JPS6441218A - Surface treatment - Google Patents

Surface treatment

Info

Publication number
JPS6441218A
JPS6441218A JP19625887A JP19625887A JPS6441218A JP S6441218 A JPS6441218 A JP S6441218A JP 19625887 A JP19625887 A JP 19625887A JP 19625887 A JP19625887 A JP 19625887A JP S6441218 A JPS6441218 A JP S6441218A
Authority
JP
Japan
Prior art keywords
gas
discharge
layer
shaped
hydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19625887A
Other languages
Japanese (ja)
Other versions
JPH0611038B2 (en
Inventor
Eiji Igawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP19625887A priority Critical patent/JPH0611038B2/en
Publication of JPS6441218A publication Critical patent/JPS6441218A/en
Publication of JPH0611038B2 publication Critical patent/JPH0611038B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain a surface protective film, on which a surface oxide film is not formed, by exposing a sample in the discharge of a gas containing halocarbon gas, to which hydrogen gas is added, changing discharge into the conditions of discharge, in which a layer containing carbon is shaped, and exposing the sample in discharge. CONSTITUTION:SiO2 12 is etched by a CF4 gas by using a resist mask 11. A contaminating layer 14 is shaped onto the etched surface on an Si substrate 13. The resist 11 is ashed by oxygen plasma, CF4 gas, to which hydrogen is added, is flowed into a dry etching devide, and the surface is treated by plasma. When hydrogen gas is increased successively, a thin oxide film on the contaminating layer 14 on the substrate 13 is removed, and a surface protective layer 15, the surface of which is replaced with a polymer containing fluorine, is shaped.
JP19625887A 1987-08-07 1987-08-07 Surface treatment method Expired - Lifetime JPH0611038B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19625887A JPH0611038B2 (en) 1987-08-07 1987-08-07 Surface treatment method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19625887A JPH0611038B2 (en) 1987-08-07 1987-08-07 Surface treatment method

Publications (2)

Publication Number Publication Date
JPS6441218A true JPS6441218A (en) 1989-02-13
JPH0611038B2 JPH0611038B2 (en) 1994-02-09

Family

ID=16354819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19625887A Expired - Lifetime JPH0611038B2 (en) 1987-08-07 1987-08-07 Surface treatment method

Country Status (1)

Country Link
JP (1) JPH0611038B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04103750U (en) * 1991-01-25 1992-09-07 大洋漁業株式会社 mobile phone
JPH05102076A (en) * 1991-03-06 1993-04-23 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH09148268A (en) * 1995-11-22 1997-06-06 Nec Corp Method for manufacturing semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04103750U (en) * 1991-01-25 1992-09-07 大洋漁業株式会社 mobile phone
JPH05102076A (en) * 1991-03-06 1993-04-23 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH09148268A (en) * 1995-11-22 1997-06-06 Nec Corp Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JPH0611038B2 (en) 1994-02-09

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