JPS6445148A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS6445148A
JPS6445148A JP20254787A JP20254787A JPS6445148A JP S6445148 A JPS6445148 A JP S6445148A JP 20254787 A JP20254787 A JP 20254787A JP 20254787 A JP20254787 A JP 20254787A JP S6445148 A JPS6445148 A JP S6445148A
Authority
JP
Japan
Prior art keywords
film
interlayer insulating
growth method
layer
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20254787A
Other languages
Japanese (ja)
Inventor
Hitoshi Kojima
Toshimichi Iwamori
Yasushi Sakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP20254787A priority Critical patent/JPS6445148A/en
Publication of JPS6445148A publication Critical patent/JPS6445148A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To contrive flattening of an interlayer insulating layer without causing cracks and the like by a method wherein a silanol and/or siloxane SOG film is formed in a multilayer structure, and an interlayer insulating film is provided by forming an oxide film using a vapor growth method. CONSTITUTION:An oxide film 4 is formed by conducting a plasmic vapor growth method, and a multilayer of silanol and/or siloxane SOG (spin on glass) film is formed on the oxide film 4. Then, an interlayer insulating film 2 is formed by providing an oxide film 6 on the SOG film 5 using a vapor growth method. To be more precise, an oxide film 4 is formed as the first layer of the interlayer insulating film 2 by conducting a plasmic vapor growth method, a multilayer silanol SOG film 5 is formed as the second layer, and an oxide 6 is constituted as the third layer using a vapor-growth method. As a result, the interlayer insulating film can be flattened without generation of cracks and the like.
JP20254787A 1987-08-13 1987-08-13 Semiconductor device and manufacture thereof Pending JPS6445148A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20254787A JPS6445148A (en) 1987-08-13 1987-08-13 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20254787A JPS6445148A (en) 1987-08-13 1987-08-13 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6445148A true JPS6445148A (en) 1989-02-17

Family

ID=16459309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20254787A Pending JPS6445148A (en) 1987-08-13 1987-08-13 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6445148A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03222426A (en) * 1990-01-29 1991-10-01 Yamaha Corp Formation of multilayer interconnection
JPH04167429A (en) * 1990-10-30 1992-06-15 Mitsubishi Electric Corp Semiconductor device and its manufacture
US6014358A (en) * 1996-04-04 2000-01-11 Teac Corporation Recording medium cartridge loading device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100447A (en) * 1980-01-16 1981-08-12 Fujitsu Ltd Lamination structure body
JPS60109248A (en) * 1983-11-18 1985-06-14 Hitachi Ltd Semiconductor ic device and manufacture thereof
JPS60113444A (en) * 1983-11-25 1985-06-19 Hitachi Ltd Multilayer interconnection structure
JPS61102754A (en) * 1984-10-26 1986-05-21 Nec Corp Semiconductor device
JPS6266635A (en) * 1985-09-19 1987-03-26 Nec Corp Flattening method
JPS62154643A (en) * 1985-12-26 1987-07-09 Matsushita Electronics Corp Manufacture of semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100447A (en) * 1980-01-16 1981-08-12 Fujitsu Ltd Lamination structure body
JPS60109248A (en) * 1983-11-18 1985-06-14 Hitachi Ltd Semiconductor ic device and manufacture thereof
JPS60113444A (en) * 1983-11-25 1985-06-19 Hitachi Ltd Multilayer interconnection structure
JPS61102754A (en) * 1984-10-26 1986-05-21 Nec Corp Semiconductor device
JPS6266635A (en) * 1985-09-19 1987-03-26 Nec Corp Flattening method
JPS62154643A (en) * 1985-12-26 1987-07-09 Matsushita Electronics Corp Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03222426A (en) * 1990-01-29 1991-10-01 Yamaha Corp Formation of multilayer interconnection
JPH04167429A (en) * 1990-10-30 1992-06-15 Mitsubishi Electric Corp Semiconductor device and its manufacture
US6014358A (en) * 1996-04-04 2000-01-11 Teac Corporation Recording medium cartridge loading device

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