JPS6419775A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6419775A
JPS6419775A JP62175647A JP17564787A JPS6419775A JP S6419775 A JPS6419775 A JP S6419775A JP 62175647 A JP62175647 A JP 62175647A JP 17564787 A JP17564787 A JP 17564787A JP S6419775 A JPS6419775 A JP S6419775A
Authority
JP
Japan
Prior art keywords
built
fets
fet
different
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62175647A
Other languages
Japanese (ja)
Inventor
Masahiro Kato
Yutaka Sumino
Nobuo Shiga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP62175647A priority Critical patent/JPS6419775A/en
Publication of JPS6419775A publication Critical patent/JPS6419775A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To set different threshold voltages with ease for a plurality of FETs, built on one and the same substrate and designed for different threshold voltages, for the realization of a simplified manufacturing process by a method wherein a prescribed voltage is applied to an electrode built in the vicinity of one of the FETs for the FET to be provided with a threshold voltage different from those of the other FETs. CONSTITUTION:On a semi-insulating GaAs substrate 100, N<+>-type source and drain regions 12 and 13, richly implanted with Si, are formed for an FET 1, with an N-type channel region 14 poorly implanted with Si between them. On the source and drain regions 12 and 13, source and drain electrodes 15 and 16 are formed, to be in ohmic contact with them. A gate electrode 17 is built on the N-type channel region 14, with a Schottky contact between them. An outer electrode 31 is built near an end of the gate electrode 17 of the FET 1. When a threshold value is different from design, a prescribed control voltage YSG is applied to the outer electrode 31, which adjusts the threshold voltage to a required value.
JP62175647A 1987-07-14 1987-07-14 Semiconductor device Pending JPS6419775A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62175647A JPS6419775A (en) 1987-07-14 1987-07-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62175647A JPS6419775A (en) 1987-07-14 1987-07-14 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6419775A true JPS6419775A (en) 1989-01-23

Family

ID=15999751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62175647A Pending JPS6419775A (en) 1987-07-14 1987-07-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6419775A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0437194A2 (en) * 1990-01-05 1991-07-17 Sumitomo Electric Industries, Ltd. Schottky barrier field effect transistor
US5834802A (en) * 1996-01-23 1998-11-10 Nec Corporation Metal semiconductor field effect transistors having improved intermodulation distortion using different pinch-off voltages
JP2017130939A (en) * 2012-02-29 2017-07-27 株式会社半導体エネルギー研究所 Semiconductor device
JP2018190992A (en) * 2008-10-24 2018-11-29 株式会社半導体エネルギー研究所 Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0437194A2 (en) * 1990-01-05 1991-07-17 Sumitomo Electric Industries, Ltd. Schottky barrier field effect transistor
US5834802A (en) * 1996-01-23 1998-11-10 Nec Corporation Metal semiconductor field effect transistors having improved intermodulation distortion using different pinch-off voltages
JP2018190992A (en) * 2008-10-24 2018-11-29 株式会社半導体エネルギー研究所 Semiconductor device
JP2017130939A (en) * 2012-02-29 2017-07-27 株式会社半導体エネルギー研究所 Semiconductor device

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