JPS6421962A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6421962A
JPS6421962A JP17934387A JP17934387A JPS6421962A JP S6421962 A JPS6421962 A JP S6421962A JP 17934387 A JP17934387 A JP 17934387A JP 17934387 A JP17934387 A JP 17934387A JP S6421962 A JPS6421962 A JP S6421962A
Authority
JP
Japan
Prior art keywords
region
semiconductor layer
undoped
emitter
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17934387A
Other languages
Japanese (ja)
Other versions
JPH07120664B2 (en
Inventor
Teruyuki Shimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62179343A priority Critical patent/JPH07120664B2/en
Priority to US07/217,292 priority patent/US4967254A/en
Publication of JPS6421962A publication Critical patent/JPS6421962A/en
Priority to US07/573,698 priority patent/US5063167A/en
Publication of JPH07120664B2 publication Critical patent/JPH07120664B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To make the contraction of emitter size and the reduction of the homojunction capacity between emitter and base feasible for making a semiconductor device advantageous to be integration-circuited by a method wherein an undoped semiconductor layer and an undoped emitter layer are held between the first implanted region and the second implanted region whereon base electrodes and an emitter electrode are respectively formed. CONSTITUTION:A semiconductor layer 4 in the first conductivity type collector region, another semiconductor layer 3 in the second conductivity type base region formed on the layer 4, the other semiconductor layer 2 in an undoped emitter region formed on the layer 3 and other undoped semiconductor layer 1 formed on the semiconductor layer 2 are provided. Furthermore, the second conductivity type the first implanted region 9 formed on the part from said undoped semiconductor layer 1 to the semiconductor layer 3 in the base region holding a partial region, base electrodes 7 formed on the first undoped region 9, the first conductivity type the second implanted region 10 isolated from the region 9 to be formed on the part from the undoped semiconductor layer 1 held by the first implanted region 9 to the part reaching the semiconductor layer 3 in the base region and an emitter electrode 6 formed on the second implanted region 10 are provided.
JP62179343A 1987-07-16 1987-07-16 Method for manufacturing semiconductor device Expired - Lifetime JPH07120664B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62179343A JPH07120664B2 (en) 1987-07-16 1987-07-16 Method for manufacturing semiconductor device
US07/217,292 US4967254A (en) 1987-07-16 1988-07-11 Semiconductor device
US07/573,698 US5063167A (en) 1987-07-16 1990-08-28 Method of producing a bipolar transistor with spacers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62179343A JPH07120664B2 (en) 1987-07-16 1987-07-16 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS6421962A true JPS6421962A (en) 1989-01-25
JPH07120664B2 JPH07120664B2 (en) 1995-12-20

Family

ID=16064181

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62179343A Expired - Lifetime JPH07120664B2 (en) 1987-07-16 1987-07-16 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPH07120664B2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61198770A (en) * 1985-02-28 1986-09-03 Sony Corp Manufacture of compound semiconductor device
JPS61276261A (en) * 1985-05-30 1986-12-06 Fujitsu Ltd Manufacture of high-speed bipolar transistor
JPS6246565A (en) * 1985-08-26 1987-02-28 Hitachi Denshi Ltd Manufacture of semiconductor device
JPS6265462A (en) * 1985-09-18 1987-03-24 Fujitsu Ltd Manufacture of hetero-junction bipolar semiconductor device
JPS6276555A (en) * 1985-06-28 1987-04-08 テキサス　インスツルメンツ　インコ−ポレイテツド Planar hetero junction bipolar device and manufacturing thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61198770A (en) * 1985-02-28 1986-09-03 Sony Corp Manufacture of compound semiconductor device
JPS61276261A (en) * 1985-05-30 1986-12-06 Fujitsu Ltd Manufacture of high-speed bipolar transistor
JPS6276555A (en) * 1985-06-28 1987-04-08 テキサス　インスツルメンツ　インコ−ポレイテツド Planar hetero junction bipolar device and manufacturing thereof
JPS6246565A (en) * 1985-08-26 1987-02-28 Hitachi Denshi Ltd Manufacture of semiconductor device
JPS6265462A (en) * 1985-09-18 1987-03-24 Fujitsu Ltd Manufacture of hetero-junction bipolar semiconductor device

Also Published As

Publication number Publication date
JPH07120664B2 (en) 1995-12-20

Similar Documents

Publication Publication Date Title
EP0494090A3 (en) Photovoltaic device
DE3787709D1 (en) Semiconductor arrangement with an electrode spot.
IT8223500A0 (en) PROCEDURE FOR MANUFACTURING RIBBED SUBSTRATES FOR FUEL BATTERY ELECTRODES AND OTHER ITEMS.
DE3780817D1 (en) SUN CELL WITH IMPROVED ELECTRICAL CONTACTS.
EP0297325A3 (en) Gate turn-off thyristor and manufacturing method thereof
EP0890994A3 (en) Power MOSFET and fabrication method
MY104983A (en) Vertical bipolar transistor.
EP0153043A3 (en) Ohmic contact layer
JPS6421963A (en) Semiconductor device
JPS57181161A (en) Transistor
JPS6421962A (en) Semiconductor device
EP0336102A3 (en) Secondary battery
JPS5417666A (en) Lead frame
JPS5249985A (en) Duplicate electrode
JPS57181160A (en) Transistor
JPS57188105A (en) Electret constituent
EP0077921A3 (en) Semiconductor device
JPS5661175A (en) Thin-film solar cell
JPS57206072A (en) Semiconductor device
JPS57196571A (en) Thyristor
JPS53146340A (en) Heating element
JPS6457665A (en) Heterojunction bipolar transistor
JPS5237766A (en) Semiconductor device
JPS6432671A (en) Semiconductor storage device
DE3381915D1 (en) BLEISAURE ELECTRICAL STORAGE CELL AND POSITIVE ELECTRODE DAFUER.