JPS6441314A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS6441314A
JPS6441314A JP62197489A JP19748987A JPS6441314A JP S6441314 A JPS6441314 A JP S6441314A JP 62197489 A JP62197489 A JP 62197489A JP 19748987 A JP19748987 A JP 19748987A JP S6441314 A JPS6441314 A JP S6441314A
Authority
JP
Japan
Prior art keywords
power line
electric charge
output
mis
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62197489A
Other languages
Japanese (ja)
Inventor
Kazuto Nakakido
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62197489A priority Critical patent/JPS6441314A/en
Publication of JPS6441314A publication Critical patent/JPS6441314A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electronic Switches (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To improve the output response characteristic by separating a power line leading to a means supplying electric charge to a gate of an output MIS transistor(TR) and a power line supplying electric charge to the output MIS TR. CONSTITUTION:P-channel MIS TR Qp1, N-channel MIS TRS QN1-QN2 and independent power line resistors R1, R2 are provided. Then the power line through which electric charge is supplied to the means supplying electric charge to a gate of the MIS TR QN2 and the power line through which electric charge to the TR QN2 are separated physically. Thus, even when a large current flows to the TR QN2 and the potential at a node N3 is lowered, the effect does not give effect onto CMOS TRs (Qp1, QN1) and the gate of the output TR QN2 is not affected by the potential drop. Thus, the time when the output reaches a desired level is quickened.
JP62197489A 1987-08-06 1987-08-06 Semiconductor integrated circuit Pending JPS6441314A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62197489A JPS6441314A (en) 1987-08-06 1987-08-06 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62197489A JPS6441314A (en) 1987-08-06 1987-08-06 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS6441314A true JPS6441314A (en) 1989-02-13

Family

ID=16375322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62197489A Pending JPS6441314A (en) 1987-08-06 1987-08-06 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS6441314A (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5528534A (en) * 1978-08-17 1980-02-29 Nec Corp High-speed drive circuit
JPS6042927A (en) * 1983-08-19 1985-03-07 Matsushita Electric Ind Co Ltd Power mos-fet incorporating gate driving circuit
JPS6068717A (en) * 1983-09-22 1985-04-19 Fujitsu Ltd Output circuit
JPS61152122A (en) * 1984-12-25 1986-07-10 Fuji Electric Co Ltd Fet drive circuit for driving load
JPS62210725A (en) * 1986-03-12 1987-09-16 Hitachi Ltd Output buffer circuit system
JPS63234623A (en) * 1987-03-23 1988-09-29 Toshiba Corp Semiconductor integrated circuit

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5528534A (en) * 1978-08-17 1980-02-29 Nec Corp High-speed drive circuit
JPS6042927A (en) * 1983-08-19 1985-03-07 Matsushita Electric Ind Co Ltd Power mos-fet incorporating gate driving circuit
JPS6068717A (en) * 1983-09-22 1985-04-19 Fujitsu Ltd Output circuit
JPS61152122A (en) * 1984-12-25 1986-07-10 Fuji Electric Co Ltd Fet drive circuit for driving load
JPS62210725A (en) * 1986-03-12 1987-09-16 Hitachi Ltd Output buffer circuit system
JPS63234623A (en) * 1987-03-23 1988-09-29 Toshiba Corp Semiconductor integrated circuit

Similar Documents

Publication Publication Date Title
JPS6449419A (en) Cmos vlsi output driver with controlled rising and falling time
JPS6462896A (en) Sensing amplifier
KR920007339A (en) Power supply voltage adjustment circuit
FR2571178B1 (en) INTEGRATED CIRCUIT STRUCTURE HAVING HIGH VOLTAGE HOLD CMOS TRANSISTORS, AND MANUFACTURING METHOD THEREOF
EP0701327B1 (en) BiCMOS push-pull type logic apparatus with voltage clamp circuit and clamp releasing circuit
JPS5625290A (en) Semiconductor circuit
US5218247A (en) CMIS circuit and its driver
JPS6441314A (en) Semiconductor integrated circuit
JPS6444619A (en) Level shift circuit
JPS6478520A (en) Power-on reset circuit
JPS5671313A (en) Monolithic reference current source
JPS5725726A (en) Synchronous decoder
JPS6414799A (en) Program circuit
JPH0624787Y2 (en) Switching circuit
JP2772069B2 (en) Constant current circuit
JPS57101406A (en) Mos analog signal amplifying circuit
JPS57152731A (en) Interface circuit for i2l logic circuit
JPS6434016A (en) Output driver circuit
JP2846338B2 (en) Schmitt trigger circuit
JPH01305618A (en) Cmos inverter output circuit
JPS5793573A (en) Mis semiconductor device
JPS5478069A (en) Dual complementary mos transistor circuit
JPS54555A (en) Automatic gain control unit
JPS555565A (en) Semiconductor integrated circuit
JPS6412615A (en) Holding circuit