JPS6410619A - Vapor phase epitaxial growth method - Google Patents
Vapor phase epitaxial growth methodInfo
- Publication number
- JPS6410619A JPS6410619A JP16596787A JP16596787A JPS6410619A JP S6410619 A JPS6410619 A JP S6410619A JP 16596787 A JP16596787 A JP 16596787A JP 16596787 A JP16596787 A JP 16596787A JP S6410619 A JPS6410619 A JP S6410619A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- gaas
- temperature
- carrier gas
- crystal substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To avoid a deterioration in an FET characteristic due to a pileup of Si, the roughened surface or the like by a method wherein a temperature of a substrate is raised in a stream of a carrier gas containing arsine (AsH3). CONSTITUTION:In a method to grow a GaAs crystal layer on a single crystal substrate whose temperature is kept at a prescribed value bg a VPE method by using AsCl3 as an As source, metal Ga as a Ga source and H2 as a carrier gas, a temperature of the single crystal substrate is raised to a prescribed temperature value in a stream of the carrier gas containing AsH3. If the single crystal substrate whose lattice constant does not differ from that of GaAs or differs from that of GaAs slightly is used, it is possible to favorably obtain a GaAs single crystal layer whose crystallinity is good. When the GaAs single crystal layer is grown, the temperature of the single crystal substrate is usually kept at 700-750 deg.C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16596787A JPS6410619A (en) | 1987-07-02 | 1987-07-02 | Vapor phase epitaxial growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16596787A JPS6410619A (en) | 1987-07-02 | 1987-07-02 | Vapor phase epitaxial growth method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6410619A true JPS6410619A (en) | 1989-01-13 |
Family
ID=15822411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16596787A Pending JPS6410619A (en) | 1987-07-02 | 1987-07-02 | Vapor phase epitaxial growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6410619A (en) |
-
1987
- 1987-07-02 JP JP16596787A patent/JPS6410619A/en active Pending
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