JPS6421963A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6421963A
JPS6421963A JP17934487A JP17934487A JPS6421963A JP S6421963 A JPS6421963 A JP S6421963A JP 17934487 A JP17934487 A JP 17934487A JP 17934487 A JP17934487 A JP 17934487A JP S6421963 A JPS6421963 A JP S6421963A
Authority
JP
Japan
Prior art keywords
region
semiconductor layer
emitter
layer
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17934487A
Other languages
Japanese (ja)
Other versions
JPH07120665B2 (en
Inventor
Teruyuki Shimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP17934487A priority Critical patent/JPH07120665B2/en
Priority to US07/217,292 priority patent/US4967254A/en
Publication of JPS6421963A publication Critical patent/JPS6421963A/en
Priority to US07/573,698 priority patent/US5063167A/en
Publication of JPH07120665B2 publication Critical patent/JPH07120665B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To make the contraction of emitter size and the reduction of the homojunction capacity between emitter and base feasible for making a semiconductor device advantageous to be integration-circuited by a method wherein a part of undoped semiconductor layer and an emitter layer are held between the first implanted region and the second implanted region whereon electrodes and an emitter region are respectively formed. CONSTITUTION:A semiconductor layer 4 in the first conductivity type collector region, another semiconductor layer 3 in the second conductivity type base region formed on the layer 4, the other semiconductor layer 2 in the first conductivity type emitter region formed on the layer 3 and the other undoped semiconductor layer 1 formed on the layer 2 are provided. Furthermore, the second conductivity type the first implanted region 9 formed from said undoped semiconductor layer 1 to the semiconductor layer 3 in the base region holding a partial region, base electrodes 7 formed on the first implanted region 9 the first conductivity type the second implanted region 10 isolated from the region to be formed from the undoped semiconductor layer 1 held by the first implanted region 9 to the part reaching the semiconductor layer 3 in the base region and an emitter electrode 6 formed on the second implanted region 10 are provided.
JP17934487A 1987-07-16 1987-07-16 Semiconductor device Expired - Lifetime JPH07120665B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP17934487A JPH07120665B2 (en) 1987-07-16 1987-07-16 Semiconductor device
US07/217,292 US4967254A (en) 1987-07-16 1988-07-11 Semiconductor device
US07/573,698 US5063167A (en) 1987-07-16 1990-08-28 Method of producing a bipolar transistor with spacers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17934487A JPH07120665B2 (en) 1987-07-16 1987-07-16 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS6421963A true JPS6421963A (en) 1989-01-25
JPH07120665B2 JPH07120665B2 (en) 1995-12-20

Family

ID=16064199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17934487A Expired - Lifetime JPH07120665B2 (en) 1987-07-16 1987-07-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH07120665B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3019596U (en) * 1995-06-16 1995-12-19 木口 謙 Snap to attach without using thread

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3019596U (en) * 1995-06-16 1995-12-19 木口 謙 Snap to attach without using thread

Also Published As

Publication number Publication date
JPH07120665B2 (en) 1995-12-20

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