JPS6449215A - Epitaxial growth - Google Patents

Epitaxial growth

Info

Publication number
JPS6449215A
JPS6449215A JP20686887A JP20686887A JPS6449215A JP S6449215 A JPS6449215 A JP S6449215A JP 20686887 A JP20686887 A JP 20686887A JP 20686887 A JP20686887 A JP 20686887A JP S6449215 A JPS6449215 A JP S6449215A
Authority
JP
Japan
Prior art keywords
layer
grown
substrate
gallium
dislocation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20686887A
Other languages
Japanese (ja)
Inventor
Akio Hayafuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP20686887A priority Critical patent/JPS6449215A/en
Publication of JPS6449215A publication Critical patent/JPS6449215A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To form an gallium arsenide layer having less dislocation and high quality on a substrate by growing a superlattice layer having mean lattice constant coincident with that of the layer grown in a later step, and forming the layer thereon. CONSTITUTION:A gallium arsenide layer 3 is grown on a silicon substrate 1. Then, a superlattice layer 4 having mean lattice constant coincident with that of a gallium arsenide layer 2 is grown thereon. The layer 2 is grown thereon. The layer 4 is formed of gallium phosphide-indium phosphide, gallium phosphide/gallium arsenide mixed crystal-indium phosphide/gallium phosphide mixed crystal. Then, a dislocation is suppressed by the layer 4, a dislocation occurred in a boundary between the substrate 1 and the layer 3 is bent in a direction perpendicular to the growing direction and escaped. Thus, the layer 2 having less dislocation and high quality is formed on the substrate 1.
JP20686887A 1987-08-19 1987-08-19 Epitaxial growth Pending JPS6449215A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20686887A JPS6449215A (en) 1987-08-19 1987-08-19 Epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20686887A JPS6449215A (en) 1987-08-19 1987-08-19 Epitaxial growth

Publications (1)

Publication Number Publication Date
JPS6449215A true JPS6449215A (en) 1989-02-23

Family

ID=16530368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20686887A Pending JPS6449215A (en) 1987-08-19 1987-08-19 Epitaxial growth

Country Status (1)

Country Link
JP (1) JPS6449215A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5159413A (en) * 1990-04-20 1992-10-27 Eaton Corporation Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5159413A (en) * 1990-04-20 1992-10-27 Eaton Corporation Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate
US5164359A (en) * 1990-04-20 1992-11-17 Eaton Corporation Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate
US5356831A (en) * 1990-04-20 1994-10-18 Eaton Corporation Method of making a monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate

Similar Documents

Publication Publication Date Title
JPS6415912A (en) Semiconductor device
EP1101841A3 (en) Substrate for epitaxy of III-V compounds and a method for producing the same
EP0253611A3 (en) Method of epitaxially growing gallium arsenide on silicon
JPS56138917A (en) Vapor phase epitaxial growth
JPS52152164A (en) Epitaxial wafer of group iii-v compound
EP0283392A3 (en) Compound semiconductor epitaxial wafer
JPS6449215A (en) Epitaxial growth
JPS5598823A (en) Manufacture of single crystal element
JPS57128092A (en) Imbedded type semiconductor laser device
TW374206B (en) Method of manufacturing compound semiconductor epitaxial wafers
JPS6439713A (en) Epitaxial crystal growing method
JPS6459806A (en) Manufacture of transverse superlattice
JPS62291909A (en) Gaas epitaxial growth method
EP0382036A3 (en) Epitaxial film growth using low pressure mocvd
JPS6453407A (en) Compound semiconductor substrate
ES2004276A6 (en) Semiconductor device including an epitaxial layer on a lattice-mismatched single crystal substrate.
KR920700315A (en) Compound semiconductor wafer
JPS6449216A (en) Semiconductor crystal growth
JPS5587423A (en) Semiconductor device
JPS6457786A (en) Manufacture of semiconductor laser device
JPS6450415A (en) Manufacture of semiconductor device
JPS56130913A (en) Manufacture of semiconductor device
JPS57106117A (en) Method for liquid phase epitaxial growth
JPS63140520A (en) Heteroepitaxy method of gaas on different type substrate
JPH02177320A (en) Manufacture of hetero epitaxial thin film