JPS6421080A - Plasma cvd device - Google Patents
Plasma cvd deviceInfo
- Publication number
- JPS6421080A JPS6421080A JP17933087A JP17933087A JPS6421080A JP S6421080 A JPS6421080 A JP S6421080A JP 17933087 A JP17933087 A JP 17933087A JP 17933087 A JP17933087 A JP 17933087A JP S6421080 A JPS6421080 A JP S6421080A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- evacuating
- plasma cvd
- plasma
- cvd device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To increase the rate of film formation on the surface of a sample by arranging plural exhaust pumps for evacuating a sample chamber so as to allow gas to flow symmetrically on the sample as well as to increase the evacuating capacity. CONSTITUTION:Plasma is generated by excitation by electron cyclotron resonance with microwaves and a film is formed on a sample S in the sample chamber 3 of a plasma CVD device with the plasma. Plural exhaust pumps 3p for evacuating the chamber 3 are arranged in the device so as to allow gas to flow symmetrically on the sample S.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17933087A JPS6421080A (en) | 1987-07-17 | 1987-07-17 | Plasma cvd device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17933087A JPS6421080A (en) | 1987-07-17 | 1987-07-17 | Plasma cvd device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6421080A true JPS6421080A (en) | 1989-01-24 |
Family
ID=16063953
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17933087A Pending JPS6421080A (en) | 1987-07-17 | 1987-07-17 | Plasma cvd device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6421080A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04263527A (en) * | 1991-02-18 | 1992-09-18 | Mitsubishi Electric Corp | Voice decoding device |
JPH051220U (en) * | 1991-06-18 | 1993-01-08 | 古河電気工業株式会社 | Vapor phase growth equipment |
US5496410A (en) * | 1992-03-10 | 1996-03-05 | Hitachi, Ltd. | Plasma processing apparatus and method of processing substrates by using same apparatus |
US6893506B2 (en) * | 2002-03-11 | 2005-05-17 | Micron Technology, Inc. | Atomic layer deposition apparatus and method |
-
1987
- 1987-07-17 JP JP17933087A patent/JPS6421080A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04263527A (en) * | 1991-02-18 | 1992-09-18 | Mitsubishi Electric Corp | Voice decoding device |
JPH051220U (en) * | 1991-06-18 | 1993-01-08 | 古河電気工業株式会社 | Vapor phase growth equipment |
US5496410A (en) * | 1992-03-10 | 1996-03-05 | Hitachi, Ltd. | Plasma processing apparatus and method of processing substrates by using same apparatus |
US6893506B2 (en) * | 2002-03-11 | 2005-05-17 | Micron Technology, Inc. | Atomic layer deposition apparatus and method |
US7030037B2 (en) | 2002-03-11 | 2006-04-18 | Micron Technology, Inc. | Atomic layer deposition apparatus and method |
US7431773B2 (en) | 2002-03-11 | 2008-10-07 | Micron Technology, Inc. | Atomic layer deposition apparatus and method |
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