JPS56158443A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56158443A
JPS56158443A JP6123280A JP6123280A JPS56158443A JP S56158443 A JPS56158443 A JP S56158443A JP 6123280 A JP6123280 A JP 6123280A JP 6123280 A JP6123280 A JP 6123280A JP S56158443 A JPS56158443 A JP S56158443A
Authority
JP
Japan
Prior art keywords
layer
sio2
polysi
type
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6123280A
Other languages
Japanese (ja)
Inventor
Junichi Matsunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6123280A priority Critical patent/JPS56158443A/en
Publication of JPS56158443A publication Critical patent/JPS56158443A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76245—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using full isolation by porous oxide silicon, i.e. FIPOS techniques

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To separate elements from each other by a method wherein an N-layer piled on a P type substrate through an SiO2 film is partially converted into a P- layer, the N-layer is oxydized under the mask of P-layer after making it porous to remove SiO2 by etching. CONSTITUTION:SiO2 12 on a P type Si substrate 1 is piled with P type polySi 13. Giving a resisting mask 14 P type impurities ions are injected to make a P-layer 15. Subsequently the P type impurities ions are injected into an N-layer 13 to selectively convert a surface portion into the P-layer 16. Next in the HF solution only the P-layer 16 is anodized to be converted porous. (In the case of the N-layer it is treated in the HF solution under ultraviolet irradiation). By wet oxydation only polySi is converted into SiO2 17. Next under the mask of polySi 16 SiO2 17 is removed by reactive ions etching and further the polySi 16 is removed to form a field reverse prevention ions treated layer and an insulating film in the self-matching relation. This constitution can separate the device with high density without lowering performance.
JP6123280A 1980-05-10 1980-05-10 Manufacture of semiconductor device Pending JPS56158443A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6123280A JPS56158443A (en) 1980-05-10 1980-05-10 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6123280A JPS56158443A (en) 1980-05-10 1980-05-10 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56158443A true JPS56158443A (en) 1981-12-07

Family

ID=13165263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6123280A Pending JPS56158443A (en) 1980-05-10 1980-05-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56158443A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5342803A (en) * 1993-02-03 1994-08-30 Rohm, Co., Ltd. Method for isolating circuit elements for semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5342803A (en) * 1993-02-03 1994-08-30 Rohm, Co., Ltd. Method for isolating circuit elements for semiconductor device

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