JPS6451626A - Hydrogenating method to silicon thin-film transistor - Google Patents
Hydrogenating method to silicon thin-film transistorInfo
- Publication number
- JPS6451626A JPS6451626A JP62209558A JP20955887A JPS6451626A JP S6451626 A JPS6451626 A JP S6451626A JP 62209558 A JP62209558 A JP 62209558A JP 20955887 A JP20955887 A JP 20955887A JP S6451626 A JPS6451626 A JP S6451626A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- hydrogen
- chamber
- film transistor
- silicon thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thin Film Transistor (AREA)
- Plasma Technology (AREA)
Abstract
PURPOSE:To reduce plasma damage while improving the efficiency of hydrogenation, to diminish leakage currents, to increase ON currents and to lower threshold voltage by forming primary plasma by argon, nitrogen, hydrogen, etc., through electron cyclotron resonance and shaping hydrogen plasma by charge exchange between the primary plasma and an atmosphere containing hydrogen. CONSTITUTION:Argon, nitrogen, hydrogen, etc., are introduced into a plasma chamber 13 from a gas introducing tube 16. Microwaves are induced into the plasma chamber 13 through a waveguide 15 while a magnet coil 18 is driven. A gas containing hydrogen is introduced into a plasma irradiating chamber 14 through a gas introducing tube 17. Consequently, high density plasma is formed into the plasma chamber 13 by an output from microwaves and electron cyclotron resonance by the magnetic field of the magnet coil 18. Charges are exchanged between a high-density plasma flow drawn out of the plasma chamber 13 and hydrogen in the plasma irradiating chamber 14 in the plasma irradiating chamber 14, thus shaping hydrogen plasma. An silicon thin-film transistor 11 is irradiated with the hydrogen plasma.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62209558A JPS6451626A (en) | 1987-08-24 | 1987-08-24 | Hydrogenating method to silicon thin-film transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62209558A JPS6451626A (en) | 1987-08-24 | 1987-08-24 | Hydrogenating method to silicon thin-film transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6451626A true JPS6451626A (en) | 1989-02-27 |
Family
ID=16574812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62209558A Pending JPS6451626A (en) | 1987-08-24 | 1987-08-24 | Hydrogenating method to silicon thin-film transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6451626A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5648276A (en) * | 1993-05-27 | 1997-07-15 | Sony Corporation | Method and apparatus for fabricating a thin film semiconductor device |
US6281053B1 (en) | 1997-12-09 | 2001-08-28 | Nec Corporation | Thin film transistor with reduced hydrogen passivation process time |
KR100926099B1 (en) * | 2003-02-06 | 2009-11-11 | 엘지디스플레이 주식회사 | Fabricating method of liquid crystal display panel |
-
1987
- 1987-08-24 JP JP62209558A patent/JPS6451626A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5648276A (en) * | 1993-05-27 | 1997-07-15 | Sony Corporation | Method and apparatus for fabricating a thin film semiconductor device |
US6281053B1 (en) | 1997-12-09 | 2001-08-28 | Nec Corporation | Thin film transistor with reduced hydrogen passivation process time |
KR100926099B1 (en) * | 2003-02-06 | 2009-11-11 | 엘지디스플레이 주식회사 | Fabricating method of liquid crystal display panel |
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