JPS6426139A - Production of moisture sensitive element - Google Patents

Production of moisture sensitive element

Info

Publication number
JPS6426139A
JPS6426139A JP18289387A JP18289387A JPS6426139A JP S6426139 A JPS6426139 A JP S6426139A JP 18289387 A JP18289387 A JP 18289387A JP 18289387 A JP18289387 A JP 18289387A JP S6426139 A JPS6426139 A JP S6426139A
Authority
JP
Japan
Prior art keywords
porous silicon
oxidation treatment
film
subjected
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18289387A
Other languages
Japanese (ja)
Other versions
JP2559682B2 (en
Inventor
Kouichi Yagihashi
Kazuyuki Terao
Tomoyasu Nakano
Akira Kinoshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toko Inc
Original Assignee
Toko Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toko Inc filed Critical Toko Inc
Priority to JP62182893A priority Critical patent/JP2559682B2/en
Publication of JPS6426139A publication Critical patent/JPS6426139A/en
Application granted granted Critical
Publication of JP2559682B2 publication Critical patent/JP2559682B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

PURPOSE:To obtain a moisture sensitive element which is greatly improved in the characteristic of a change in the resistance value of the element and has a good sensitivity by oxidizing a porous silicon layer. CONSTITUTION:Single crystal silicon is subjected to an anodic oxidation treatment in a hydrogen fluoride soln. to form the porous silicon layer 11 to about 5-40mu on one surface of a single crystal silicon substrate 10. The porous silicon film is subjected to an oxidation treatment by a thermal or chemical method. The thermal oxidation treatment includes a method of heating and oxidizing the film at 200-350 deg.C in a thermal oxidation furnace and the chemical oxidation treatment includes a method of immersing the film in a 30% dilute soln. of nitric acid. Finally, electrodes 12, 13 are respectively formed on the upper side of the porous silicon layer and the rear face of the substrate and terminals are connected thereto. The porous silicon is subjected to the oxidation treatment in order to intensity and stabilize the film quality, since the porous silicon is an active material which is different in film properties from the substrate and is liable to crack and exfoliate.
JP62182893A 1987-07-22 1987-07-22 Method for manufacturing moisture sensitive element Expired - Fee Related JP2559682B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62182893A JP2559682B2 (en) 1987-07-22 1987-07-22 Method for manufacturing moisture sensitive element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62182893A JP2559682B2 (en) 1987-07-22 1987-07-22 Method for manufacturing moisture sensitive element

Publications (2)

Publication Number Publication Date
JPS6426139A true JPS6426139A (en) 1989-01-27
JP2559682B2 JP2559682B2 (en) 1996-12-04

Family

ID=16126236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62182893A Expired - Fee Related JP2559682B2 (en) 1987-07-22 1987-07-22 Method for manufacturing moisture sensitive element

Country Status (1)

Country Link
JP (1) JP2559682B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6573815B1 (en) 1999-12-02 2003-06-03 Mitsubishi Denki Kabushiki Kaisha Circuit breaker

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6573815B1 (en) 1999-12-02 2003-06-03 Mitsubishi Denki Kabushiki Kaisha Circuit breaker

Also Published As

Publication number Publication date
JP2559682B2 (en) 1996-12-04

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees