JPS6435917A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6435917A
JPS6435917A JP19176287A JP19176287A JPS6435917A JP S6435917 A JPS6435917 A JP S6435917A JP 19176287 A JP19176287 A JP 19176287A JP 19176287 A JP19176287 A JP 19176287A JP S6435917 A JPS6435917 A JP S6435917A
Authority
JP
Japan
Prior art keywords
film
sidewall
silicon oxide
oxide film
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19176287A
Other languages
Japanese (ja)
Inventor
Keisuke Suzui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP19176287A priority Critical patent/JPS6435917A/en
Publication of JPS6435917A publication Critical patent/JPS6435917A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To enable a fine contact hole to be made regardless of the limit of the photolithographic performance by a method wherein a silicon oxide film below a sidewall of an oxide film formed on the side of a fluoric acid resistant film is etched away through the intermediary of the sidewall. CONSTITUTION:A photoresist film 3 as fluoric acid resistant film formed on an silicon oxide film 2 on a silicon substrate is patterned to remove specified part. The silicon oxide film 2 is formed on overall surface of the photoresist film 3 and then a sidewall 4 comprising silicon oxide is formed on the side of the photoresist film 3 by anisotropical etching process. Next, another photoresist film 5 coated on overall surface is etched away to expose the surface of the sidewall 4 to the part above the surface of photoresist film 5A. Then the side-wall 4 and the silicon oxide film 2 below the sidewall 4 are etched away to make a contact hole 6. Finally, the photoresist films 3, 5A are removed. Through these procedures, the fine contact hole can be made regardless of the limit of the photolithographic performance.
JP19176287A 1987-07-30 1987-07-30 Manufacture of semiconductor device Pending JPS6435917A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19176287A JPS6435917A (en) 1987-07-30 1987-07-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19176287A JPS6435917A (en) 1987-07-30 1987-07-30 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6435917A true JPS6435917A (en) 1989-02-07

Family

ID=16280088

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19176287A Pending JPS6435917A (en) 1987-07-30 1987-07-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6435917A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5254503A (en) * 1992-06-02 1993-10-19 International Business Machines Corporation Process of making and using micro mask
US5595941A (en) * 1994-06-01 1997-01-21 Mitsubishi Denki Kabushiki Kaisha Method of forming fine patterns

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5254503A (en) * 1992-06-02 1993-10-19 International Business Machines Corporation Process of making and using micro mask
US5595941A (en) * 1994-06-01 1997-01-21 Mitsubishi Denki Kabushiki Kaisha Method of forming fine patterns
US5688723A (en) * 1994-06-01 1997-11-18 Mitsubishi Denki Kabushiki Kaisha Method of forming fine patterns
US5710066A (en) * 1994-06-01 1998-01-20 Mitsubishi Denki Kabushiki Kaisha Method of forming fine patterns

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