JPS643096A - Method for forming crystal - Google Patents
Method for forming crystalInfo
- Publication number
- JPS643096A JPS643096A JP6985988A JP6985988A JPS643096A JP S643096 A JPS643096 A JP S643096A JP 6985988 A JP6985988 A JP 6985988A JP 6985988 A JP6985988 A JP 6985988A JP S643096 A JPS643096 A JP S643096A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- single crystal
- crystal
- nucleus
- nucleus forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To reduce production cost of crystal and improve quality thereof, by immersing a substrate having non-nucleus forming face and nucleus forming face into a solution containing a single crystal forming material and then growing the single crystal from only single nucleus.
CONSTITUTION: A crucible 34, etc., is arranged in a treating chamber 36 and a solution 35 containing a single crystal forming material is prepared in the crucible. A non-nucleus forming face 5 having small nucleus forming density is formed on a substrate 5 and a material having large nucleus forming density is thinly deposited thereon to form thin film 5. Then the substrate is subjected to patterning by lithography, etc., to sufficiently finely form a nucleus forming face 6 and give a substrate for crystal formation. The substrate is immersed into a solution 35 of the crucible and simultaneously heated and gradually cooled to provide the single crystal layer 8 through a single crystal particle 7. Production cost of the crystal is reduced, because there is no restriction in the material for ground substrate and quality of the crystal is improved, because single crystal formation is carried out in a liquid phase.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6985988A JPS643096A (en) | 1987-03-27 | 1988-03-25 | Method for forming crystal |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-73605 | 1987-03-27 | ||
JP7360587 | 1987-03-27 | ||
JP6985988A JPS643096A (en) | 1987-03-27 | 1988-03-25 | Method for forming crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH013096A JPH013096A (en) | 1989-01-06 |
JPS643096A true JPS643096A (en) | 1989-01-06 |
Family
ID=26411037
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6985988A Pending JPS643096A (en) | 1987-03-27 | 1988-03-25 | Method for forming crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS643096A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5712199A (en) * | 1990-10-16 | 1998-01-27 | Canon Kabushiki Kaisha | Method for making semiconductor body and photovoltaic device |
JP2001044463A (en) * | 1999-07-27 | 2001-02-16 | Canon Inc | Solar cell and manufacture thereof |
-
1988
- 1988-03-25 JP JP6985988A patent/JPS643096A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5712199A (en) * | 1990-10-16 | 1998-01-27 | Canon Kabushiki Kaisha | Method for making semiconductor body and photovoltaic device |
JP2001044463A (en) * | 1999-07-27 | 2001-02-16 | Canon Inc | Solar cell and manufacture thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0191505A3 (en) | Method of producing sheets of crystalline material | |
JPS643096A (en) | Method for forming crystal | |
EP0276960A3 (en) | Process for producing crystal article | |
JPS53108389A (en) | Manufacture for semiconductor device | |
JPS56114897A (en) | Method for liquid-phase epitaxial growth | |
EP0284434A3 (en) | Method of forming crystals | |
JPS5380965A (en) | Liquid-phase growth method | |
JPS5218322A (en) | Method for producing electrode for recording | |
JPS52117062A (en) | Liquid phase epitaxial growth process | |
JPS5645827A (en) | Forming method for transparent ferroelectric thin film | |
JPS53125276A (en) | Liquid phase epitaxial growth apparatus | |
JPS62277147A (en) | Production of thin film | |
JPS64723A (en) | Iii-v compound crystal article and forming method thereof | |
JPS56134598A (en) | Preparation of silicon carbide crystal | |
JPS544567A (en) | Growing apparatus of ion beam crystal | |
JPS5518095A (en) | Cilindrical magnetic domain element | |
JPS55140792A (en) | Manufacture of 3-5 group compound semiconductor single crystal | |
JPS55100295A (en) | Production of single crystal thin film | |
JPS5796519A (en) | Manufacture of semiconductor device | |
JPS5712423A (en) | Production of magnetic recorder | |
JPS52149475A (en) | Liquid grown wafer and its production | |
JPS5358978A (en) | Growing method for crystal | |
JPS5234754A (en) | Process for the orientation of a liquid crystal | |
JPS5764913A (en) | Manufacture of magnetic bubble memory elemebt | |
JPS55108990A (en) | Production of magnetic bubble material |