JPS643096A - Method for forming crystal - Google Patents

Method for forming crystal

Info

Publication number
JPS643096A
JPS643096A JP6985988A JP6985988A JPS643096A JP S643096 A JPS643096 A JP S643096A JP 6985988 A JP6985988 A JP 6985988A JP 6985988 A JP6985988 A JP 6985988A JP S643096 A JPS643096 A JP S643096A
Authority
JP
Japan
Prior art keywords
substrate
single crystal
crystal
nucleus
nucleus forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6985988A
Other languages
Japanese (ja)
Other versions
JPH013096A (en
Inventor
Takao Yonehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP6985988A priority Critical patent/JPS643096A/en
Publication of JPH013096A publication Critical patent/JPH013096A/en
Publication of JPS643096A publication Critical patent/JPS643096A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To reduce production cost of crystal and improve quality thereof, by immersing a substrate having non-nucleus forming face and nucleus forming face into a solution containing a single crystal forming material and then growing the single crystal from only single nucleus.
CONSTITUTION: A crucible 34, etc., is arranged in a treating chamber 36 and a solution 35 containing a single crystal forming material is prepared in the crucible. A non-nucleus forming face 5 having small nucleus forming density is formed on a substrate 5 and a material having large nucleus forming density is thinly deposited thereon to form thin film 5. Then the substrate is subjected to patterning by lithography, etc., to sufficiently finely form a nucleus forming face 6 and give a substrate for crystal formation. The substrate is immersed into a solution 35 of the crucible and simultaneously heated and gradually cooled to provide the single crystal layer 8 through a single crystal particle 7. Production cost of the crystal is reduced, because there is no restriction in the material for ground substrate and quality of the crystal is improved, because single crystal formation is carried out in a liquid phase.
COPYRIGHT: (C)1989,JPO&Japio
JP6985988A 1987-03-27 1988-03-25 Method for forming crystal Pending JPS643096A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6985988A JPS643096A (en) 1987-03-27 1988-03-25 Method for forming crystal

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62-73605 1987-03-27
JP7360587 1987-03-27
JP6985988A JPS643096A (en) 1987-03-27 1988-03-25 Method for forming crystal

Publications (2)

Publication Number Publication Date
JPH013096A JPH013096A (en) 1989-01-06
JPS643096A true JPS643096A (en) 1989-01-06

Family

ID=26411037

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6985988A Pending JPS643096A (en) 1987-03-27 1988-03-25 Method for forming crystal

Country Status (1)

Country Link
JP (1) JPS643096A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5712199A (en) * 1990-10-16 1998-01-27 Canon Kabushiki Kaisha Method for making semiconductor body and photovoltaic device
JP2001044463A (en) * 1999-07-27 2001-02-16 Canon Inc Solar cell and manufacture thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5712199A (en) * 1990-10-16 1998-01-27 Canon Kabushiki Kaisha Method for making semiconductor body and photovoltaic device
JP2001044463A (en) * 1999-07-27 2001-02-16 Canon Inc Solar cell and manufacture thereof

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