JPH03184320A - Surface treating method - Google Patents
Surface treating methodInfo
- Publication number
- JPH03184320A JPH03184320A JP32321489A JP32321489A JPH03184320A JP H03184320 A JPH03184320 A JP H03184320A JP 32321489 A JP32321489 A JP 32321489A JP 32321489 A JP32321489 A JP 32321489A JP H03184320 A JPH03184320 A JP H03184320A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- hmds
- treated
- mixed
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000007789 gas Substances 0.000 claims abstract description 30
- 239000012159 carrier gas Substances 0.000 claims abstract description 29
- 230000008016 vaporization Effects 0.000 claims abstract description 29
- 238000009834 vaporization Methods 0.000 claims abstract description 26
- 239000007788 liquid Substances 0.000 claims abstract description 25
- 238000004381 surface treatment Methods 0.000 claims description 15
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 abstract description 56
- 239000004065 semiconductor Substances 0.000 abstract description 24
- 235000012431 wafers Nutrition 0.000 description 25
- 238000010438 heat treatment Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000008186 active pharmaceutical agent Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- OKWLCUWJPPORKE-UHFFFAOYSA-N 1,2,3,4,5-pentanitro-6-(2-nitrophenyl)sulfanylbenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1SC1=C([N+]([O-])=O)C([N+]([O-])=O)=C([N+]([O-])=O)C([N+]([O-])=O)=C1[N+]([O-])=O OKWLCUWJPPORKE-UHFFFAOYSA-N 0.000 description 1
- 201000001320 Atherosclerosis Diseases 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は半導体ウェハの製造工程に関し、特に半導体ウ
ェハ表面処理方法に係る。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a semiconductor wafer manufacturing process, and particularly to a semiconductor wafer surface treatment method.
［従来の技術］
半導体ウェハ製造におけるホトレジスト処理工程は、ウ
ェハ上に積層されたＳｉＯ２等の薄膜上にレジスト塗布
し、所望のパターンに露光、現像して薄膜上にパターン
を形成している。通常、レジスト塗布前の半導体ウェハ
上の薄膜は大気中の水気を吸収し、表面に○Ｈ基が吸着
して親水性となっている。親水性表面に対してポジレジ
ストを塗布した場合、レジストの接着性が弱いため現像
処理中にレジストの剥離が生じることがある。[Prior Art] In a photoresist processing step in the manufacture of semiconductor wafers, a resist is applied onto a thin film of SiO2 or the like stacked on a wafer, exposed to light in a desired pattern, and developed to form a pattern on the thin film. Normally, a thin film on a semiconductor wafer before resist coating absorbs moisture from the atmosphere and becomes hydrophilic due to adsorption of ○H groups on the surface. When a positive resist is applied to a hydrophilic surface, the resist may peel off during the development process because the adhesiveness of the resist is weak.
このためレジストの接着性強化のためにＨＭＤＳ（ヘキ
サメチルジシラザン（ＣＨ，）、５ｉＮＨ８ｉ（ＣＨ３
）３） ）を用いてウェハ表面で以下の反応式に示す処
理により疎水性化処理（アトヒユージョン処理）が行わ
れている。Therefore, to strengthen the adhesion of the resist, HMDS (hexamethyldisilazane (CH,), 5iNH8i (CH3)
)3)) Hydrophobic treatment (atfusion treatment) is performed on the wafer surface by the treatment shown in the following reaction formula.
ＨＭＤＳの処理方法は通常薬液使用量の少ないＨＭＤＳ
ベーパにより、アトヒユージョン処理が施されている。HMDS treatment method usually uses HMDS with a small amount of chemical solution.
Atherosclerosis treatment is performed using vapor.
［発明が解決すべき課題］
ベーパ処理のＨＭＤＳ処理装置は第５図に示すように液
状のＨＭＤＳの収納容器１にＮ２ガスを供給し、Ｎ２ガ
スのバブルにより、液状ＨＭＤＳを気化させ密閉状の処
理装置２内に配置された半導体ウェハ３上に供給してい
る。しかし、この種の処理装置２では、ＨＭＤＳの供給
量、濃度等はＮ２ガスの供給量によりコントロールをし
ていたが十分広い濃度範囲でＨＭＤＳ発生濃度コントロ
ールができず、原理的に低濃度域に限定されていた。そ
のためウェハの薄膜上に供給されるＨＭＤＳは濃度が希
薄でしかも設定しうる濃度の範囲が狭く、半導体ウェハ
３の疎水処理条件が適正でないため、レジスト剥離が生
じたり、あるいは過剰のＨＭＤＳを供給して無駄になる
という欠点があった。[Problems to be Solved by the Invention] As shown in FIG. 5, the HMDS processing apparatus for vapor treatment supplies N2 gas to a storage container 1 for liquid HMDS, and vaporizes the liquid HMDS by bubbles of the N2 gas to form a sealed container. It is supplied onto a semiconductor wafer 3 placed in a processing apparatus 2. However, in this type of treatment equipment 2, although the supply amount and concentration of HMDS are controlled by the supply amount of N2 gas, it is not possible to control the HMDS generation concentration over a sufficiently wide concentration range, and in principle, it is not possible to control the HMDS generation concentration in a sufficiently wide concentration range. It was limited. Therefore, the concentration of HMDS supplied onto the thin film of the wafer is dilute and the range of concentrations that can be set is narrow, and the hydrophobic treatment conditions of the semiconductor wafer 3 are not appropriate, resulting in resist peeling or excessive HMDS being supplied. The disadvantage was that it was wasted.
本発明は上記の欠点を解消するためになされたものであ
って、半導体ウェハの表面処理を行うにあたり気化され
た処理液の適正濃度の気体を過不足なく被処理体上に供
給可能な表面処理方法を提供することを目的とする。The present invention has been made in order to eliminate the above-mentioned drawbacks, and is a surface treatment that can supply gas at an appropriate concentration of a vaporized processing liquid onto an object to be processed in the process of surface processing a semiconductor wafer. The purpose is to provide a method.
［課題を解決するための手段］
上記の目的を達成するため本発明の表面処理方法は、処
理液を気化し、該処理液の気体にキャリアガスを混合し
、該キャリアガス混合量により前記気体の流量及び濃度
を調整して被処理体を処理する。[Means for Solving the Problems] In order to achieve the above object, the surface treatment method of the present invention vaporizes a treatment liquid, mixes a carrier gas with the gas of the treatment liquid, and adjusts the amount of the gas by the mixed amount of the carrier gas. The object to be treated is treated by adjusting the flow rate and concentration of the substance.
さらに前記処理液の気化容器を加温して、前記気体の発
生速度を調整するものである。Furthermore, the vaporization container for the processing liquid is heated to adjust the generation rate of the gas.
［作用］
本発明の表面処理方法は、気化容器に処理液である液体
のＨＭＤＳを定量供給して発生させたＨＭＤＳペーパー
に流量をコントロールしたキャリアガスを流入し、これ
によりウェハの表面上に供給するＨＭＤＳの流量、濃度
をコントロールして表面処理を行う。さらに、液体のＨ
ＭＤＳの気化流量とキャリアガスの流量をコントロール
すると供にＨＭＤＳのキャリアガスの気化容器に加温手
段を設け、ＨＮＤＳの気化流量を精密にコントロールす
ることにより処理液の供給量、濃度の微調整を行うこと
が可能になる。[Operation] In the surface treatment method of the present invention, a carrier gas with a controlled flow rate is flowed into the HMDS paper generated by supplying a fixed amount of liquid HMDS as a treatment liquid to a vaporization container, thereby supplying it onto the surface of the wafer. Surface treatment is performed by controlling the flow rate and concentration of HMDS. Furthermore, liquid H
In addition to controlling the MDS vaporization flow rate and the carrier gas flow rate, a heating means is installed in the HMDS carrier gas vaporization container, and by precisely controlling the HNDS vaporization flow rate, the supply amount and concentration of the processing liquid can be finely adjusted. It becomes possible to do so.
［実施例コ
本発明の表面処理方法を半導体ウェハ製造のホトレジス
ト処理工程におけるレジスト接着強化処理装置に適用し
た一実施例を図面を参照して説明する。[Example 1] An example in which the surface treatment method of the present invention is applied to a resist adhesion strengthening treatment apparatus in a photoresist treatment process for manufacturing semiconductor wafers will be described with reference to the drawings.
第１図に図示のレジスト接着強化処理装置の表面処理装
置２０において、処理液である液体のＨＭＤＳの気化容
器１０に接続されたＨＭＤＳ供給系１１から液状のＨＭ
ＤＳが定量供給される。上気気化容器１０の加熱により
気化容器ｌｏ中の液体ＨＭＤＳの気化が促され配管工２
を通って処理部１３に導入される。配管１２にはキャリ
アガスＣの供給量を調整するバルブＶの開閉をコントロ
ールする調整手段を有するキャリアガス供給体１４から
キャリアガスＣが流入する流入口１５が設けられる。In the surface treatment apparatus 20 of the resist adhesion strengthening treatment apparatus shown in FIG.
A fixed amount of DS is supplied. The heating of the upper air vaporization container 10 promotes vaporization of the liquid HMDS in the vaporization container lo, and the plumber 2
It is introduced into the processing section 13 through the. The pipe 12 is provided with an inlet 15 through which the carrier gas C flows from a carrier gas supply body 14 having an adjusting means for controlling the opening and closing of a valve V that adjusts the amount of carrier gas C supplied.
さらに、配管１２に接続された処理部１３にはキャリア
ガスＣが混合された気体のＨＭＤＳが供給される。載置
台１６上には被処理体である半導体ウェハ３０が搬入載
置されており、この半導体ウェハ３０の表面全域上に気
体状ＨＭＤＳが均一に噴出されるよう半導体ウェハ３０
に対面して多数の孔１７が穿孔され、温度調節機構を備
えた拡散板１８が設けられる。また処理部１３は必要で
あれば減圧装置に接続される。Further, gaseous HMDS mixed with carrier gas C is supplied to the processing section 13 connected to the pipe 12. A semiconductor wafer 30, which is an object to be processed, is carried and placed on the mounting table 16, and the semiconductor wafer 30 is placed so that gaseous HMDS is uniformly ejected over the entire surface of the semiconductor wafer 30.
A large number of holes 17 are bored facing each other, and a diffusion plate 18 equipped with a temperature adjustment mechanism is provided. Further, the processing section 13 is connected to a pressure reducing device if necessary.
さらに、ＨＭＤＳ液の収納容器１０には、ＨＭＤＳ温度
を調整するようヒーター等の加温手段１９が具備される
。Further, the HMDS liquid storage container 10 is equipped with a heating means 19 such as a heater to adjust the HMDS temperature.
以上のような構成の表面処理袋Ｗ２０の作用を説明する
。The operation of the surface-treated bag W20 configured as above will be explained.
処理部１３の載置台１６上に図示しない搬送装置により
半導体ウェハ３０を搬入載置したのち、処理部１３を密
閉する。必要であれば減圧をかける。この減圧をかける
ことにより、低温で気化速度を増大させることができる
。すなわち、低温化をはかることができる。その後ＨＭ
ＤＳ供給系１１から所定量の液状のＨＭＤＳを気化容器
１ｏに供給し、液状ＨＭＤＳの気化を促す。ＨＭＤＳの
気化を促すためには加温手段１９を作動させて液状ＨＭ
ＤＳの気化温度に昇温させ、この温度によリＨＭＤＳの
気化速度を調整する。気化されたＨＭＤＳは例えば１分
間０．１−１０Ｑ量となって配管１２を通り、一方キャ
リアガス供給系１４からバルブＶを操作して所望のＨＭ
ＤＳの濃度になるようキャリアガス例えばＮ２ガスの供
給量をコントロールする。キャリアガスＣ例えば１分間
にＩＯＱの窒素Ｎ２ガスを流入口１５より配管１２に流
入させて、ＨＭＤＳの気体にＨＭＤＳ濃度調整のために
供給されたＮ２ガスを混合させ、この混合気体を処理部
１３に供給する。キャリアガスＣとしてはＨＭＤＳと反
応しないものならば何れのものでも使用でき、不活性ガ
スのＮ２ガス等が好適である。処理部１３において温度
調節機構により所望の温度（例えば２０℃）に調整され
た拡散板１８により載置台１６上の半導体ウェハ３０の
全面に気体が過不足なく行き亘り、ＨＭＤＳがベーパも
しくはミスト状液状となって半導体ウェハ３０上に噴霧
される。Ｈ’ＭＤＳの濃度及び流量はＨＭＤＳの気化流
量とキャリアガスＣの流量で微妙に調節することができ
、キャリアガスＣを多くするかまたはＨＭＤＳの気化流
量を小さくすることにより半導体ウェハ３０上に形成さ
れるＨＭＤＳ膜厚は薄くなり、キャリアガスＣを少くす
るかまたはＨＭＤＳの気化流量を大きくするとＨＭＤＳ
膜は厚くなる。従って、後工程のレジスト塗布された時
に第２図に示すように形成される水滴と半導体ウェハ３
０とのなす接触角θにより、表面処理状況が判断できる
。即ち、θが十分大きければ完全な疎水処理がなされて
いることが確認でき、レジスト膜と半導体ウェハとの接
着力のコントロールも可能となる。After the semiconductor wafer 30 is carried in and placed on the mounting table 16 of the processing section 13 by a transport device (not shown), the processing section 13 is sealed. Apply vacuum if necessary. By applying this reduced pressure, the rate of vaporization can be increased at low temperatures. In other words, the temperature can be lowered. Then H.M.
A predetermined amount of liquid HMDS is supplied from the DS supply system 11 to the vaporization container 1o to promote vaporization of the liquid HMDS. In order to promote the vaporization of HMDS, the heating means 19 is operated to heat the liquid HMDS.
The temperature is raised to the vaporization temperature of DS, and the vaporization rate of HMDS is adjusted by this temperature. The vaporized HMDS passes through the pipe 12 in an amount of, for example, 0.1-10Q per minute, while the desired HMDS is supplied by operating the valve V from the carrier gas supply system 14.
The supply amount of carrier gas, such as N2 gas, is controlled so that the concentration of DS is achieved. Carrier gas C For example, nitrogen N2 gas of IOQ per minute is flowed into the pipe 12 from the inlet 15 to mix the HMDS gas with the N2 gas supplied for adjusting the HMDS concentration, and this mixed gas is passed to the processing section 13. supply to. As the carrier gas C, any gas can be used as long as it does not react with HMDS, and an inert gas such as N2 gas is suitable. In the processing section 13, the diffusion plate 18, which is adjusted to a desired temperature (for example, 20° C.) by the temperature control mechanism, spreads the gas over the entire surface of the semiconductor wafer 30 on the mounting table 16 in just the right amount. and is sprayed onto the semiconductor wafer 30. The concentration and flow rate of H'MDS can be delicately adjusted by the vaporization flow rate of HMDS and the flow rate of carrier gas C, and by increasing the carrier gas C or decreasing the vaporization flow rate of HMDS, H'MDS can be formed on the semiconductor wafer 30. The thickness of the HMDS film becomes thinner, and if the carrier gas C is reduced or the HMDS vaporization flow rate is increased, the HMDS film becomes thinner.
The membrane becomes thicker. Therefore, water droplets and the semiconductor wafer 3 formed as shown in FIG. 2 when the resist is applied in the subsequent process.
The surface treatment status can be determined based on the contact angle θ with respect to 0. That is, if θ is sufficiently large, it can be confirmed that the hydrophobic treatment is complete, and it is also possible to control the adhesive force between the resist film and the semiconductor wafer.
また、第３図に示すＨＭＤＳの濃度とアトヒユージョン
処理所要時間の関係からＨＭＤＳベーパの濃度が高いほ
ど処理時間を短縮することができるため、必要最小限の
処理時間でアトヒユージョン処理を終了することができ
る。Furthermore, from the relationship between the concentration of HMDS and the time required for atfusion processing shown in Figure 3, the higher the concentration of HMDS vapor, the shorter the processing time, so the atfusion processing can be completed in the minimum necessary processing time. can do.
次に、本発明の他の一実施例について説明する。Next, another embodiment of the present invention will be described.
第４図に示すように、ＨＭＤＳの気化容器１０Ａに接続
されたＨＭＤＳ供給系１１から液状のＨＭＤＳが定量供
給され上記気化容器で気化するように構成されている。As shown in FIG. 4, a fixed amount of liquid HMDS is supplied from an HMDS supply system 11 connected to an HMDS vaporization container 10A and vaporized in the vaporization container.
また、上記気化容器内１０Ａには配管３１が接続されて
おり、キャリアガスＣの供給量を調整するバルブＶの開
閉をコントロールするｔＡ整平手段有するキャリアガス
供給体１４からキャリアガスＣが上記気化容器１０Ａ内
に導入される。さらに、上記気化容器１０Ａの周囲には
加温手段１９が設けられている。そして、ＨＭＤＳの気
体とキャリアガスＣ例えば窒素Ｎ２ガスの混合気体が配
管３２を通って処理部（図示せず）に供給される。Further, a pipe 31 is connected to the inside of the vaporization container 10A, and the carrier gas C is supplied from the carrier gas supply body 14 having a flattening means for controlling the opening and closing of a valve V for adjusting the supply amount of the carrier gas C to the vaporization container. It is introduced into the container 10A. Further, a heating means 19 is provided around the vaporization container 10A. Then, a mixed gas of HMDS gas and a carrier gas C, for example, nitrogen N2 gas, is supplied to a processing section (not shown) through the pipe 32.
なお、この実施例の動作作用・効果等については第１図
に示す一実施例と同等であるためその説明は省略する。It should be noted that the operation, effects, etc. of this embodiment are the same as those of the embodiment shown in FIG. 1, so a description thereof will be omitted.
上記実施例では液状ＨＭＤＳの気化手段として蒸気圧温
度に設定した例について説明したが、超音波手段により
霧状化させてもよい。上記実施例では、ＨＭＤＳによる
アトヒユージョン処理工程に適用した例について説明し
たが、表面被処理体に気体状処理物による処理であれば
何れにも適用できる。In the above embodiment, an example was explained in which the vapor pressure temperature was set as the means for vaporizing liquid HMDS, but it may also be atomized by ultrasonic means. In the above embodiment, an example in which the present invention is applied to an atfusion treatment process using HMDS has been described, but the present invention can be applied to any treatment as long as the surface of the object to be treated is treated with a gaseous treatment substance.
［発明の効果］
以上の説明からも明らかなように、本発明の表面処理方
法によれば、ＨＭＤＳの気化流量とキャリアガスの流量
を調整することによりＨＭＤＳ濃度の濃度の調整が可能
となる。従って、広範囲の濃度で均一なＨＭＤＳ処理を
行い、半導体ウェハ上に形成されるＨＭＤＳ膜厚をコン
トロールして半導体ウェハとレジストの接着力を調整す
ることができる。しかもアトヒユージョンに要する処理
時間も適正値に短縮することができるので時間的にも必
要最少限で処理を行うことができるため。[Effects of the Invention] As is clear from the above description, according to the surface treatment method of the present invention, the HMDS concentration can be adjusted by adjusting the vaporization flow rate of HMDS and the flow rate of the carrier gas. Therefore, it is possible to perform uniform HMDS treatment over a wide range of concentrations, control the thickness of the HMDS film formed on the semiconductor wafer, and adjust the adhesive force between the semiconductor wafer and the resist. Moreover, since the processing time required for atfusion can be shortened to an appropriate value, the processing can be performed in the minimum amount of time required.
半導体ウェハの高精度なパターン形成を短時間で行うこ
とができる。Highly accurate pattern formation on semiconductor wafers can be performed in a short time.
第１図は本発明の表面処理方法に係る一実施例を示す構
成図、第２図及び第３図は表面処理方法を説明する図、
第４図は本発明の他の一実施例の要部を示す構成図、第
５図は従来の表面処理方法に係る装置を示す図である。
１０・・・・・気化容器
２０・・・・・表面処理装置
３０・・・・・半導体ウェハ（被処理体）工４・・・・
・キャリアガス供給体
上９・・・・・加温手段
ＨＭＤＳ・・・・・・処理液FIG. 1 is a block diagram showing an embodiment of the surface treatment method of the present invention, FIGS. 2 and 3 are diagrams explaining the surface treatment method,
FIG. 4 is a block diagram showing a main part of another embodiment of the present invention, and FIG. 5 is a diagram showing an apparatus related to a conventional surface treatment method. 10... Vaporization container 20... Surface treatment device 30... Semiconductor wafer (object to be processed) processing 4...
・On carrier gas supply body 9... Heating means HMDS... Processing liquid
Claims (1)
混合し、該キャリアガス混合量により前記気体の流量及
び濃度を調整して被処理体を処理することを特徴とする
表面処理方法。 ２、前記処理液の気化容器を加温して、前記気体の発生
を調整することを特徴とする第１項記載の表面処理方法
。[Claims] 1. Processing the object by vaporizing the processing liquid, mixing a carrier gas with the gas of the processing liquid, and adjusting the flow rate and concentration of the gas according to the amount of the carrier gas mixed. Characteristic surface treatment method. 2. The surface treatment method according to item 1, characterized in that the vaporization container for the treatment liquid is heated to adjust the generation of the gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1323214A JP3011728B2 (en) | 1989-12-13 | 1989-12-13 | Surface treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1323214A JP3011728B2 (en) | 1989-12-13 | 1989-12-13 | Surface treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03184320A true JPH03184320A (en) | 1991-08-12 |
| JP3011728B2 JP3011728B2 (en) | 2000-02-21 |
Family
ID=18152311
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1323214A Expired - Fee Related JP3011728B2 (en) | 1989-12-13 | 1989-12-13 | Surface treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3011728B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5525551A (en) * | 1993-09-20 | 1996-06-11 | Fujitsu Limited | Method for forming insulating film in semiconductor device using a TEOS or HMDS pre-treatment |
| JP2005226048A (en) * | 2004-02-16 | 2005-08-25 | Hitachi Chem Co Ltd | Adhesive composition, film-formed adhesive and circuit-joining material by using the same, and joining structure of circuit member and method for producing the same |
| JP2009194246A (en) * | 2008-02-15 | 2009-08-27 | Tokyo Electron Ltd | Vaporizer, substrate processing apparatus, substrate processing method, and storage medium |
| JP2010258068A (en) * | 2009-04-22 | 2010-11-11 | Tokyo Electron Ltd | Liquid processing apparatus, and liquid processing method |
| JP2011044671A (en) * | 2009-08-24 | 2011-03-03 | Tokyo Electron Ltd | Hydrophobization treatment apparatus, hydrophobization treatment method, and storage medium |
| JP2012038868A (en) * | 2010-08-05 | 2012-02-23 | Tokyo Electron Ltd | Vaporizer, substrate processing apparatus, coating development apparatus and substrate processing method |
| JP2016066811A (en) * | 2008-06-16 | 2016-04-28 | 株式会社東芝 | Substrate processing apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62211643A (en) * | 1986-03-12 | 1987-09-17 | Mitsubishi Electric Corp | Coating method for adhesion intensifying agent |
-
1989
- 1989-12-13 JP JP1323214A patent/JP3011728B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62211643A (en) * | 1986-03-12 | 1987-09-17 | Mitsubishi Electric Corp | Coating method for adhesion intensifying agent |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5525551A (en) * | 1993-09-20 | 1996-06-11 | Fujitsu Limited | Method for forming insulating film in semiconductor device using a TEOS or HMDS pre-treatment |
| JP2005226048A (en) * | 2004-02-16 | 2005-08-25 | Hitachi Chem Co Ltd | Adhesive composition, film-formed adhesive and circuit-joining material by using the same, and joining structure of circuit member and method for producing the same |
| JP4655487B2 (en) * | 2004-02-16 | 2011-03-23 | 日立化成工業株式会社 | Adhesive composition, film-like adhesive and circuit connecting material using the same, circuit member connecting structure, and manufacturing method thereof |
| JP2009194246A (en) * | 2008-02-15 | 2009-08-27 | Tokyo Electron Ltd | Vaporizer, substrate processing apparatus, substrate processing method, and storage medium |
| JP2016066811A (en) * | 2008-06-16 | 2016-04-28 | 株式会社東芝 | Substrate processing apparatus |
| JP2010258068A (en) * | 2009-04-22 | 2010-11-11 | Tokyo Electron Ltd | Liquid processing apparatus, and liquid processing method |
| JP2011044671A (en) * | 2009-08-24 | 2011-03-03 | Tokyo Electron Ltd | Hydrophobization treatment apparatus, hydrophobization treatment method, and storage medium |
| KR20110020731A (en) * | 2009-08-24 | 2011-03-03 | 도쿄엘렉트론가부시키가이샤 | Hydrophobicizing apparatus, hydrophobicizing method and storage medium |
| US8430967B2 (en) | 2009-08-24 | 2013-04-30 | Tokyo Electron Limited | Hydrophobicizing apparatus, hydrophobicizing method and storage medium |
| TWI479536B (en) * | 2009-08-24 | 2015-04-01 | Tokyo Electron Ltd | Hydrophobic treatment device and hydrophobic treatment method |
| JP2012038868A (en) * | 2010-08-05 | 2012-02-23 | Tokyo Electron Ltd | Vaporizer, substrate processing apparatus, coating development apparatus and substrate processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3011728B2 (en) | 2000-02-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2906006B2 (en) | Processing method and apparatus | |
| JP3935983B2 (en) | Method and apparatus for coating substrate surface with polymer solution | |
| US20090207390A1 (en) | Adhesion promoting process, adhesion promoting device, coating and developing system and storage medium | |
| US6464948B2 (en) | Ozone processing apparatus for semiconductor processing system | |
| US4704348A (en) | Exposure of uniform fine pattern on photoresist | |
| CN108425100A (en) | The selective deposition of silica | |
| JPH0626206B2 (en) | Method and apparatus for removing film from substrate by vapor phase method | |
| TW201544619A (en) | High growth rate process for conformal aluminum nitride | |
| US20090325386A1 (en) | Process and System For Varying the Exposure to a Chemical Ambient in a Process Chamber | |
| US6117772A (en) | Method and apparatus for blanket aluminum CVD on spherical integrated circuits | |
| JP2001525251A (en) | Photoresist coating process controller with solvent vapor sensor | |
| JP2003523614A (en) | Method of depositing photoresist on a support | |
| JPH01107519A (en) | Vapor growth apparatus | |
| JPH03184320A (en) | Surface treating method | |
| US4842989A (en) | Resist layer and process for forming resist pattern thereon | |
| JPH04504442A (en) | Chemical vapor deposition reactor and how to use it | |
| JPH03170675A (en) | Chemical vapor growth method | |
| EP0370486A2 (en) | Method for high temperature reaction process | |
| JPH065505A (en) | Equipment for treatment before application of photoresist | |
| JPH1126443A (en) | Substrate-processing apparatus | |
| JP2829450B2 (en) | Processing equipment | |
| JPS6235264B2 (en) | ||
| JPH11214286A (en) | Apparatus for supplying vapor of adhesion reinforcing material for light-sensitive resin film, and pre-treatment of semiconductor wafer | |
| JPH08227848A (en) | Feeding method and device of processing gas | |
| JP4052506B2 (en) | Substrate processing equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |