JPS6437561A - Pattern forming method - Google Patents
Pattern forming methodInfo
- Publication number
- JPS6437561A JPS6437561A JP19350787A JP19350787A JPS6437561A JP S6437561 A JPS6437561 A JP S6437561A JP 19350787 A JP19350787 A JP 19350787A JP 19350787 A JP19350787 A JP 19350787A JP S6437561 A JPS6437561 A JP S6437561A
- Authority
- JP
- Japan
- Prior art keywords
- alignment mark
- composition
- plate
- transferred
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
PURPOSE:To eliminate the need for alignment mark for negative mask except a division pattern for a negative mask by adapting a part of the division pattern of the negative mask to an alignment mark for composition and transferring the division pattern to a plate to be transferred. CONSTITUTION:The negative masks 18-21 where the division patterns 3-6 are respectively formed by dividing a desirable pattern into plural pieces and the mask 22 for an alignment where the alignment marks for composition 8, 10, 12 and 14 are formed are formed and then the plate to be transferred 30 providing the alignment mark for composition is formed. And resist is applied on the plate to be transferred providing the alignment mark for composition and some parts 3a-6a of the division patterns of the negative masks 18-21 are adapted to the alignment mark for composition. After transferring the division pattern by exposing them one by one through the negative mask, the plate to be transferred 30 providing the alignment mark for composition is developed and etched, from which plate the resist is exfoliated so as to form the desirable pattern. Thus, the alignment mark is not necessitated for the negative mask except the division pattern.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19350787A JPS6437561A (en) | 1987-07-31 | 1987-07-31 | Pattern forming method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19350787A JPS6437561A (en) | 1987-07-31 | 1987-07-31 | Pattern forming method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6437561A true JPS6437561A (en) | 1989-02-08 |
Family
ID=16309204
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19350787A Pending JPS6437561A (en) | 1987-07-31 | 1987-07-31 | Pattern forming method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6437561A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009003074A (en) * | 2007-06-20 | 2009-01-08 | Mitsubishi Electric Corp | Exposure method and manufacturing method of image sensor |
JP2009238819A (en) * | 2008-03-26 | 2009-10-15 | Sony Corp | Method of forming mask for lithography, method of forming mask data for lithography, method of manufacturing back-illuminated solid-state imaging device, back-illuminated solid-state imaging device and electronic device |
JP2011232549A (en) * | 2010-04-28 | 2011-11-17 | Nec Corp | Method for manufacturing semiconductor device |
JP2021522540A (en) * | 2018-04-26 | 2021-08-30 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Systems and methods using solid-emitter arrays |
-
1987
- 1987-07-31 JP JP19350787A patent/JPS6437561A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009003074A (en) * | 2007-06-20 | 2009-01-08 | Mitsubishi Electric Corp | Exposure method and manufacturing method of image sensor |
JP2009238819A (en) * | 2008-03-26 | 2009-10-15 | Sony Corp | Method of forming mask for lithography, method of forming mask data for lithography, method of manufacturing back-illuminated solid-state imaging device, back-illuminated solid-state imaging device and electronic device |
JP2011232549A (en) * | 2010-04-28 | 2011-11-17 | Nec Corp | Method for manufacturing semiconductor device |
JP2021522540A (en) * | 2018-04-26 | 2021-08-30 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Systems and methods using solid-emitter arrays |
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