JPS6449215A - Epitaxial growth - Google Patents
Epitaxial growthInfo
- Publication number
- JPS6449215A JPS6449215A JP20686887A JP20686887A JPS6449215A JP S6449215 A JPS6449215 A JP S6449215A JP 20686887 A JP20686887 A JP 20686887A JP 20686887 A JP20686887 A JP 20686887A JP S6449215 A JPS6449215 A JP S6449215A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- grown
- substrate
- gallium
- dislocation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To form an gallium arsenide layer having less dislocation and high quality on a substrate by growing a superlattice layer having mean lattice constant coincident with that of the layer grown in a later step, and forming the layer thereon. CONSTITUTION:A gallium arsenide layer 3 is grown on a silicon substrate 1. Then, a superlattice layer 4 having mean lattice constant coincident with that of a gallium arsenide layer 2 is grown thereon. The layer 2 is grown thereon. The layer 4 is formed of gallium phosphide-indium phosphide, gallium phosphide/gallium arsenide mixed crystal-indium phosphide/gallium phosphide mixed crystal. Then, a dislocation is suppressed by the layer 4, a dislocation occurred in a boundary between the substrate 1 and the layer 3 is bent in a direction perpendicular to the growing direction and escaped. Thus, the layer 2 having less dislocation and high quality is formed on the substrate 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20686887A JPS6449215A (en) | 1987-08-19 | 1987-08-19 | Epitaxial growth |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20686887A JPS6449215A (en) | 1987-08-19 | 1987-08-19 | Epitaxial growth |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6449215A true JPS6449215A (en) | 1989-02-23 |
Family
ID=16530368
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20686887A Pending JPS6449215A (en) | 1987-08-19 | 1987-08-19 | Epitaxial growth |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6449215A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5159413A (en) * | 1990-04-20 | 1992-10-27 | Eaton Corporation | Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate |
-
1987
- 1987-08-19 JP JP20686887A patent/JPS6449215A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5159413A (en) * | 1990-04-20 | 1992-10-27 | Eaton Corporation | Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate |
US5164359A (en) * | 1990-04-20 | 1992-11-17 | Eaton Corporation | Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate |
US5356831A (en) * | 1990-04-20 | 1994-10-18 | Eaton Corporation | Method of making a monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6415912A (en) | Semiconductor device | |
EP1101841A3 (en) | Substrate for epitaxy of III-V compounds and a method for producing the same | |
EP0253611A3 (en) | Method of epitaxially growing gallium arsenide on silicon | |
JPS56138917A (en) | Vapor phase epitaxial growth | |
JPS52152164A (en) | Epitaxial wafer of group iii-v compound | |
EP0283392A3 (en) | Compound semiconductor epitaxial wafer | |
JPS6449215A (en) | Epitaxial growth | |
JPS5598823A (en) | Manufacture of single crystal element | |
JPS57128092A (en) | Imbedded type semiconductor laser device | |
TW374206B (en) | Method of manufacturing compound semiconductor epitaxial wafers | |
JPS6439713A (en) | Epitaxial crystal growing method | |
JPS6459806A (en) | Manufacture of transverse superlattice | |
JPS62291909A (en) | Gaas epitaxial growth method | |
EP0382036A3 (en) | Epitaxial film growth using low pressure mocvd | |
JPS6453407A (en) | Compound semiconductor substrate | |
ES2004276A6 (en) | Semiconductor device including an epitaxial layer on a lattice-mismatched single crystal substrate. | |
KR920700315A (en) | Compound semiconductor wafer | |
JPS6449216A (en) | Semiconductor crystal growth | |
JPS5587423A (en) | Semiconductor device | |
JPS6457786A (en) | Manufacture of semiconductor laser device | |
JPS6450415A (en) | Manufacture of semiconductor device | |
JPS56130913A (en) | Manufacture of semiconductor device | |
JPS57106117A (en) | Method for liquid phase epitaxial growth | |
JPS63140520A (en) | Heteroepitaxy method of gaas on different type substrate | |
JPH02177320A (en) | Manufacture of hetero epitaxial thin film |