JPS6451626A - Hydrogenating method to silicon thin-film transistor - Google Patents

Abstract

PURPOSE:To reduce plasma damage while improving the efficiency of hydrogenation, to diminish leakage currents, to increase ON currents and to lower threshold voltage by forming primary plasma by argon, nitrogen, hydrogen, etc., through electron cyclotron resonance and shaping hydrogen plasma by charge exchange between the primary plasma and an atmosphere containing hydrogen. CONSTITUTION:Argon, nitrogen, hydrogen, etc., are introduced into a plasma chamber 13 from a gas introducing tube 16. Microwaves are induced into the plasma chamber 13 through a waveguide 15 while a magnet coil 18 is driven. A gas containing hydrogen is introduced into a plasma irradiating chamber 14 through a gas introducing tube 17. Consequently, high density plasma is formed into the plasma chamber 13 by an output from microwaves and electron cyclotron resonance by the magnetic field of the magnet coil 18. Charges are exchanged between a high-density plasma flow drawn out of the plasma chamber 13 and hydrogen in the plasma irradiating chamber 14 in the plasma irradiating chamber 14, thus shaping hydrogen plasma. An silicon thin-film transistor 11 is irradiated with the hydrogen plasma.