JPS5529115A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5529115A JPS5529115A JP10179078A JP10179078A JPS5529115A JP S5529115 A JPS5529115 A JP S5529115A JP 10179078 A JP10179078 A JP 10179078A JP 10179078 A JP10179078 A JP 10179078A JP S5529115 A JPS5529115 A JP S5529115A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- diffusion
- fet
- psg
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To lessen the variation of the threshold and offset voltage of FET's through the process consisting of oxidizing the gate of said FET's after removing the PSG and P-diffusion layer formed on the diffusion of the emitter of a dipolar transistor and making a given mode of P-treatment.
CONSTITUTION: The n-type buried layer 5, n-epitaxial layer 4 and separated layer 13 are made in and on a p-type substrate 6. Next, the base 9 of an npn dipolar element, and the source 7, drain 8 and emitter 2 of an FET are made. The PSG layer 1 and p-diffusion layer 10 formed at this time are completely removed through etching. Next, the 10∼100Å PSG layer is formed at 700∼900°C after gate oxidation. The flow of P is selected so that the concentration of P may become 1∼10 mol%, and diffusion is made at 1,000°C for a short period of time after deposition. Thereafter, selective opening is made in the SiO2 film on the surface, and an Al electrode is attached. The dispersion of the threshold voltage and the variation of the offset voltage of this IC are small during both normal temperature and high temperature bias operations.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10179078A JPS5529115A (en) | 1978-08-23 | 1978-08-23 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10179078A JPS5529115A (en) | 1978-08-23 | 1978-08-23 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5529115A true JPS5529115A (en) | 1980-03-01 |
JPS639387B2 JPS639387B2 (en) | 1988-02-29 |
Family
ID=14309954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10179078A Granted JPS5529115A (en) | 1978-08-23 | 1978-08-23 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5529115A (en) |
-
1978
- 1978-08-23 JP JP10179078A patent/JPS5529115A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS639387B2 (en) | 1988-02-29 |
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