JPS6421080A - Plasma cvd device - Google Patents

Plasma cvd device

Info

Publication number
JPS6421080A
JPS6421080A JP17933087A JP17933087A JPS6421080A JP S6421080 A JPS6421080 A JP S6421080A JP 17933087 A JP17933087 A JP 17933087A JP 17933087 A JP17933087 A JP 17933087A JP S6421080 A JPS6421080 A JP S6421080A
Authority
JP
Japan
Prior art keywords
sample
evacuating
plasma cvd
plasma
cvd device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17933087A
Other languages
Japanese (ja)
Inventor
Yoichi Ueda
Tei Oonita
Toshikazu Takigawa
Shinji Tano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Sumitomo Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Industries Ltd filed Critical Sumitomo Metal Industries Ltd
Priority to JP17933087A priority Critical patent/JPS6421080A/en
Publication of JPS6421080A publication Critical patent/JPS6421080A/en
Pending legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To increase the rate of film formation on the surface of a sample by arranging plural exhaust pumps for evacuating a sample chamber so as to allow gas to flow symmetrically on the sample as well as to increase the evacuating capacity. CONSTITUTION:Plasma is generated by excitation by electron cyclotron resonance with microwaves and a film is formed on a sample S in the sample chamber 3 of a plasma CVD device with the plasma. Plural exhaust pumps 3p for evacuating the chamber 3 are arranged in the device so as to allow gas to flow symmetrically on the sample S.
JP17933087A 1987-07-17 1987-07-17 Plasma cvd device Pending JPS6421080A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17933087A JPS6421080A (en) 1987-07-17 1987-07-17 Plasma cvd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17933087A JPS6421080A (en) 1987-07-17 1987-07-17 Plasma cvd device

Publications (1)

Publication Number Publication Date
JPS6421080A true JPS6421080A (en) 1989-01-24

Family

ID=16063953

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17933087A Pending JPS6421080A (en) 1987-07-17 1987-07-17 Plasma cvd device

Country Status (1)

Country Link
JP (1) JPS6421080A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04263527A (en) * 1991-02-18 1992-09-18 Mitsubishi Electric Corp Voice decoding device
JPH051220U (en) * 1991-06-18 1993-01-08 古河電気工業株式会社 Vapor phase growth equipment
US5496410A (en) * 1992-03-10 1996-03-05 Hitachi, Ltd. Plasma processing apparatus and method of processing substrates by using same apparatus
US6893506B2 (en) * 2002-03-11 2005-05-17 Micron Technology, Inc. Atomic layer deposition apparatus and method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04263527A (en) * 1991-02-18 1992-09-18 Mitsubishi Electric Corp Voice decoding device
JPH051220U (en) * 1991-06-18 1993-01-08 古河電気工業株式会社 Vapor phase growth equipment
US5496410A (en) * 1992-03-10 1996-03-05 Hitachi, Ltd. Plasma processing apparatus and method of processing substrates by using same apparatus
US6893506B2 (en) * 2002-03-11 2005-05-17 Micron Technology, Inc. Atomic layer deposition apparatus and method
US7030037B2 (en) 2002-03-11 2006-04-18 Micron Technology, Inc. Atomic layer deposition apparatus and method
US7431773B2 (en) 2002-03-11 2008-10-07 Micron Technology, Inc. Atomic layer deposition apparatus and method

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