JPS6437561A - Pattern forming method - Google Patents

Pattern forming method

Info

Publication number
JPS6437561A
JPS6437561A JP19350787A JP19350787A JPS6437561A JP S6437561 A JPS6437561 A JP S6437561A JP 19350787 A JP19350787 A JP 19350787A JP 19350787 A JP19350787 A JP 19350787A JP S6437561 A JPS6437561 A JP S6437561A
Authority
JP
Japan
Prior art keywords
alignment mark
composition
plate
transferred
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19350787A
Other languages
Japanese (ja)
Inventor
Kunihiko Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP19350787A priority Critical patent/JPS6437561A/en
Publication of JPS6437561A publication Critical patent/JPS6437561A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To eliminate the need for alignment mark for negative mask except a division pattern for a negative mask by adapting a part of the division pattern of the negative mask to an alignment mark for composition and transferring the division pattern to a plate to be transferred. CONSTITUTION:The negative masks 18-21 where the division patterns 3-6 are respectively formed by dividing a desirable pattern into plural pieces and the mask 22 for an alignment where the alignment marks for composition 8, 10, 12 and 14 are formed are formed and then the plate to be transferred 30 providing the alignment mark for composition is formed. And resist is applied on the plate to be transferred providing the alignment mark for composition and some parts 3a-6a of the division patterns of the negative masks 18-21 are adapted to the alignment mark for composition. After transferring the division pattern by exposing them one by one through the negative mask, the plate to be transferred 30 providing the alignment mark for composition is developed and etched, from which plate the resist is exfoliated so as to form the desirable pattern. Thus, the alignment mark is not necessitated for the negative mask except the division pattern.
JP19350787A 1987-07-31 1987-07-31 Pattern forming method Pending JPS6437561A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19350787A JPS6437561A (en) 1987-07-31 1987-07-31 Pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19350787A JPS6437561A (en) 1987-07-31 1987-07-31 Pattern forming method

Publications (1)

Publication Number Publication Date
JPS6437561A true JPS6437561A (en) 1989-02-08

Family

ID=16309204

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19350787A Pending JPS6437561A (en) 1987-07-31 1987-07-31 Pattern forming method

Country Status (1)

Country Link
JP (1) JPS6437561A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009003074A (en) * 2007-06-20 2009-01-08 Mitsubishi Electric Corp Exposure method and manufacturing method of image sensor
JP2009238819A (en) * 2008-03-26 2009-10-15 Sony Corp Method of forming mask for lithography, method of forming mask data for lithography, method of manufacturing back-illuminated solid-state imaging device, back-illuminated solid-state imaging device and electronic device
JP2011232549A (en) * 2010-04-28 2011-11-17 Nec Corp Method for manufacturing semiconductor device
JP2021522540A (en) * 2018-04-26 2021-08-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Systems and methods using solid-emitter arrays

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009003074A (en) * 2007-06-20 2009-01-08 Mitsubishi Electric Corp Exposure method and manufacturing method of image sensor
JP2009238819A (en) * 2008-03-26 2009-10-15 Sony Corp Method of forming mask for lithography, method of forming mask data for lithography, method of manufacturing back-illuminated solid-state imaging device, back-illuminated solid-state imaging device and electronic device
JP2011232549A (en) * 2010-04-28 2011-11-17 Nec Corp Method for manufacturing semiconductor device
JP2021522540A (en) * 2018-04-26 2021-08-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Systems and methods using solid-emitter arrays

Similar Documents

Publication Publication Date Title
EP0152227A3 (en) The fabrication of microstructures over large areas using physical replication
JPS6437561A (en) Pattern forming method
JPS5339075A (en) Step and repeat exposure method of masks
JPS52139374A (en) Alignment pattern forming method for mask alignment
JPS6488546A (en) Method for exposing thick film resist
JPS5788451A (en) Photomask
JPS55135837A (en) Manufacture of photomask
JPS5651827A (en) Preparation of semiconductor device
JPS56137632A (en) Pattern forming
JPS51139267A (en) Photo-mask
JPS5215266A (en) Pattern printing unit
JPS56167329A (en) Piling joint setting mark to be used in fine processing exposure technology
JPS6422028A (en) Forming method for pattern
JPS53104173A (en) Master reticle for photo mask production
JPS51124380A (en) Photo mask
JPS5619051A (en) Production of photo mask
JPS5656633A (en) Manufacture of semiconductor element
JPS5365667A (en) Optical mask
JPS6444935A (en) Pattern forming method
JPS53144271A (en) Process system for mask alignment signal
JPS5652754A (en) Manufacture of mask for manufacturing semiconductor device
JPS568822A (en) Manufacture of semiconductor device
JPS5639543A (en) Manufacture of chromium mask
JPS5693320A (en) Method for pattern formation
JPS56109350A (en) Photomask