JPS6425535A - Treatment of substrate for forming resist film - Google Patents

Treatment of substrate for forming resist film

Info

Publication number
JPS6425535A
JPS6425535A JP18258287A JP18258287A JPS6425535A JP S6425535 A JPS6425535 A JP S6425535A JP 18258287 A JP18258287 A JP 18258287A JP 18258287 A JP18258287 A JP 18258287A JP S6425535 A JPS6425535 A JP S6425535A
Authority
JP
Japan
Prior art keywords
substrate
adhesion reinforcing
inactive gas
reinforcing agent
resist film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18258287A
Other languages
Japanese (ja)
Other versions
JPH0793254B2 (en
Inventor
Masakazu Akiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP62182582A priority Critical patent/JPH0793254B2/en
Publication of JPS6425535A publication Critical patent/JPS6425535A/en
Publication of JPH0793254B2 publication Critical patent/JPH0793254B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To increase the adhesion strength of a resist film to the surface of a substrate, by evaporating an adhesion reinforcing agent in inactive gas, and exposing the substrate in the evaporated atmosphere. CONSTITUTION:Silicon substrates 12 to be treated are aligned in a cassette in a treating box 11. Inactive gas is measured with a flowmeter 14 and supplied through a pipe 13 at the lower part of the box. An adhesion reinforcing agent 15 is arranged in a dish-shaped container 16. In this treating apparatus, the inactive gas is applied on the adhesion reinforcing agent, and the agent is vaporized. The vapor is applied on the silicon substrate and made to react with an OH group on the surface of the substrate. Thus adhesion reinforcing treatment is performed. When the substrate, in which a thermal oxide film is formed on the silicon surface, is used, it is desirable to use hexamethyldisilazane for the adhesion reinforcing agent and to use N2 for the inactive gas.
JP62182582A 1987-07-22 1987-07-22 Method for treating substrate for forming resist film Expired - Lifetime JPH0793254B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62182582A JPH0793254B2 (en) 1987-07-22 1987-07-22 Method for treating substrate for forming resist film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62182582A JPH0793254B2 (en) 1987-07-22 1987-07-22 Method for treating substrate for forming resist film

Publications (2)

Publication Number Publication Date
JPS6425535A true JPS6425535A (en) 1989-01-27
JPH0793254B2 JPH0793254B2 (en) 1995-10-09

Family

ID=16120804

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62182582A Expired - Lifetime JPH0793254B2 (en) 1987-07-22 1987-07-22 Method for treating substrate for forming resist film

Country Status (1)

Country Link
JP (1) JPH0793254B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5304398A (en) * 1993-06-03 1994-04-19 Watkins Johnson Company Chemical vapor deposition of silicon dioxide using hexamethyldisilazane
JP2016106274A (en) * 2003-06-13 2016-06-16 株式会社ニコン Substrate stage

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52144972A (en) * 1976-05-28 1977-12-02 Hitachi Ltd Formation method of photo resist film
JPS5685825A (en) * 1979-12-17 1981-07-13 Nec Corp Thin film coating device of semiconductor wafer
JPS575333A (en) * 1980-06-13 1982-01-12 Nec Kyushu Ltd Organic treating apparatus for semiconductor substrate
JPS5731151A (en) * 1980-08-04 1982-02-19 Toshiba Corp Automatic continuous treating device for semiconductor substrate
JPS5753933A (en) * 1980-09-18 1982-03-31 Toshiba Corp Manufacture of semiconductor element
JPS5885337U (en) * 1981-12-03 1983-06-09 九州日本電気株式会社 Organic processing equipment for semiconductor substrates
JPS58172669A (en) * 1982-04-01 1983-10-11 Kinoshita Kenkyusho:Kk Device for fixing powder image with solvent
JPS58190027A (en) * 1982-04-30 1983-11-05 Nec Kyushu Ltd Semiconductor substrate organic processing apparatus

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52144972A (en) * 1976-05-28 1977-12-02 Hitachi Ltd Formation method of photo resist film
JPS5685825A (en) * 1979-12-17 1981-07-13 Nec Corp Thin film coating device of semiconductor wafer
JPS575333A (en) * 1980-06-13 1982-01-12 Nec Kyushu Ltd Organic treating apparatus for semiconductor substrate
JPS5731151A (en) * 1980-08-04 1982-02-19 Toshiba Corp Automatic continuous treating device for semiconductor substrate
JPS5753933A (en) * 1980-09-18 1982-03-31 Toshiba Corp Manufacture of semiconductor element
JPS5885337U (en) * 1981-12-03 1983-06-09 九州日本電気株式会社 Organic processing equipment for semiconductor substrates
JPS58172669A (en) * 1982-04-01 1983-10-11 Kinoshita Kenkyusho:Kk Device for fixing powder image with solvent
JPS58190027A (en) * 1982-04-30 1983-11-05 Nec Kyushu Ltd Semiconductor substrate organic processing apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5304398A (en) * 1993-06-03 1994-04-19 Watkins Johnson Company Chemical vapor deposition of silicon dioxide using hexamethyldisilazane
JP2016106274A (en) * 2003-06-13 2016-06-16 株式会社ニコン Substrate stage

Also Published As

Publication number Publication date
JPH0793254B2 (en) 1995-10-09

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term