JPS6415934A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6415934A
JPS6415934A JP17218087A JP17218087A JPS6415934A JP S6415934 A JPS6415934 A JP S6415934A JP 17218087 A JP17218087 A JP 17218087A JP 17218087 A JP17218087 A JP 17218087A JP S6415934 A JPS6415934 A JP S6415934A
Authority
JP
Japan
Prior art keywords
photo
resist
resist film
etched
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17218087A
Other languages
Japanese (ja)
Inventor
Nobuo Motodo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP17218087A priority Critical patent/JPS6415934A/en
Publication of JPS6415934A publication Critical patent/JPS6415934A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To remove a photo-resist quickly without deteriorating the character istics of a semiconductor element by etching only a cured layer in the surface of the photo-resist particularly under the conditions of low power-short time by O2 gas at the final step of a dry etching method. CONSTITUTION:A silicon oxide film 2 is formed onto a semiconductor substrate 1 consisting of silicon, a photo-resist film 3 is shaped, and a desired pattern is formed through a photolithographic method. The silicon oxide film 2 is etched by using a dry etching device. A cured section on the photo-resist film 3 is etched by employing O2 gas through a step etching method. The cured section is etched for five min under the conditions of 50W power and 10 (Pa) pressure in order to prevent the lowering of the breakdown strength of a Semi conductor device at that time. The cured layer in the surface of the photo-resist film 3 is removed when etching is completed, thus getting rid of the remaining photo- resist film 3 only through wet peeling.
JP17218087A 1987-07-10 1987-07-10 Manufacture of semiconductor device Pending JPS6415934A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17218087A JPS6415934A (en) 1987-07-10 1987-07-10 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17218087A JPS6415934A (en) 1987-07-10 1987-07-10 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6415934A true JPS6415934A (en) 1989-01-19

Family

ID=15937060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17218087A Pending JPS6415934A (en) 1987-07-10 1987-07-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6415934A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7772946B2 (en) 2005-07-20 2010-08-10 Halla Climate Control Corp. Electric power connection part of electromagnetic clutch field coil assembly

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6252934A (en) * 1985-08-31 1987-03-07 Nippon Gakki Seizo Kk Formation of selective mask
JPS62271435A (en) * 1986-05-20 1987-11-25 Fujitsu Ltd Expoliating method for resist

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6252934A (en) * 1985-08-31 1987-03-07 Nippon Gakki Seizo Kk Formation of selective mask
JPS62271435A (en) * 1986-05-20 1987-11-25 Fujitsu Ltd Expoliating method for resist

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7772946B2 (en) 2005-07-20 2010-08-10 Halla Climate Control Corp. Electric power connection part of electromagnetic clutch field coil assembly

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