JPS6482563A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6482563A
JPS6482563A JP62241827A JP24182787A JPS6482563A JP S6482563 A JPS6482563 A JP S6482563A JP 62241827 A JP62241827 A JP 62241827A JP 24182787 A JP24182787 A JP 24182787A JP S6482563 A JPS6482563 A JP S6482563A
Authority
JP
Japan
Prior art keywords
region
type
type region
electric field
internal electric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62241827A
Other languages
Japanese (ja)
Inventor
Hisao Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62241827A priority Critical patent/JPS6482563A/en
Publication of JPS6482563A publication Critical patent/JPS6482563A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To shorten turn-off time wherein an internal electric field generates in a second region, and the effective diffusion constant of carrier in the second region is controlled, by making the impurity distribution in the second region have a gradient in the direction vertical to the main surface. CONSTITUTION:The concentration distribution of N-type impurity in a first N-type region 2 is minimum on the boundary surface between a first P-type region 1 and the region 2, increases in accordance with the approach to a second N-type region 3, and becomes medium on the boundary between the second N-type region 3 and the region 2. Since the concentration distribution of N-type impurity is made to have a gradient, an internal electric field generates in the first N-type region 2, and the direction of the field is inverse to the gradient of the N-type impurity concentration distribution. That is, the internal electric field acts so as to block the diffusion of positive hole which is injected from the first P-type region 1 and diffuses into the second N-type region 3. Therefore, the diffusion constant of positive hole and the base transit time are controlled by the internal electric field, and the turn-off time of IGBT is shorten.
JP62241827A 1987-09-24 1987-09-24 Semiconductor device Pending JPS6482563A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62241827A JPS6482563A (en) 1987-09-24 1987-09-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62241827A JPS6482563A (en) 1987-09-24 1987-09-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6482563A true JPS6482563A (en) 1989-03-28

Family

ID=17080084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62241827A Pending JPS6482563A (en) 1987-09-24 1987-09-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6482563A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02206174A (en) * 1989-02-06 1990-08-15 Fuji Electric Co Ltd P-channel insulated-gate bipolar transistor
JPH02304983A (en) * 1989-05-19 1990-12-18 Fuji Electric Co Ltd P-channel insulated gate type bipolar transistor
US5161809A (en) * 1990-07-16 1992-11-10 Nippon Leakless Industry Co., Ltd. Metal gasket
EP0725446A1 (en) * 1995-02-02 1996-08-07 Motorola, Inc. Insulated gate bipolar semiconductor device and method therefor
US6384431B1 (en) 1999-10-08 2002-05-07 Denso Corporation Insulated gate bipolar transistor
US6465839B2 (en) 2000-04-07 2002-10-15 Denso Corporation Semiconductor device having lateral MOSFET (LDMOS)
JP2005142511A (en) * 2003-11-10 2005-06-02 Toyota Motor Corp Semiconductor device and its manufacturing method
JP2005327770A (en) * 2004-05-12 2005-11-24 Shindengen Electric Mfg Co Ltd Semiconductor device and manufacturing method therefor
JP2006173297A (en) * 2004-12-15 2006-06-29 Denso Corp Igbt
US7358127B2 (en) 2002-02-20 2008-04-15 Fuji Electric Holdings Co., Ltd. Power semiconductor rectifier having broad buffer structure and method of manufacturing thereof
US9954053B2 (en) 2014-09-17 2018-04-24 Fuji Electric Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
US11121222B2 (en) 2004-09-03 2021-09-14 Greenthread, Llc Semiconductor devices with graded dopant regions

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02206174A (en) * 1989-02-06 1990-08-15 Fuji Electric Co Ltd P-channel insulated-gate bipolar transistor
JPH02304983A (en) * 1989-05-19 1990-12-18 Fuji Electric Co Ltd P-channel insulated gate type bipolar transistor
US5161809A (en) * 1990-07-16 1992-11-10 Nippon Leakless Industry Co., Ltd. Metal gasket
EP0725446A1 (en) * 1995-02-02 1996-08-07 Motorola, Inc. Insulated gate bipolar semiconductor device and method therefor
US6384431B1 (en) 1999-10-08 2002-05-07 Denso Corporation Insulated gate bipolar transistor
US6573144B2 (en) 2000-04-07 2003-06-03 Shigeki Takahashi Method for manufacturing a semiconductor device having lateral MOSFET (LDMOS)
US6465839B2 (en) 2000-04-07 2002-10-15 Denso Corporation Semiconductor device having lateral MOSFET (LDMOS)
US7358127B2 (en) 2002-02-20 2008-04-15 Fuji Electric Holdings Co., Ltd. Power semiconductor rectifier having broad buffer structure and method of manufacturing thereof
JP2005142511A (en) * 2003-11-10 2005-06-02 Toyota Motor Corp Semiconductor device and its manufacturing method
JP2005327770A (en) * 2004-05-12 2005-11-24 Shindengen Electric Mfg Co Ltd Semiconductor device and manufacturing method therefor
US11121222B2 (en) 2004-09-03 2021-09-14 Greenthread, Llc Semiconductor devices with graded dopant regions
US11316014B2 (en) 2004-09-03 2022-04-26 Greenthread, Llc Semiconductor devices with graded dopant regions
JP2006173297A (en) * 2004-12-15 2006-06-29 Denso Corp Igbt
US9954053B2 (en) 2014-09-17 2018-04-24 Fuji Electric Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
US10431650B2 (en) 2014-09-17 2019-10-01 Fuji Electric Co., Ltd. Method of manufacturing semiconductor device

Similar Documents

Publication Publication Date Title
JPS6482563A (en) Semiconductor device
DE3580891D1 (en) SEMICONDUCTOR ARRANGEMENT WITH SEVERAL TRANSITIONS.
GB1265204A (en)
GB1328145A (en) Method of producing integrated cirucits
GB1073551A (en) Integrated circuit comprising a diode and method of making the same
JPS6453453A (en) Heterojunction bipolar transistor
JPS645070A (en) Vertical insulated gate field effect transistor
JPS6439069A (en) Field-effect transistor
GB1168219A (en) Bistable Semiconductor Integrated Device
JPS56150862A (en) Semiconductor device
GB1482298A (en) Monolithically integrated circuit
USRE28500E (en) Low noise field effect transistor with channel having subsurface portion of high conductivity
JPS6449274A (en) Superhigh-speed semiconductor device
JPS572565A (en) Semiconductor device
JPS5736854A (en) Integrated circuit device
FR2319977A1 (en) Monolithically integrated semiconductor device - integrates bipolar pref. NPN transistor structure with others using gaps in at least one common transistor zone
GB1333988A (en) Isolation of semiconductor devices
JPS6482565A (en) Field-effect semiconductor device
JPS56115572A (en) Field effect transistor
GB1231543A (en)
JPS5752163A (en) Lateral type bipolar transistor
JPS5633872A (en) Injection type logical semiconductor device
JPS57154867A (en) Semiconductor device
JPS5598870A (en) Semiconductor device
JPS57120365A (en) Semiconductor device