JPS5680126A - Formation of monocrystalline semiconductor - Google Patents

Formation of monocrystalline semiconductor

Info

Publication number
JPS5680126A
JPS5680126A JP15678979A JP15678979A JPS5680126A JP S5680126 A JPS5680126 A JP S5680126A JP 15678979 A JP15678979 A JP 15678979A JP 15678979 A JP15678979 A JP 15678979A JP S5680126 A JPS5680126 A JP S5680126A
Authority
JP
Japan
Prior art keywords
film
monocrystalline
crystal grain
grain boundaries
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15678979A
Other languages
Japanese (ja)
Other versions
JPS6322056B2 (en
Inventor
Seiichi Iwamatsu
Mitsuru Ogawa
Kenichi Asanami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP15678979A priority Critical patent/JPS5680126A/en
Publication of JPS5680126A publication Critical patent/JPS5680126A/en
Publication of JPS6322056B2 publication Critical patent/JPS6322056B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation

Abstract

PURPOSE:To permit the formation of a monocrystalline semiconductor film excluding crystal grain boundaries by scanning and heating a polycrystalline or amorphous semiconductor film provided on a dielectric by energy beams wherein ion implantation treatment is applied and heat treatment is further followed. CONSTITUTION:An SiO2 film 11 is provided on a monocrystalline Si10 surface and a polycrystalline or amorphous Si film 12 is provided on the film 11. Then, first of all, laser beams scan on the film 12 while irradiating and heating the film 12. And the film 12 is converted into a monocrystalline Si film 12A existing crystal grain boundaries GB. Next, the film 12A is converted into an amorphous Si film 12B by implanting Si ions 14. After removing the crystal grain boundaries GB left on the surface by etching, heat treatment is applied in inert gas atmosphere or the like for monocrystallization. In this way, a monocrystalline film practically excluding crystal grain boundaries will be obtained and the film having a few junction leakage current at the time of device formation and superior characteristics such as life time or the like will be obtained.
JP15678979A 1979-12-05 1979-12-05 Formation of monocrystalline semiconductor Granted JPS5680126A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15678979A JPS5680126A (en) 1979-12-05 1979-12-05 Formation of monocrystalline semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15678979A JPS5680126A (en) 1979-12-05 1979-12-05 Formation of monocrystalline semiconductor

Publications (2)

Publication Number Publication Date
JPS5680126A true JPS5680126A (en) 1981-07-01
JPS6322056B2 JPS6322056B2 (en) 1988-05-10

Family

ID=15635334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15678979A Granted JPS5680126A (en) 1979-12-05 1979-12-05 Formation of monocrystalline semiconductor

Country Status (1)

Country Link
JP (1) JPS5680126A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5837913A (en) * 1981-08-28 1983-03-05 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
EP0077020A2 (en) * 1981-10-09 1983-04-20 Hitachi, Ltd. Method of manufacturing single-crystal film
JPS58175827A (en) * 1982-04-07 1983-10-15 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS61127118A (en) * 1984-11-26 1986-06-14 Sony Corp Method for forming semiconductor thin film
JPS61131413A (en) * 1984-11-30 1986-06-19 Sony Corp Formation of semiconductor thin film
EP0269349A2 (en) * 1986-11-26 1988-06-01 AT&T Corp. Method of making an article comprising a buried SiO2 layer
US5130261A (en) * 1989-09-11 1992-07-14 Kabushiki Kaisha Toshiba Method of rendering the impurity concentration of a semiconductor wafer uniform
JPH07231095A (en) * 1994-02-01 1995-08-29 Lg Semicon Co Ltd Manufacture of thin film transistor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0423046U (en) * 1990-06-15 1992-02-25

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5837913A (en) * 1981-08-28 1983-03-05 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
EP0077020A2 (en) * 1981-10-09 1983-04-20 Hitachi, Ltd. Method of manufacturing single-crystal film
JPS58175827A (en) * 1982-04-07 1983-10-15 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS61127118A (en) * 1984-11-26 1986-06-14 Sony Corp Method for forming semiconductor thin film
JPS61131413A (en) * 1984-11-30 1986-06-19 Sony Corp Formation of semiconductor thin film
EP0269349A2 (en) * 1986-11-26 1988-06-01 AT&T Corp. Method of making an article comprising a buried SiO2 layer
US5130261A (en) * 1989-09-11 1992-07-14 Kabushiki Kaisha Toshiba Method of rendering the impurity concentration of a semiconductor wafer uniform
JPH07231095A (en) * 1994-02-01 1995-08-29 Lg Semicon Co Ltd Manufacture of thin film transistor

Also Published As

Publication number Publication date
JPS6322056B2 (en) 1988-05-10

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