JPS5553422A - Plasma reactor - Google Patents

Plasma reactor

Info

Publication number
JPS5553422A
JPS5553422A JP12705078A JP12705078A JPS5553422A JP S5553422 A JPS5553422 A JP S5553422A JP 12705078 A JP12705078 A JP 12705078A JP 12705078 A JP12705078 A JP 12705078A JP S5553422 A JPS5553422 A JP S5553422A
Authority
JP
Japan
Prior art keywords
ions
magnetic field
static magnetic
tube
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12705078A
Other languages
Japanese (ja)
Other versions
JPS6214937B2 (en
Inventor
Haruhiko Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12705078A priority Critical patent/JPS5553422A/en
Publication of JPS5553422A publication Critical patent/JPS5553422A/en
Publication of JPS6214937B2 publication Critical patent/JPS6214937B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE: To lengthen the life of ions and increase ion concentration, by making a fixed mass of ions resonate selectively and heating it from the magnitude of the static magnetic field required for resonance between a high freqency and an ion cyclotron.
CONSTITUTION: Glass tube 3 for holding plasma is exhausted, gas 6 is drawn into tube 3 from gas inlet 5 and is maintained at a fixed pressure. High-frequency power is applied to plasma generating high-frequency impressed voltage 7 outside tube 3, and thereby gas plasma is produced. On the other hand, another electrode 8 for applying high-frequency power is provided outside tube 3 in ion cyclotron resonating and heating region 2. By a separate cylindrical magnet R, a static magnetic field is generated. From the magnitude of the static magnetic field required for resonance between the high frequency and the ion cyclotron, it is possible to make a fixed mass of ions resonate selectively and heat it. By this, the life of ions can be lengthened and ion concentration can be increased.
COPYRIGHT: (C)1980,JPO&Japio
JP12705078A 1978-10-16 1978-10-16 Plasma reactor Granted JPS5553422A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12705078A JPS5553422A (en) 1978-10-16 1978-10-16 Plasma reactor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12705078A JPS5553422A (en) 1978-10-16 1978-10-16 Plasma reactor

Publications (2)

Publication Number Publication Date
JPS5553422A true JPS5553422A (en) 1980-04-18
JPS6214937B2 JPS6214937B2 (en) 1987-04-04

Family

ID=14950356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12705078A Granted JPS5553422A (en) 1978-10-16 1978-10-16 Plasma reactor

Country Status (1)

Country Link
JP (1) JPS5553422A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63239926A (en) * 1987-03-27 1988-10-05 Nec Corp Plasma growing and reacting apparatus
US5279669A (en) * 1991-12-13 1994-01-18 International Business Machines Corporation Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions
US5398548A (en) * 1993-02-22 1995-03-21 Mitsubishi Denki Kabushiki Kaisha Karman vortex flow meter
EP1182685A1 (en) * 2000-08-09 2002-02-27 Toyo Technologies, Inc. Plasma polisher with grazing angle ion collision(GAPP)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5171597A (en) * 1974-12-18 1976-06-21 Hitachi Ltd IONKAKOSOCHI
JPS5467377A (en) * 1977-11-09 1979-05-30 Hitachi Ltd Plasma processing apparatus
JPS5483376A (en) * 1977-12-16 1979-07-03 Fujitsu Ltd Plasma treatment equipment

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5171597A (en) * 1974-12-18 1976-06-21 Hitachi Ltd IONKAKOSOCHI
JPS5467377A (en) * 1977-11-09 1979-05-30 Hitachi Ltd Plasma processing apparatus
JPS5483376A (en) * 1977-12-16 1979-07-03 Fujitsu Ltd Plasma treatment equipment

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63239926A (en) * 1987-03-27 1988-10-05 Nec Corp Plasma growing and reacting apparatus
US5279669A (en) * 1991-12-13 1994-01-18 International Business Machines Corporation Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions
US5398548A (en) * 1993-02-22 1995-03-21 Mitsubishi Denki Kabushiki Kaisha Karman vortex flow meter
EP1182685A1 (en) * 2000-08-09 2002-02-27 Toyo Technologies, Inc. Plasma polisher with grazing angle ion collision(GAPP)

Also Published As

Publication number Publication date
JPS6214937B2 (en) 1987-04-04

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