JPS6421936A - Inspection of semiconductor integrated circuit - Google Patents

Inspection of semiconductor integrated circuit

Info

Publication number
JPS6421936A
JPS6421936A JP62177312A JP17731287A JPS6421936A JP S6421936 A JPS6421936 A JP S6421936A JP 62177312 A JP62177312 A JP 62177312A JP 17731287 A JP17731287 A JP 17731287A JP S6421936 A JPS6421936 A JP S6421936A
Authority
JP
Japan
Prior art keywords
heat
resin layer
sensitive resin
semiconductor integrated
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62177312A
Other languages
Japanese (ja)
Inventor
Masahide Okino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP62177312A priority Critical patent/JPS6421936A/en
Publication of JPS6421936A publication Critical patent/JPS6421936A/en
Pending legal-status Critical Current

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

PURPOSE:To obtain a marking method, in which position adjustment is simple and ink is not used, by forming a heat sensitive resin layer on the surface of a semiconductor integrated circuit wafer, emitting heat rays from a heat ray emitter when the result of inspection is judged to be failure, and discoloring the heat sensitive resin layer. CONSTITUTION:A heat sensitive resin layer 8 is formed on the surface of a semiconductor integrated circuit wafer 1. A heat ray emitter 9 is provided in close proximity 5 / to the surface of the wafer 1. The electric characteristics of the semiconductor integrated circuit, which is formed on the wafer 1, are measured. When the failure is judged, heat rays are emitted from the heat ray emitter 9, and the heat sensitive resin layer 8 is discolored. The failure is recognized by the presence or absence of the discolored part. For example, an IC probe 2 of an IC tester is applied on the circuit of the semiconductor integrated circuit chip, on which the heat sensitive resin layer 8 is formed, and the electric characteristics of the circuit are measured with the IC tester. When the failure is recognized as a result of measurement, the heat rays are emitted from the heat ray emitter 9. Then, the part, on which the heat rays are projected, is discolored on the heat sensitive resin layer 8, and a mark 8a is formed. Thereafter, the wafer undergoes dicing. Then disqualified products are removed with the mark 8a as a reference.
JP62177312A 1987-07-17 1987-07-17 Inspection of semiconductor integrated circuit Pending JPS6421936A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62177312A JPS6421936A (en) 1987-07-17 1987-07-17 Inspection of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62177312A JPS6421936A (en) 1987-07-17 1987-07-17 Inspection of semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS6421936A true JPS6421936A (en) 1989-01-25

Family

ID=16028779

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62177312A Pending JPS6421936A (en) 1987-07-17 1987-07-17 Inspection of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS6421936A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030029483A (en) * 2001-10-03 2003-04-14 엔이씨 일렉트로닉스 코포레이션 Identification of IC chip based on information formed on high molecular film
CN111060530A (en) * 2019-12-25 2020-04-24 广东生益科技股份有限公司 Method for evaluating drilling quality of printed circuit board
CN116364573A (en) * 2023-05-24 2023-06-30 长鑫存储技术有限公司 Semiconductor structure testing method and die using same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030029483A (en) * 2001-10-03 2003-04-14 엔이씨 일렉트로닉스 코포레이션 Identification of IC chip based on information formed on high molecular film
CN111060530A (en) * 2019-12-25 2020-04-24 广东生益科技股份有限公司 Method for evaluating drilling quality of printed circuit board
CN111060530B (en) * 2019-12-25 2022-05-13 广东生益科技股份有限公司 Method for evaluating drilling quality of printed circuit board
CN116364573A (en) * 2023-05-24 2023-06-30 长鑫存储技术有限公司 Semiconductor structure testing method and die using same
CN116364573B (en) * 2023-05-24 2023-11-10 长鑫存储技术有限公司 Semiconductor structure testing method and die using same

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