JPS6425535A - Treatment of substrate for forming resist film - Google Patents
Treatment of substrate for forming resist filmInfo
- Publication number
- JPS6425535A JPS6425535A JP18258287A JP18258287A JPS6425535A JP S6425535 A JPS6425535 A JP S6425535A JP 18258287 A JP18258287 A JP 18258287A JP 18258287 A JP18258287 A JP 18258287A JP S6425535 A JPS6425535 A JP S6425535A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- adhesion reinforcing
- inactive gas
- reinforcing agent
- resist film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To increase the adhesion strength of a resist film to the surface of a substrate, by evaporating an adhesion reinforcing agent in inactive gas, and exposing the substrate in the evaporated atmosphere. CONSTITUTION:Silicon substrates 12 to be treated are aligned in a cassette in a treating box 11. Inactive gas is measured with a flowmeter 14 and supplied through a pipe 13 at the lower part of the box. An adhesion reinforcing agent 15 is arranged in a dish-shaped container 16. In this treating apparatus, the inactive gas is applied on the adhesion reinforcing agent, and the agent is vaporized. The vapor is applied on the silicon substrate and made to react with an OH group on the surface of the substrate. Thus adhesion reinforcing treatment is performed. When the substrate, in which a thermal oxide film is formed on the silicon surface, is used, it is desirable to use hexamethyldisilazane for the adhesion reinforcing agent and to use N2 for the inactive gas.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62182582A JPH0793254B2 (en) | 1987-07-22 | 1987-07-22 | Method for treating substrate for forming resist film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62182582A JPH0793254B2 (en) | 1987-07-22 | 1987-07-22 | Method for treating substrate for forming resist film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6425535A true JPS6425535A (en) | 1989-01-27 |
JPH0793254B2 JPH0793254B2 (en) | 1995-10-09 |
Family
ID=16120804
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62182582A Expired - Lifetime JPH0793254B2 (en) | 1987-07-22 | 1987-07-22 | Method for treating substrate for forming resist film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0793254B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5304398A (en) * | 1993-06-03 | 1994-04-19 | Watkins Johnson Company | Chemical vapor deposition of silicon dioxide using hexamethyldisilazane |
JP2016106274A (en) * | 2003-06-13 | 2016-06-16 | 株式会社ニコン | Substrate stage |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52144972A (en) * | 1976-05-28 | 1977-12-02 | Hitachi Ltd | Formation method of photo resist film |
JPS5685825A (en) * | 1979-12-17 | 1981-07-13 | Nec Corp | Thin film coating device of semiconductor wafer |
JPS575333A (en) * | 1980-06-13 | 1982-01-12 | Nec Kyushu Ltd | Organic treating apparatus for semiconductor substrate |
JPS5731151A (en) * | 1980-08-04 | 1982-02-19 | Toshiba Corp | Automatic continuous treating device for semiconductor substrate |
JPS5753933A (en) * | 1980-09-18 | 1982-03-31 | Toshiba Corp | Manufacture of semiconductor element |
JPS5885337U (en) * | 1981-12-03 | 1983-06-09 | 九州日本電気株式会社 | Organic processing equipment for semiconductor substrates |
JPS58172669A (en) * | 1982-04-01 | 1983-10-11 | Kinoshita Kenkyusho:Kk | Device for fixing powder image with solvent |
JPS58190027A (en) * | 1982-04-30 | 1983-11-05 | Nec Kyushu Ltd | Semiconductor substrate organic processing apparatus |
-
1987
- 1987-07-22 JP JP62182582A patent/JPH0793254B2/en not_active Expired - Lifetime
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52144972A (en) * | 1976-05-28 | 1977-12-02 | Hitachi Ltd | Formation method of photo resist film |
JPS5685825A (en) * | 1979-12-17 | 1981-07-13 | Nec Corp | Thin film coating device of semiconductor wafer |
JPS575333A (en) * | 1980-06-13 | 1982-01-12 | Nec Kyushu Ltd | Organic treating apparatus for semiconductor substrate |
JPS5731151A (en) * | 1980-08-04 | 1982-02-19 | Toshiba Corp | Automatic continuous treating device for semiconductor substrate |
JPS5753933A (en) * | 1980-09-18 | 1982-03-31 | Toshiba Corp | Manufacture of semiconductor element |
JPS5885337U (en) * | 1981-12-03 | 1983-06-09 | 九州日本電気株式会社 | Organic processing equipment for semiconductor substrates |
JPS58172669A (en) * | 1982-04-01 | 1983-10-11 | Kinoshita Kenkyusho:Kk | Device for fixing powder image with solvent |
JPS58190027A (en) * | 1982-04-30 | 1983-11-05 | Nec Kyushu Ltd | Semiconductor substrate organic processing apparatus |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5304398A (en) * | 1993-06-03 | 1994-04-19 | Watkins Johnson Company | Chemical vapor deposition of silicon dioxide using hexamethyldisilazane |
JP2016106274A (en) * | 2003-06-13 | 2016-06-16 | 株式会社ニコン | Substrate stage |
Also Published As
Publication number | Publication date |
---|---|
JPH0793254B2 (en) | 1995-10-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |