JPS6489518A - Parallel flat board electrode type plasma etching device - Google Patents

Parallel flat board electrode type plasma etching device

Info

Publication number
JPS6489518A
JPS6489518A JP24831787A JP24831787A JPS6489518A JP S6489518 A JPS6489518 A JP S6489518A JP 24831787 A JP24831787 A JP 24831787A JP 24831787 A JP24831787 A JP 24831787A JP S6489518 A JPS6489518 A JP S6489518A
Authority
JP
Japan
Prior art keywords
carbon
lower electrode
flat board
plasma etching
electrode type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24831787A
Other languages
Japanese (ja)
Inventor
Seiji Sagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP24831787A priority Critical patent/JPS6489518A/en
Publication of JPS6489518A publication Critical patent/JPS6489518A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To allow little polymerization to occur and to minimize charging up of electron by covering with carbon at least a surface facing flat electrodes other than a sample depositing section. CONSTITUTION:An upper electrode 1 and a lower electrode 2, both of which are made of stainless steel, are formed in a chamber 10, the lower electrode 2 being connected to an RF power supply 4. The surfaces facing the upper and lower electrodes, respectively, are covered with carbon 3 except for an area where a silicon substrate of the lower electrode 2 is to be mounted. An etching gas 5 to be supplied is made to be exhausted from an exhaust outlet 6. When etching the silicon substrate 7 using an etching gas containing halogen, excessive halogen is transformed into carbon and low molecular halogen carbide, which are exhausted efficiently from the exhaust outlet.
JP24831787A 1987-09-30 1987-09-30 Parallel flat board electrode type plasma etching device Pending JPS6489518A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24831787A JPS6489518A (en) 1987-09-30 1987-09-30 Parallel flat board electrode type plasma etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24831787A JPS6489518A (en) 1987-09-30 1987-09-30 Parallel flat board electrode type plasma etching device

Publications (1)

Publication Number Publication Date
JPS6489518A true JPS6489518A (en) 1989-04-04

Family

ID=17176281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24831787A Pending JPS6489518A (en) 1987-09-30 1987-09-30 Parallel flat board electrode type plasma etching device

Country Status (1)

Country Link
JP (1) JPS6489518A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03138381A (en) * 1989-10-20 1991-06-12 Ibiden Co Ltd Electrode plate for plasma etching
US5556500A (en) * 1994-03-03 1996-09-17 Tokyo Electron Limited Plasma etching apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52114444A (en) * 1976-03-22 1977-09-26 Nippon Telegraph & Telephone Plasma etching method
JPS5687667A (en) * 1979-12-20 1981-07-16 Toshiba Corp Reactive ion etching method
JPS5989774A (en) * 1982-11-10 1984-05-24 Mitsubishi Electric Corp Dry etching device
JPS6159833A (en) * 1984-08-31 1986-03-27 Hitachi Ltd Plasma treater

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52114444A (en) * 1976-03-22 1977-09-26 Nippon Telegraph & Telephone Plasma etching method
JPS5687667A (en) * 1979-12-20 1981-07-16 Toshiba Corp Reactive ion etching method
JPS5989774A (en) * 1982-11-10 1984-05-24 Mitsubishi Electric Corp Dry etching device
JPS6159833A (en) * 1984-08-31 1986-03-27 Hitachi Ltd Plasma treater

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03138381A (en) * 1989-10-20 1991-06-12 Ibiden Co Ltd Electrode plate for plasma etching
US5556500A (en) * 1994-03-03 1996-09-17 Tokyo Electron Limited Plasma etching apparatus

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