JPS6445148A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS6445148A JPS6445148A JP20254787A JP20254787A JPS6445148A JP S6445148 A JPS6445148 A JP S6445148A JP 20254787 A JP20254787 A JP 20254787A JP 20254787 A JP20254787 A JP 20254787A JP S6445148 A JPS6445148 A JP S6445148A
- Authority
- JP
- Japan
- Prior art keywords
- film
- interlayer insulating
- growth method
- layer
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To contrive flattening of an interlayer insulating layer without causing cracks and the like by a method wherein a silanol and/or siloxane SOG film is formed in a multilayer structure, and an interlayer insulating film is provided by forming an oxide film using a vapor growth method. CONSTITUTION:An oxide film 4 is formed by conducting a plasmic vapor growth method, and a multilayer of silanol and/or siloxane SOG (spin on glass) film is formed on the oxide film 4. Then, an interlayer insulating film 2 is formed by providing an oxide film 6 on the SOG film 5 using a vapor growth method. To be more precise, an oxide film 4 is formed as the first layer of the interlayer insulating film 2 by conducting a plasmic vapor growth method, a multilayer silanol SOG film 5 is formed as the second layer, and an oxide 6 is constituted as the third layer using a vapor-growth method. As a result, the interlayer insulating film can be flattened without generation of cracks and the like.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20254787A JPS6445148A (en) | 1987-08-13 | 1987-08-13 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20254787A JPS6445148A (en) | 1987-08-13 | 1987-08-13 | Semiconductor device and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6445148A true JPS6445148A (en) | 1989-02-17 |
Family
ID=16459309
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20254787A Pending JPS6445148A (en) | 1987-08-13 | 1987-08-13 | Semiconductor device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6445148A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03222426A (en) * | 1990-01-29 | 1991-10-01 | Yamaha Corp | Formation of multilayer interconnection |
JPH04167429A (en) * | 1990-10-30 | 1992-06-15 | Mitsubishi Electric Corp | Semiconductor device and its manufacture |
US6014358A (en) * | 1996-04-04 | 2000-01-11 | Teac Corporation | Recording medium cartridge loading device |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56100447A (en) * | 1980-01-16 | 1981-08-12 | Fujitsu Ltd | Lamination structure body |
JPS60109248A (en) * | 1983-11-18 | 1985-06-14 | Hitachi Ltd | Semiconductor ic device and manufacture thereof |
JPS60113444A (en) * | 1983-11-25 | 1985-06-19 | Hitachi Ltd | Multilayer interconnection structure |
JPS61102754A (en) * | 1984-10-26 | 1986-05-21 | Nec Corp | Semiconductor device |
JPS6266635A (en) * | 1985-09-19 | 1987-03-26 | Nec Corp | Flattening method |
JPS62154643A (en) * | 1985-12-26 | 1987-07-09 | Matsushita Electronics Corp | Manufacture of semiconductor device |
-
1987
- 1987-08-13 JP JP20254787A patent/JPS6445148A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56100447A (en) * | 1980-01-16 | 1981-08-12 | Fujitsu Ltd | Lamination structure body |
JPS60109248A (en) * | 1983-11-18 | 1985-06-14 | Hitachi Ltd | Semiconductor ic device and manufacture thereof |
JPS60113444A (en) * | 1983-11-25 | 1985-06-19 | Hitachi Ltd | Multilayer interconnection structure |
JPS61102754A (en) * | 1984-10-26 | 1986-05-21 | Nec Corp | Semiconductor device |
JPS6266635A (en) * | 1985-09-19 | 1987-03-26 | Nec Corp | Flattening method |
JPS62154643A (en) * | 1985-12-26 | 1987-07-09 | Matsushita Electronics Corp | Manufacture of semiconductor device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03222426A (en) * | 1990-01-29 | 1991-10-01 | Yamaha Corp | Formation of multilayer interconnection |
JPH04167429A (en) * | 1990-10-30 | 1992-06-15 | Mitsubishi Electric Corp | Semiconductor device and its manufacture |
US6014358A (en) * | 1996-04-04 | 2000-01-11 | Teac Corporation | Recording medium cartridge loading device |
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