JPS6461065A - Field-effect transistor and manufacture thereof - Google Patents

Field-effect transistor and manufacture thereof

Info

Publication number
JPS6461065A
JPS6461065A JP21944687A JP21944687A JPS6461065A JP S6461065 A JPS6461065 A JP S6461065A JP 21944687 A JP21944687 A JP 21944687A JP 21944687 A JP21944687 A JP 21944687A JP S6461065 A JPS6461065 A JP S6461065A
Authority
JP
Japan
Prior art keywords
region
film
implanted
silicon
type gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21944687A
Other languages
Japanese (ja)
Inventor
Kazuyoshi Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP21944687A priority Critical patent/JPS6461065A/en
Publication of JPS6461065A publication Critical patent/JPS6461065A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To stably perform an FET having a high current driving capacity and a high speed with good reproducibility by providing an opposite conductivity type buried region to that of an active region in a semi-insulating gallium arsenide substrate in contact with the lower side of the active region under a drain electrode. CONSTITUTION:Silicon ions are implanted to the surface of a semi-insulating GaAs substrate 1, heat treated to form an n<-> type GaAs region 2, a silicon oxide film is removed, a tungsten silicide layer is deposited, and selectively anisotropically etched to form a gate electrode 3. Then, a silicon oxide film 4 is deposited on the surface, removed by anisotropically etching with the film 4 remaining only on the sidewall of the electrode 3, silicon is ion implanted to form an n<+> type GaAs region 5. Thereafter, after the film 4 is removed, a photoresist film 6 is formed, magnesium ions 10 are implanted to form a p-type GaAs region 7.
JP21944687A 1987-09-01 1987-09-01 Field-effect transistor and manufacture thereof Pending JPS6461065A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21944687A JPS6461065A (en) 1987-09-01 1987-09-01 Field-effect transistor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21944687A JPS6461065A (en) 1987-09-01 1987-09-01 Field-effect transistor and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6461065A true JPS6461065A (en) 1989-03-08

Family

ID=16735538

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21944687A Pending JPS6461065A (en) 1987-09-01 1987-09-01 Field-effect transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6461065A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000114276A (en) * 1998-10-08 2000-04-21 Oki Electric Ind Co Ltd Manufacture of semiconductor element
US10654617B2 (en) 2015-04-29 2020-05-19 Khs Gmbh Container and method for producing a container of said type

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000114276A (en) * 1998-10-08 2000-04-21 Oki Electric Ind Co Ltd Manufacture of semiconductor element
US10654617B2 (en) 2015-04-29 2020-05-19 Khs Gmbh Container and method for producing a container of said type

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