JPS6453453A - Heterojunction bipolar transistor - Google Patents

Heterojunction bipolar transistor

Info

Publication number
JPS6453453A
JPS6453453A JP63023941A JP2394188A JPS6453453A JP S6453453 A JPS6453453 A JP S6453453A JP 63023941 A JP63023941 A JP 63023941A JP 2394188 A JP2394188 A JP 2394188A JP S6453453 A JPS6453453 A JP S6453453A
Authority
JP
Japan
Prior art keywords
layer
collector
collector layer
gaas
make
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63023941A
Other languages
English (en)
Other versions
JPH0658918B2 (ja
Inventor
Tadao Ishibashi
Yoshinori Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of JPS6453453A publication Critical patent/JPS6453453A/ja
Publication of JPH0658918B2 publication Critical patent/JPH0658918B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
JP63023941A 1987-02-06 1988-02-05 ヘテロ接合バイポーラトランジスタ Expired - Lifetime JPH0658918B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2476187 1987-02-06
JP62-24761 1987-02-06
JP12574887 1987-05-25
JP62-125748 1987-05-25

Publications (2)

Publication Number Publication Date
JPS6453453A true JPS6453453A (en) 1989-03-01
JPH0658918B2 JPH0658918B2 (ja) 1994-08-03

Family

ID=26362340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63023941A Expired - Lifetime JPH0658918B2 (ja) 1987-02-06 1988-02-05 ヘテロ接合バイポーラトランジスタ

Country Status (5)

Country Link
US (1) US5019890A (ja)
EP (1) EP0278386B1 (ja)
JP (1) JPH0658918B2 (ja)
CA (1) CA1299771C (ja)
DE (1) DE3860836D1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5336909A (en) * 1991-08-16 1994-08-09 Kabushiki Kaisha Toshiba Bipolar transistor with an improved collector structure
US5609658A (en) * 1994-07-13 1997-03-11 Honda Giken Kogyo Kabushiki Kaisha Air cleaner for a vehicle
KR100277555B1 (ko) * 1991-06-28 2001-02-01 윌리엄 비. 켐플러 바이폴라 트랜지스터용 다층 콜렉터 구조물 및 그 제조 방법
JP2015534262A (ja) * 2012-08-28 2015-11-26 アドバンスト・エナジー・インダストリーズ・インコーポレイテッドＡｄｖａｎｃｅｄ Ｅｎｅｒｇｙ Ｉｎｄｕｓｔｒｉｅｓ， Ｉｎｃ． ３端子ｐｉｎダイオード

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5150185A (en) * 1990-04-18 1992-09-22 Fujitsu Limited Semiconductor device
US5150186A (en) * 1991-03-06 1992-09-22 Micron Technology, Inc. CMOS output pull-up driver
US5270223A (en) * 1991-06-28 1993-12-14 Texas Instruments Incorporated Multiple layer wide bandgap collector structure for bipolar transistors
EP0520482A3 (en) * 1991-06-28 1994-06-22 Texas Instruments Inc Multiple layer collector structure for bipolar transistors
US5298438A (en) * 1992-08-31 1994-03-29 Texas Instruments Incorporated Method of reducing extrinsic base-collector capacitance in bipolar transistors
JPH0815214B2 (ja) * 1993-03-12 1996-02-14 日本電気株式会社 量子細線構造
JP3292894B2 (ja) * 1993-05-12 2002-06-17 日本電信電話株式会社 集積化受光回路
US5631477A (en) * 1995-06-02 1997-05-20 Trw Inc. Quaternary collector InAlAs-InGaAlAs heterojunction bipolar transistor
CN112071904B (zh) * 2020-08-11 2024-01-30 陕西炬脉瑞丰科技有限公司 一种高压雪崩晶体管

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59211267A (ja) * 1983-05-17 1984-11-30 Toshiba Corp ヘテロ接合バイポ−ラトランジスタ
US4672413A (en) * 1984-04-16 1987-06-09 Trw Inc. Barrier emitter transistor
DE3682959D1 (de) * 1985-06-21 1992-01-30 Matsushita Electric Ind Co Ltd Bipolarer transistor mit heterouebergang und verfahren zu seiner herstellung.
JPH07107902B2 (ja) * 1985-07-10 1995-11-15 富士通株式会社 半導体装置
JPH0656851B2 (ja) * 1985-08-07 1994-07-27 日本電気株式会社 半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100277555B1 (ko) * 1991-06-28 2001-02-01 윌리엄 비. 켐플러 바이폴라 트랜지스터용 다층 콜렉터 구조물 및 그 제조 방법
US5336909A (en) * 1991-08-16 1994-08-09 Kabushiki Kaisha Toshiba Bipolar transistor with an improved collector structure
US5609658A (en) * 1994-07-13 1997-03-11 Honda Giken Kogyo Kabushiki Kaisha Air cleaner for a vehicle
JP2015534262A (ja) * 2012-08-28 2015-11-26 アドバンスト・エナジー・インダストリーズ・インコーポレイテッドＡｄｖａｎｃｅｄ Ｅｎｅｒｇｙ Ｉｎｄｕｓｔｒｉｅｓ， Ｉｎｃ． ３端子ｐｉｎダイオード

Also Published As

Publication number Publication date
JPH0658918B2 (ja) 1994-08-03
EP0278386A3 (en) 1989-05-03
DE3860836D1 (de) 1990-11-29
EP0278386B1 (en) 1990-10-24
CA1299771C (en) 1992-04-28
EP0278386A2 (en) 1988-08-17
US5019890A (en) 1991-05-28

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