JPS5710969A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS5710969A
JPS5710969A JP8631080A JP8631080A JPS5710969A JP S5710969 A JPS5710969 A JP S5710969A JP 8631080 A JP8631080 A JP 8631080A JP 8631080 A JP8631080 A JP 8631080A JP S5710969 A JPS5710969 A JP S5710969A
Authority
JP
Japan
Prior art keywords
region
oxide film
silicon film
concentration
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8631080A
Other languages
Japanese (ja)
Inventor
Kunio Aomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8631080A priority Critical patent/JPS5710969A/en
Publication of JPS5710969A publication Critical patent/JPS5710969A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To enable a transistor of small base resistance to be readily manufactured, by constituting such that a part of the emitter electrode is formed from a silicon film, and the high-concentration region of the base region is provided in the region not covered with the silicon film in a self alignment manner. CONSTITUTION:On an N type silicon substrate 21, an oxide film 22, a P type base region 23 formed by diffusing boron, and an oxide film 24 are formed. Then, the oxide film 24 is provided with an opening, and a polycrystalline silicon film 26 is provided at said opening and the periphery thereof. Then, with the silicon film 26 and the oxide film 22 as a mask, boron of high concentration is added into the base region 23 to form high-concentration base regions 27 and 27'. Then, through the silicon film 26, phosphorus or arsenic is diffused into the low-concentration base region 23 to form an N type emitter region 28. Then, after openings have been selectively provided in the oxide film 24, electrodes 210, 201' and 201'' are formed. Said method can be applied also to a PNP type transistor.
JP8631080A 1980-06-25 1980-06-25 Semiconductor device and manufacture thereof Pending JPS5710969A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8631080A JPS5710969A (en) 1980-06-25 1980-06-25 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8631080A JPS5710969A (en) 1980-06-25 1980-06-25 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5710969A true JPS5710969A (en) 1982-01-20

Family

ID=13883254

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8631080A Pending JPS5710969A (en) 1980-06-25 1980-06-25 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5710969A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6076165A (en) * 1983-09-30 1985-04-30 Nec Kansai Ltd Transistor
JPS62224968A (en) * 1986-03-27 1987-10-02 Matsushita Electronics Corp Manufacture of semiconductor device
JPS6351673A (en) * 1985-03-23 1988-03-04 エステイ−シ−　ピ−エルシ− Manufacture of bipolar transistor
US6651526B1 (en) 1999-09-06 2003-11-25 Yamaha Corporation Steering wheel and manufacturing method therefor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5391672A (en) * 1977-01-24 1978-08-11 Nec Corp Manufacture for semiconductor device
JPS553686A (en) * 1978-06-23 1980-01-11 Matsushita Electric Ind Co Ltd Preparation of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5391672A (en) * 1977-01-24 1978-08-11 Nec Corp Manufacture for semiconductor device
JPS553686A (en) * 1978-06-23 1980-01-11 Matsushita Electric Ind Co Ltd Preparation of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6076165A (en) * 1983-09-30 1985-04-30 Nec Kansai Ltd Transistor
JPS6351673A (en) * 1985-03-23 1988-03-04 エステイ−シ−　ピ−エルシ− Manufacture of bipolar transistor
JPS62224968A (en) * 1986-03-27 1987-10-02 Matsushita Electronics Corp Manufacture of semiconductor device
US6651526B1 (en) 1999-09-06 2003-11-25 Yamaha Corporation Steering wheel and manufacturing method therefor

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