITUTION:A target material 15 made of a liquid or solid inert element is fed to a target material transfer device 14 in a chamber 10 by a target material feeding device 20, and the target material is continuously fed to the light collecting point 18 of the pulse laser light 13a by the transfer device 14. The pulse laser light emitted from a laser light source 13 is sent to the light collecting point via a light collecting mechanism, the target material 15 heated by the pulse laser light is converted into plasma, and X-rays are emitted from the target material 15. The emitted X-rays are ejected to the outside of the chamber 10 through the opening when an X-ray ejection port opening/closing mechanism 21 is opened. The stable and continuous radiation of X-rays is thereby allowed without replacing a target rotor with a high frequency.
JP62226699A 1986-09-11 1987-09-11 Laser plasma X-ray generator and X-ray exit opening / closing mechanism Expired - Fee Related JP2614457B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62226699A JP2614457B2 (en) 1986-09-11 1987-09-11 Laser plasma X-ray generator and X-ray exit opening / closing mechanism

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61-214734 1986-09-11
JP21473486 1986-09-11
JP62226699A JP2614457B2 (en) 1986-09-11 1987-09-11 Laser plasma X-ray generator and X-ray exit opening / closing mechanism

Publications (2)

Publication Number Publication Date
JPS646349A true JPS646349A (en) 1989-01-10
JP2614457B2 JP2614457B2 (en) 1997-05-28

Family

ID=26520474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62226699A Expired - Fee Related JP2614457B2 (en) 1986-09-11 1987-09-11 Laser plasma X-ray generator and X-ray exit opening / closing mechanism

Country Status (1)

Country Link
JP (1) JP2614457B2 (en)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05258692A (en) * 1992-03-10 1993-10-08 Nikon Corp X-ray generating method and x-ray generating device
JPH05290993A (en) * 1992-04-13 1993-11-05 Nikon Corp Laser plasma x-ray source
JPH06223996A (en) * 1991-03-25 1994-08-12 Agency Of Ind Science & Technol X-ray generation source
JPH06283407A (en) * 1993-03-26 1994-10-07 Nikon Corp X-ray source for laser plasma
JPH07253499A (en) * 1994-03-15 1995-10-03 Nikon Corp X-ray generator
JPH0837095A (en) * 1994-07-26 1996-02-06 Nikon Corp X-ray generating device
JPH09320792A (en) * 1996-05-27 1997-12-12 Nikon Corp X-ray generator
JPH10221499A (en) * 1997-02-07 1998-08-21 Hitachi Ltd Laser plasma x-ray source and device and method for exposing semiconductor using the same
WO2000019496A1 (en) * 1998-09-28 2000-04-06 Hitachi, Ltd. Laser plasma x-ray generator, semiconductor aligner having the generator, and semiconductor exposure method
JP2000509190A (en) * 1996-04-25 2000-07-18 ジェテック、アクチボラグ Method and apparatus for generating X-ray or extreme ultraviolet radiation
JP2001068297A (en) * 1999-08-30 2001-03-16 Masaki Yamamoto Debris removing mechanism for soft x-ray using device
JP2001357997A (en) * 2000-06-13 2001-12-26 Teikoku Electric Mfg Co Ltd Laser plasma x-ray generating device
JP2003318107A (en) * 2002-03-28 2003-11-07 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US6888921B2 (en) 2002-07-04 2005-05-03 Teikoku Electric Mfg. Co., Ltd. Laser plasma X-ray generating apparatus
JP2005197081A (en) * 2004-01-07 2005-07-21 Komatsu Ltd Light source device and exposure device using it
JP2006221946A (en) * 2005-02-10 2006-08-24 Horon:Kk Electron microscope
JP2007502000A (en) * 2003-08-12 2007-02-01 イェーノプティーク ミクロテヒニーク ゲゼルシャフト ミット ベシュレンクテル ハフツング Plasma radiation source and apparatus for forming a gas curtain for a plasma radiation source
JP2007505460A (en) * 2003-09-11 2007-03-08 コニンクリユケ フィリップス エレクトロニクス エヌ．ブイ． Method and apparatus for generating extreme ultraviolet radiation or soft x-ray radiation
JP2008294393A (en) * 2007-04-27 2008-12-04 Komatsu Ltd Target supply device in euv light generator
JP2010106958A (en) * 2008-10-30 2010-05-13 Nippon Pillar Packing Co Ltd Gasket
JP2011515810A (en) * 2008-03-21 2011-05-19 エーエスエムエル ネザーランズ ビー．ブイ． Target material, radiation source, EUV lithography apparatus and device manufacturing method using them
JP2016531316A (en) * 2013-07-22 2016-10-06 ケーエルエー−テンカー コーポレイション System and method for generation of extreme ultraviolet light

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55173900U (en) * 1979-05-31 1980-12-13
JPS60133644A (en) * 1983-12-21 1985-07-16 Hitachi Ltd Plasma x-ray generator
JPS61153935A (en) * 1984-12-26 1986-07-12 Toshiba Corp Plasma x-ray generator

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55173900U (en) * 1979-05-31 1980-12-13
JPS60133644A (en) * 1983-12-21 1985-07-16 Hitachi Ltd Plasma x-ray generator
JPS61153935A (en) * 1984-12-26 1986-07-12 Toshiba Corp Plasma x-ray generator

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06223996A (en) * 1991-03-25 1994-08-12 Agency Of Ind Science & Technol X-ray generation source
JPH05258692A (en) * 1992-03-10 1993-10-08 Nikon Corp X-ray generating method and x-ray generating device
JPH05290993A (en) * 1992-04-13 1993-11-05 Nikon Corp Laser plasma x-ray source
JPH06283407A (en) * 1993-03-26 1994-10-07 Nikon Corp X-ray source for laser plasma
JPH07253499A (en) * 1994-03-15 1995-10-03 Nikon Corp X-ray generator
JPH0837095A (en) * 1994-07-26 1996-02-06 Nikon Corp X-ray generating device
JP2000509190A (en) * 1996-04-25 2000-07-18 ジェテック、アクチボラグ Method and apparatus for generating X-ray or extreme ultraviolet radiation
JPH09320792A (en) * 1996-05-27 1997-12-12 Nikon Corp X-ray generator
JPH10221499A (en) * 1997-02-07 1998-08-21 Hitachi Ltd Laser plasma x-ray source and device and method for exposing semiconductor using the same
WO2000019496A1 (en) * 1998-09-28 2000-04-06 Hitachi, Ltd. Laser plasma x-ray generator, semiconductor aligner having the generator, and semiconductor exposure method
JP2001068297A (en) * 1999-08-30 2001-03-16 Masaki Yamamoto Debris removing mechanism for soft x-ray using device
JP2001357997A (en) * 2000-06-13 2001-12-26 Teikoku Electric Mfg Co Ltd Laser plasma x-ray generating device
JP2003318107A (en) * 2002-03-28 2003-11-07 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US6888921B2 (en) 2002-07-04 2005-05-03 Teikoku Electric Mfg. Co., Ltd. Laser plasma X-ray generating apparatus
JP2007502000A (en) * 2003-08-12 2007-02-01 イェーノプティーク ミクロテヒニーク ゲゼルシャフト ミット ベシュレンクテル ハフツング Plasma radiation source and apparatus for forming a gas curtain for a plasma radiation source
JP4766695B2 (en) * 2003-08-12 2011-09-07 イクストリーメ テクノロジース ゲゼルシャフト ミット ベシュレンクテル ハフツング Plasma radiation source, apparatus for generating gas curtain and gas jet vacuum pump
JP2007505460A (en) * 2003-09-11 2007-03-08 コニンクリユケ フィリップス エレクトロニクス エヌ．ブイ． Method and apparatus for generating extreme ultraviolet radiation or soft x-ray radiation
JP2005197081A (en) * 2004-01-07 2005-07-21 Komatsu Ltd Light source device and exposure device using it
JP2006221946A (en) * 2005-02-10 2006-08-24 Horon:Kk Electron microscope
JP2008294393A (en) * 2007-04-27 2008-12-04 Komatsu Ltd Target supply device in euv light generator
JP2011515810A (en) * 2008-03-21 2011-05-19 エーエスエムエル ネザーランズ ビー．ブイ． Target material, radiation source, EUV lithography apparatus and device manufacturing method using them
JP2010106958A (en) * 2008-10-30 2010-05-13 Nippon Pillar Packing Co Ltd Gasket
JP2016531316A (en) * 2013-07-22 2016-10-06 ケーエルエー−テンカー コーポレイション System and method for generation of extreme ultraviolet light
JP2020077007A (en) * 2013-07-22 2020-05-21 ケーエルエー コーポレイション Device for generating extreme ultraviolet light

Also Published As

Publication number Publication date
JP2614457B2 (en) 1997-05-28

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees