JPS6415934A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6415934A JPS6415934A JP17218087A JP17218087A JPS6415934A JP S6415934 A JPS6415934 A JP S6415934A JP 17218087 A JP17218087 A JP 17218087A JP 17218087 A JP17218087 A JP 17218087A JP S6415934 A JPS6415934 A JP S6415934A
- Authority
- JP
- Japan
- Prior art keywords
- photo
- resist
- resist film
- etched
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To remove a photo-resist quickly without deteriorating the character istics of a semiconductor element by etching only a cured layer in the surface of the photo-resist particularly under the conditions of low power-short time by O2 gas at the final step of a dry etching method. CONSTITUTION:A silicon oxide film 2 is formed onto a semiconductor substrate 1 consisting of silicon, a photo-resist film 3 is shaped, and a desired pattern is formed through a photolithographic method. The silicon oxide film 2 is etched by using a dry etching device. A cured section on the photo-resist film 3 is etched by employing O2 gas through a step etching method. The cured section is etched for five min under the conditions of 50W power and 10 (Pa) pressure in order to prevent the lowering of the breakdown strength of a Semi conductor device at that time. The cured layer in the surface of the photo-resist film 3 is removed when etching is completed, thus getting rid of the remaining photo- resist film 3 only through wet peeling.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17218087A JPS6415934A (en) | 1987-07-10 | 1987-07-10 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17218087A JPS6415934A (en) | 1987-07-10 | 1987-07-10 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6415934A true JPS6415934A (en) | 1989-01-19 |
Family
ID=15937060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17218087A Pending JPS6415934A (en) | 1987-07-10 | 1987-07-10 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6415934A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7772946B2 (en) | 2005-07-20 | 2010-08-10 | Halla Climate Control Corp. | Electric power connection part of electromagnetic clutch field coil assembly |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6252934A (en) * | 1985-08-31 | 1987-03-07 | Nippon Gakki Seizo Kk | Formation of selective mask |
JPS62271435A (en) * | 1986-05-20 | 1987-11-25 | Fujitsu Ltd | Expoliating method for resist |
-
1987
- 1987-07-10 JP JP17218087A patent/JPS6415934A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6252934A (en) * | 1985-08-31 | 1987-03-07 | Nippon Gakki Seizo Kk | Formation of selective mask |
JPS62271435A (en) * | 1986-05-20 | 1987-11-25 | Fujitsu Ltd | Expoliating method for resist |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7772946B2 (en) | 2005-07-20 | 2010-08-10 | Halla Climate Control Corp. | Electric power connection part of electromagnetic clutch field coil assembly |
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