JPS6419775A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6419775A JPS6419775A JP62175647A JP17564787A JPS6419775A JP S6419775 A JPS6419775 A JP S6419775A JP 62175647 A JP62175647 A JP 62175647A JP 17564787 A JP17564787 A JP 17564787A JP S6419775 A JPS6419775 A JP S6419775A
- Authority
- JP
- Japan
- Prior art keywords
- built
- fets
- fet
- different
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To set different threshold voltages with ease for a plurality of FETs, built on one and the same substrate and designed for different threshold voltages, for the realization of a simplified manufacturing process by a method wherein a prescribed voltage is applied to an electrode built in the vicinity of one of the FETs for the FET to be provided with a threshold voltage different from those of the other FETs. CONSTITUTION:On a semi-insulating GaAs substrate 100, N<+>-type source and drain regions 12 and 13, richly implanted with Si, are formed for an FET 1, with an N-type channel region 14 poorly implanted with Si between them. On the source and drain regions 12 and 13, source and drain electrodes 15 and 16 are formed, to be in ohmic contact with them. A gate electrode 17 is built on the N-type channel region 14, with a Schottky contact between them. An outer electrode 31 is built near an end of the gate electrode 17 of the FET 1. When a threshold value is different from design, a prescribed control voltage YSG is applied to the outer electrode 31, which adjusts the threshold voltage to a required value.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62175647A JPS6419775A (en) | 1987-07-14 | 1987-07-14 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62175647A JPS6419775A (en) | 1987-07-14 | 1987-07-14 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6419775A true JPS6419775A (en) | 1989-01-23 |
Family
ID=15999751
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62175647A Pending JPS6419775A (en) | 1987-07-14 | 1987-07-14 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6419775A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0437194A2 (en) * | 1990-01-05 | 1991-07-17 | Sumitomo Electric Industries, Ltd. | Schottky barrier field effect transistor |
US5834802A (en) * | 1996-01-23 | 1998-11-10 | Nec Corporation | Metal semiconductor field effect transistors having improved intermodulation distortion using different pinch-off voltages |
JP2017130939A (en) * | 2012-02-29 | 2017-07-27 | 株式会社半導体エネルギー研究所 | Semiconductor device |
JP2018190992A (en) * | 2008-10-24 | 2018-11-29 | 株式会社半導体エネルギー研究所 | Semiconductor device |
-
1987
- 1987-07-14 JP JP62175647A patent/JPS6419775A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0437194A2 (en) * | 1990-01-05 | 1991-07-17 | Sumitomo Electric Industries, Ltd. | Schottky barrier field effect transistor |
US5834802A (en) * | 1996-01-23 | 1998-11-10 | Nec Corporation | Metal semiconductor field effect transistors having improved intermodulation distortion using different pinch-off voltages |
JP2018190992A (en) * | 2008-10-24 | 2018-11-29 | 株式会社半導体エネルギー研究所 | Semiconductor device |
JP2017130939A (en) * | 2012-02-29 | 2017-07-27 | 株式会社半導体エネルギー研究所 | Semiconductor device |
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