JPS6395626A - Applying device of resist - Google Patents
Applying device of resistInfo
- Publication number
- JPS6395626A JPS6395626A JP24138386A JP24138386A JPS6395626A JP S6395626 A JPS6395626 A JP S6395626A JP 24138386 A JP24138386 A JP 24138386A JP 24138386 A JP24138386 A JP 24138386A JP S6395626 A JPS6395626 A JP S6395626A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- resist
- gas
- resist solution
- resist film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000000243 solution Substances 0.000 claims abstract description 23
- 238000002347 injection Methods 0.000 claims abstract description 10
- 239000007924 injection Substances 0.000 claims abstract description 10
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 abstract description 6
- 239000012530 fluid Substances 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Coating Apparatus (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明は、レジストの塗布装置に関するものである。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a resist coating device.
（従来の技術）
従来のレジストａ布装置としては、例えば第３図に示す
ようなものがある。すなわち、このレジストの塗布装置
は上部にレジスト溶液２を供給する供給口ｌを、下部に
レジスト溶液２を塗布する基板３′ｉｉよびこの基板３
を水平に保持し、回転させるスピナ４を備えている。(Prior Art) As a conventional resist a cloth device, there is one shown in FIG. 3, for example. That is, this resist coating device has a supply port 1 for supplying the resist solution 2 in the upper part, and a substrate 3'ii to which the resist solution 2 is applied and the substrate 3 in the lower part.
It is equipped with a spinner 4 that holds the machine horizontally and rotates it.
このレジスト＝ｉ布装置では、第３図に示すようｌこ供
給ロエからレジスト溶液２を基板３の中央部に滴下させ
、スピナ４を回転させ遠心力ｌこより基板平面上に全面
にわたって分散させ、第４図に示すように基板表面にレ
ジスト膜５を形成させるものである。In this resist=i-cloth device, as shown in FIG. 3, the resist solution 2 is dripped onto the center of the substrate 3 from a supply source, and the spinner 4 is rotated to disperse it over the entire surface of the substrate due to centrifugal force. As shown in FIG. 4, a resist film 5 is formed on the surface of the substrate.
しかしながら、上記のように遠心力によりレジスト溶液
２を基板３千面上に分散させレジスト膜５を形成させる
場合、レジスト溶液２の流れは遠心力の方向、つまり基
板３の回転中心から放射状に半径方向に向く流れとなる
。ところで、基板３千面上には第５図に示すように凹凸
状のエツチング・パターンが設けられており、レジスト
溶液２の流れは、この凹凸状のエツチングφパターンの
段差６でせきとめられ、これより下流ではレジスト溶液
２の流れが不均一になり、レジスト膜には第６図に示す
ように基板３中心から放射状に不均一な領域７いわゆる
ウェーク・パターンが生じてしまうという問題があうな
。However, when the resist solution 2 is dispersed over 3,000 surfaces of the substrate by centrifugal force to form the resist film 5 as described above, the flow of the resist solution 2 is in the direction of the centrifugal force, that is, in a radial radius from the center of rotation of the substrate 3. The flow will be in the direction. Incidentally, as shown in FIG. 5, an uneven etching pattern is provided on the 3,000-sided substrate, and the flow of the resist solution 2 is stopped by the step 6 of the uneven etching φ pattern. Further downstream, the flow of the resist solution 2 becomes non-uniform, resulting in the formation of non-uniform regions 7 radially from the center of the substrate 3, so-called wake patterns, in the resist film as shown in FIG.
（発明が解決しようとする問題点）
上記のように従来のレジスト塗布装置では、基板上に設
けられたエツチング・パターンの凹凸状の段差のため、
基板回転中心から放射状にレジスト溶液の流れに不均一
な領域を生じ、レジスト膜が基板全域にわたって均一に
形成されない恐れがあった。(Problems to be Solved by the Invention) As mentioned above, in the conventional resist coating apparatus, due to the uneven steps of the etching pattern provided on the substrate,
Non-uniform regions may occur in the flow of the resist solution radially from the center of rotation of the substrate, and there is a risk that the resist film may not be formed uniformly over the entire substrate.
そこで本発明は、上記の問題点を解決するもので、基板
全域にわたって均一なレジスト膜が形成できるレジスト
の塗布装置の提供を目的としている。SUMMARY OF THE INVENTION The present invention solves the above-mentioned problems, and aims to provide a resist coating apparatus that can form a uniform resist film over the entire substrate.
（問題点を解決するための手段）
上記目的を達成するために本発明においては、レジスト
溶液が滴下された基板を回転させた時に作用する遠心力
によって、レジスト溶液に生じる流れパターンを乱すよ
うなガスを噴射するガス噴射口を設けている。(Means for Solving the Problems) In order to achieve the above object, the present invention provides a method that disturbs the flow pattern generated in the resist solution by the centrifugal force that acts when the substrate onto which the resist solution is dropped is rotated. A gas injection port is provided to inject gas.
（作用）
このような構成により、回転させられる基板上に凹凸状
のエツチングパターンによって生じる流れが不均一なウ
ェークパターンが、ガスの噴射による流体力によって緩
和されるため、より均一なレジスト膜が得られる。(Function) With this configuration, the wake pattern in which the flow is uneven, which is caused by the uneven etching pattern on the rotated substrate, is alleviated by the fluid force generated by the gas jet, so that a more uniform resist film can be obtained. It will be done.
（実施例）
以下、図面を参照して本発明の詳細な説明するが、第３
図及び第４図と同一部分若しくは相当する部分には同一
符号を付してその説明は省略する。(Example) The present invention will be described in detail below with reference to the drawings.
The same parts or corresponding parts as those in the figures and FIG.
第１図においては、スピナ４に保持される基板３上方で
基板中心からずれた位置にガスを噴射するガス噴射口ｌ
Ｏを設けている。この、ガス噴射口１０よりガスをレジ
スト溶液に吹きつけ、レジスト溶液に流体力を作用させ
てウェークを緩和させている。In FIG. 1, a gas injection port l that injects gas at a position offset from the center of the substrate above the substrate 3 held by the spinner 4
O is provided. Gas is blown onto the resist solution from the gas injection port 10, and a fluid force is applied to the resist solution to alleviate the wake.
第２図は、ガス噴射口１１の先端がスリット状に形成さ
れているもので、レジスト溶液ｌこ作用する流体力が均
一化される。In FIG. 2, the tip of the gas injection port 11 is formed into a slit shape, so that the fluid force acting on the resist solution is made uniform.
また、上記実施例では、ガス噴射口１０，１１を基板３
と垂直に設け、垂直方向にガスを噴射しているが、角度
をつけて噴射してもよい。Further, in the above embodiment, the gas injection ports 10 and 11 are connected to the substrate 3.
Although the gas is installed perpendicularly to the cylinder and the gas is injected in the vertical direction, it may also be injected at an angle.
以上説明してきたように、本発明によれば、従来生じて
いたエツチング・パターンの凹凸状の段差ｌこ起因する
基板の半径方向にのびるレジスト膜の不均一領域が緩和
されて、組成及び膜厚均一なレジスト膜が得られる。As explained above, according to the present invention, the non-uniform regions of the resist film extending in the radial direction of the substrate caused by the uneven steps of the etching pattern that have conventionally occurred are alleviated, and the composition and film thickness are improved. A uniform resist film can be obtained.
第１図は１本発明のレジストの塗布装置の一実施例を示
す側面図、第２図は、本発明の他の実施例を示す側面図
及び部分断面、第３図と第４図は従来のレジストの塗布
装置を示す側面図、第５図と第６図は従来の問題点を示
す説明図である。
ｌ・・・供給口、２・・・レジスト溶液、３・・・基板
、４・・・スピナ（回転手段）、５・・・レジスト膜、
１ｏ・・・ガス噴射口、１１・・・ガス噴射口。FIG. 1 is a side view showing one embodiment of a resist coating apparatus according to the present invention, FIG. 2 is a side view and partial cross section showing another embodiment of the present invention, and FIGS. 3 and 4 are conventional ones. FIGS. 5 and 6 are side views showing a resist coating apparatus, and are explanatory diagrams showing problems in the conventional method. l... Supply port, 2... Resist solution, 3... Substrate, 4... Spinner (rotating means), 5... Resist film,
1o...Gas injection port, 11...Gas injection port.
Claims (1)
よりレジスト膜が形成される基板を保持するスピナと、
このスピナを回転させ前記レジスト溶液に遠心力を作用
させる回転手段と、前記遠心力によって生じる前記レジ
スト溶液の流れパターンを乱すガスを前記レジスト溶液
に噴射するガス噴射口と、を具備することを特徴とする
レジストの塗布装置。a supply port for supplying a resist solution; a spinner for holding a substrate on which a resist film is formed by the resist solution;
A rotating means for rotating the spinner to apply a centrifugal force to the resist solution, and a gas injection port for injecting a gas into the resist solution that disturbs the flow pattern of the resist solution caused by the centrifugal force. Resist coating equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24138386A JPS6395626A (en) | 1986-10-13 | 1986-10-13 | Applying device of resist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24138386A JPS6395626A (en) | 1986-10-13 | 1986-10-13 | Applying device of resist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6395626A true JPS6395626A (en) | 1988-04-26 |
Family
ID=17073466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24138386A Pending JPS6395626A (en) | 1986-10-13 | 1986-10-13 | Applying device of resist |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6395626A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5472502A (en) * | 1993-08-30 | 1995-12-05 | Semiconductor Systems, Inc. | Apparatus and method for spin coating wafers and the like |
| US5824361A (en) * | 1994-08-05 | 1998-10-20 | Tdk Corporation | Method forming a uniform photoresist film using gas flow |
| US7018943B2 (en) | 1994-10-27 | 2006-03-28 | Asml Holding N.V. | Method of uniformly coating a substrate |
| WO2007047284A1 (en) * | 2005-10-19 | 2007-04-26 | Tokyo Electron Limited | Reduction of iso-dense field thickness bias through gas jet for gapfill process |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55100545A (en) * | 1979-01-26 | 1980-07-31 | Matsushita Electric Ind Co Ltd | Rotary coating method and rotary coating apparatus |
| JPS60109229A (en) * | 1983-11-18 | 1985-06-14 | Hitachi Ltd | Spin treatment device |
| JPS61219136A (en) * | 1985-03-25 | 1986-09-29 | Iwatsu Electric Co Ltd | Apparatus for rotationally applying resist |
-
1986
- 1986-10-13 JP JP24138386A patent/JPS6395626A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55100545A (en) * | 1979-01-26 | 1980-07-31 | Matsushita Electric Ind Co Ltd | Rotary coating method and rotary coating apparatus |
| JPS60109229A (en) * | 1983-11-18 | 1985-06-14 | Hitachi Ltd | Spin treatment device |
| JPS61219136A (en) * | 1985-03-25 | 1986-09-29 | Iwatsu Electric Co Ltd | Apparatus for rotationally applying resist |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5472502A (en) * | 1993-08-30 | 1995-12-05 | Semiconductor Systems, Inc. | Apparatus and method for spin coating wafers and the like |
| US5824361A (en) * | 1994-08-05 | 1998-10-20 | Tdk Corporation | Method forming a uniform photoresist film using gas flow |
| US6037007A (en) * | 1994-08-05 | 2000-03-14 | Tdk Corporation | Method of forming a uniform photoresist film using gas flow |
| US7018943B2 (en) | 1994-10-27 | 2006-03-28 | Asml Holding N.V. | Method of uniformly coating a substrate |
| WO2007047284A1 (en) * | 2005-10-19 | 2007-04-26 | Tokyo Electron Limited | Reduction of iso-dense field thickness bias through gas jet for gapfill process |
| US7435692B2 (en) | 2005-10-19 | 2008-10-14 | Tokyo Electron Limited | Gas jet reduction of iso-dense field thickness bias for gapfill process |
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