JPS57191574A - Testing method for transistor - Google Patents

Testing method for transistor

Info

Publication number
JPS57191574A
JPS57191574A JP7694581A JP7694581A JPS57191574A JP S57191574 A JPS57191574 A JP S57191574A JP 7694581 A JP7694581 A JP 7694581A JP 7694581 A JP7694581 A JP 7694581A JP S57191574 A JPS57191574 A JP S57191574A
Authority
JP
Japan
Prior art keywords
temperature
base
veb
emitter
tested
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7694581A
Other languages
Japanese (ja)
Inventor
Sadanobu Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7694581A priority Critical patent/JPS57191574A/en
Publication of JPS57191574A publication Critical patent/JPS57191574A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2608—Circuits therefor for testing bipolar transistors
    • G01R31/2619—Circuits therefor for testing bipolar transistors for measuring thermal properties thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

PURPOSE:To know the junction temperature of a transistor (TR) to be tested easily and accurately during its intermittent operation test by measuring the emitter-base forward voltage and then using temperature characteristics of a calibrated emitter-base forward voltage for the test. CONSTITUTION:A backward bias from a collector power source 6 is applied between the collector 2 and base 3 of a common base TR1 to be tested, and a switch 5 is put in operation by an emitter power source 7 to apply a forward bias to the base 3 and emitter 4 intermittently. The VEB at the moment when the TR1 turns on is VEB1, and the VEB right before it turns off is VBE2; and the temperature coefficient of the VEB is alpha, and the VEB when Tj=20 deg.C is VEB0, obtaining the maximum temperature Tjmax and minimum temperature Tjmin of the junction and variation DELTATj in junction temperature as shown by equations. Consequently, the junction temperature of the TR to be tested during its intermittent operation test is known easily and accurately.
JP7694581A 1981-05-21 1981-05-21 Testing method for transistor Pending JPS57191574A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7694581A JPS57191574A (en) 1981-05-21 1981-05-21 Testing method for transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7694581A JPS57191574A (en) 1981-05-21 1981-05-21 Testing method for transistor

Publications (1)

Publication Number Publication Date
JPS57191574A true JPS57191574A (en) 1982-11-25

Family

ID=13619882

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7694581A Pending JPS57191574A (en) 1981-05-21 1981-05-21 Testing method for transistor

Country Status (1)

Country Link
JP (1) JPS57191574A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013142704A (en) * 2012-01-11 2013-07-22 Abb Research Ltd System and method for monitoring operation state of igbt device in real time
JP2014002092A (en) * 2012-06-20 2014-01-09 Fuji Electric Co Ltd Semiconductor testing device and semiconductor test method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013142704A (en) * 2012-01-11 2013-07-22 Abb Research Ltd System and method for monitoring operation state of igbt device in real time
JP2014002092A (en) * 2012-06-20 2014-01-09 Fuji Electric Co Ltd Semiconductor testing device and semiconductor test method

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