JPS5553422A - Plasma reactor - Google Patents
Plasma reactorInfo
- Publication number
- JPS5553422A JPS5553422A JP12705078A JP12705078A JPS5553422A JP S5553422 A JPS5553422 A JP S5553422A JP 12705078 A JP12705078 A JP 12705078A JP 12705078 A JP12705078 A JP 12705078A JP S5553422 A JPS5553422 A JP S5553422A
- Authority
- JP
- Japan
- Prior art keywords
- ions
- magnetic field
- static magnetic
- tube
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Abstract
PURPOSE: To lengthen the life of ions and increase ion concentration, by making a fixed mass of ions resonate selectively and heating it from the magnitude of the static magnetic field required for resonance between a high freqency and an ion cyclotron.
CONSTITUTION: Glass tube 3 for holding plasma is exhausted, gas 6 is drawn into tube 3 from gas inlet 5 and is maintained at a fixed pressure. High-frequency power is applied to plasma generating high-frequency impressed voltage 7 outside tube 3, and thereby gas plasma is produced. On the other hand, another electrode 8 for applying high-frequency power is provided outside tube 3 in ion cyclotron resonating and heating region 2. By a separate cylindrical magnet R, a static magnetic field is generated. From the magnitude of the static magnetic field required for resonance between the high frequency and the ion cyclotron, it is possible to make a fixed mass of ions resonate selectively and heat it. By this, the life of ions can be lengthened and ion concentration can be increased.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12705078A JPS5553422A (en) | 1978-10-16 | 1978-10-16 | Plasma reactor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12705078A JPS5553422A (en) | 1978-10-16 | 1978-10-16 | Plasma reactor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5553422A true JPS5553422A (en) | 1980-04-18 |
JPS6214937B2 JPS6214937B2 (en) | 1987-04-04 |
Family
ID=14950356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12705078A Granted JPS5553422A (en) | 1978-10-16 | 1978-10-16 | Plasma reactor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5553422A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63239926A (en) * | 1987-03-27 | 1988-10-05 | Nec Corp | Plasma growing and reacting apparatus |
US5279669A (en) * | 1991-12-13 | 1994-01-18 | International Business Machines Corporation | Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions |
US5398548A (en) * | 1993-02-22 | 1995-03-21 | Mitsubishi Denki Kabushiki Kaisha | Karman vortex flow meter |
EP1182685A1 (en) * | 2000-08-09 | 2002-02-27 | Toyo Technologies, Inc. | Plasma polisher with grazing angle ion collision(GAPP) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5171597A (en) * | 1974-12-18 | 1976-06-21 | Hitachi Ltd | IONKAKOSOCHI |
JPS5467377A (en) * | 1977-11-09 | 1979-05-30 | Hitachi Ltd | Plasma processing apparatus |
JPS5483376A (en) * | 1977-12-16 | 1979-07-03 | Fujitsu Ltd | Plasma treatment equipment |
-
1978
- 1978-10-16 JP JP12705078A patent/JPS5553422A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5171597A (en) * | 1974-12-18 | 1976-06-21 | Hitachi Ltd | IONKAKOSOCHI |
JPS5467377A (en) * | 1977-11-09 | 1979-05-30 | Hitachi Ltd | Plasma processing apparatus |
JPS5483376A (en) * | 1977-12-16 | 1979-07-03 | Fujitsu Ltd | Plasma treatment equipment |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63239926A (en) * | 1987-03-27 | 1988-10-05 | Nec Corp | Plasma growing and reacting apparatus |
US5279669A (en) * | 1991-12-13 | 1994-01-18 | International Business Machines Corporation | Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions |
US5398548A (en) * | 1993-02-22 | 1995-03-21 | Mitsubishi Denki Kabushiki Kaisha | Karman vortex flow meter |
EP1182685A1 (en) * | 2000-08-09 | 2002-02-27 | Toyo Technologies, Inc. | Plasma polisher with grazing angle ion collision(GAPP) |
Also Published As
Publication number | Publication date |
---|---|
JPS6214937B2 (en) | 1987-04-04 |
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