JPS6450450A - Package for semiconductor integrated circuit - Google Patents

Package for semiconductor integrated circuit

Info

Publication number
JPS6450450A
JPS6450450A JP20690987A JP20690987A JPS6450450A JP S6450450 A JPS6450450 A JP S6450450A JP 20690987 A JP20690987 A JP 20690987A JP 20690987 A JP20690987 A JP 20690987A JP S6450450 A JPS6450450 A JP S6450450A
Authority
JP
Japan
Prior art keywords
input
output terminals
chips
board
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20690987A
Other languages
Japanese (ja)
Inventor
Osamu Shimada
Toshio Sudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP20690987A priority Critical patent/JPS6450450A/en
Publication of JPS6450450A publication Critical patent/JPS6450450A/en
Pending legal-status Critical Current

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  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To eliminate a decline of fast performance of an integrated circuit by breaking plated wirings which electrically connect ends to input and output terminals and the other ends to a die pad of on board chips respectively at desired points in the neighborhood of the input and output terminal for the on board chips. CONSTITUTION:Input and output terminals 22 for on board chips and plated wiring 26 which electrically connects respective ends to the input and output terminals 22 and electrically joins the other ends to the die pad 25 of on board chips are formed on a substrate 21 which has semiconductor chips on board. The input and output terminals 22 for the outside of a package and the other input and output terminals 22 for the chips are electroplated by planted wiring 26, while the plated wiring 26 are formed to break at desired points in the neighborhood of the input and output terminals 22. Therefore, an open stab due to residue plated wiring is eliminated and a package for a fast operation integrated circuit can be obtained.
JP20690987A 1987-08-20 1987-08-20 Package for semiconductor integrated circuit Pending JPS6450450A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20690987A JPS6450450A (en) 1987-08-20 1987-08-20 Package for semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20690987A JPS6450450A (en) 1987-08-20 1987-08-20 Package for semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS6450450A true JPS6450450A (en) 1989-02-27

Family

ID=16531082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20690987A Pending JPS6450450A (en) 1987-08-20 1987-08-20 Package for semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS6450450A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6486052B1 (en) 1999-08-16 2002-11-26 Nec Corporation Package having terminated plating layer and its manufacturing method
JP2007335581A (en) * 2006-06-14 2007-12-27 Renesas Technology Corp Method for manufacturing semiconductor device
US8213185B2 (en) 2008-10-08 2012-07-03 Panasonic Corporation Interposer substrate including capacitor for adjusting phase of signal transmitted in same interposer substrate

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6486052B1 (en) 1999-08-16 2002-11-26 Nec Corporation Package having terminated plating layer and its manufacturing method
JP2007335581A (en) * 2006-06-14 2007-12-27 Renesas Technology Corp Method for manufacturing semiconductor device
US8258018B2 (en) 2006-06-14 2012-09-04 Renesas Electronics Corporation Manufacturing method of semiconductor device
US8420451B2 (en) 2006-06-14 2013-04-16 Renesas Electronics Corporation Manufacturing method of semiconductor device
KR101296572B1 (en) * 2006-06-14 2013-08-13 르네사스 일렉트로닉스 가부시키가이샤 Menufacturing method of semiconductor device
US8213185B2 (en) 2008-10-08 2012-07-03 Panasonic Corporation Interposer substrate including capacitor for adjusting phase of signal transmitted in same interposer substrate

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