JPS6393135A - Manufacture of semiconductor substrate - Google Patents
Manufacture of semiconductor substrateInfo
- Publication number
- JPS6393135A JPS6393135A JP23957286A JP23957286A JPS6393135A JP S6393135 A JPS6393135 A JP S6393135A JP 23957286 A JP23957286 A JP 23957286A JP 23957286 A JP23957286 A JP 23957286A JP S6393135 A JPS6393135 A JP S6393135A
- Authority
- JP
- Japan
- Prior art keywords
- wafers
- hydrogen
- semiconductor substrate
- bond
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 235000012431 wafers Nutrition 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000001257 hydrogen Substances 0.000 claims abstract description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 14
- 239000012298 atmosphere Substances 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims abstract description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000006243 chemical reaction Methods 0.000 claims abstract description 7
- 150000002431 hydrogen Chemical class 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 229910002808 Si–O–Si Chemical group 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 229910001868 water Inorganic materials 0.000 description 6
- 238000005406 washing Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Landscapes
- Local Oxidation Of Silicon (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体デバイスに使用される半導体基板の
製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor substrate used in a semiconductor device.
従来、２枚のシリコン（Ｓｉ）ウェハを接着して半導体
基板を形成する方法として、Ｓｉ−Ｓｉ間の結合では、
第２図（ａ）〜（ｃ）に示すように、Ｓｉウェハ１の表
面を水洗後、親水処理を行ったのち、１０００℃，ｒ’
ｉｚＷ囲気中で熱処理を行い、両Ｓｉウェハ１間にＳｉ
−０−Ｓｉ結合を生じさせ、２枚のＳｉウェハ１を密着
させ半導体基板を形成シテイタ（１９８６年２月号ＮＩ
ＫＫＥＩ ＭＩＣＲＯＤＥＶＩＣＥＳＰ４６〜Ｐ４８参
照）。Conventionally, as a method of bonding two silicon (Si) wafers to form a semiconductor substrate, in the bonding between Si-Si,
As shown in FIGS. 2(a) to (c), after washing the surface of the Si wafer 1 with water and performing hydrophilic treatment,
Heat treatment is performed in an izW atmosphere, and Si is formed between both Si wafers 1.
-0-Si bond is generated and two Si wafers 1 are brought into close contact to form a semiconductor substrate.
(See KKEI MICRO DEVICE ESP46-P48).
上記のような従来の方法では、シリコン表面に特殊な親
水処理を行い、０ １１基をＳｉウェハ１上に形成し、
その後、高温Ｎ４囲気中でＯＨ基が反応し、Ｈ２Ｏ と
なり、脱水縮合を起こす結果、２枚のＳ１ウ工ハ１間に
Ｓｉ−０−Ｓｉ結合ができ、これにより接着を行ってい
た。In the conventional method as described above, a special hydrophilic treatment is performed on the silicon surface to form 0 11 groups on the Si wafer 1,
Thereafter, the OH groups reacted in a high-temperature N4 atmosphere to become H2O, causing dehydration condensation, and as a result, Si-0-Si bonds were formed between the two S1 wafers 1, and this bonded them.
しかるに、従来技術において安定に２枚のＳｉウェハ１
間の接着を図るなめには、特殊な親水処理が必要であっ
た。However, in the conventional technology, two Si wafers 1
A special hydrophilic treatment was required to create a bond between the two.
この発明は、上記のような従来の問題点を解消するため
になされたもので、特殊な親木処理を必要とせず２枚の
Ｓｉウェハを接着することができる半導体基板の製造方
法を得ることを目的とする。This invention was made in order to solve the above-mentioned conventional problems, and to provide a method for manufacturing a semiconductor substrate that can bond two Si wafers without requiring special parent wood treatment. With the goal.
この発明に係る半導体基板の製造方法は、２枚のＳｉウ
ェハを水素、もしくは水素と他の不活性ガス、もしくは
水素と酸化性ガスを含むガス雰囲気中で加熱処理し、両
Ｓｉウェハ間に５ｉ−０−８ｉ結合を形成し、両Ｓ１ウ
ェ八を接着するものである。The method for manufacturing a semiconductor substrate according to the present invention heat-treats two Si wafers in a gas atmosphere containing hydrogen, hydrogen and other inert gas, or hydrogen and an oxidizing gas, and A -0-8i bond is formed to bond both S1 wafers together.
この発明に係る半導体基板の製造方法おいては、水素を
含むガス雰囲気中において加熱処理し、Ｓ ｉ ウ、ｒ
−八人面の５ｉｏ２を５ｉＯｚ＋Ｈ，−３ｉＯ＋［■２
０の反応により効果的にＳｉＯに変化させ、簡ＱｔニＳ
ｉ ウェハ間に５ｉ−０−３ｉ結合を形成し、親水処
理なしで２枚のＳ１ウエノ＼が接着される。In the method for manufacturing a semiconductor substrate according to the present invention, heat treatment is performed in a gas atmosphere containing hydrogen, and S i u, r
- 5io2 of eight faces is 5iOz+H, -3iO+[■2
It is effectively converted to SiO by the reaction of
i Two S1 wafers are bonded together without hydrophilic treatment, forming a 5i-0-3i bond between the wafers.
〔実施例〕
この発明の一実施例を第１図（，１〜（ｃ）について説
明する。これらの図において、１はＳｉウェハで、この
Ｓｉウェハ１が２枚接着され、半導体基板が形成されろ
。２は前記Ｓｉ＋クエハ１を水洗後、Ｓ１ウ工ハ１表面
に形成された自然酸化膜（Ｓ１０□慢１５人）である。[Embodiment] An embodiment of the present invention will be explained with reference to FIGS. 2 is a natural oxide film (S10 □ Arrogant 15) formed on the surface of the S1 wafer 1 after washing the Si + wafer 1 with water.
この水洗完了後、自然酸化膜２を持つＳｉウェハ１を、
例えば水素雰囲気中で１１６０℃、３０分間加熱すると
、
ＳｉＯ□＋Ｈ２→Ｓ ｉ Ｏ＋Ｈ□０
Ｈ２０＋Ｓ １−＝Ｓ ｉＯ＋Ｈ２
等の反応を起こ１７．５ｉ−０−３ｉ結合がＳｉウェハ
１の間に形成され、２枚のＳｉウェハ１の接着が完了し
、半導体基板が形成される。After completing this water washing, the Si wafer 1 with the natural oxide film 2 is
For example, when heated at 1160°C for 30 minutes in a hydrogen atmosphere, reactions such as SiO□+H2→SiO+H□0 H20+S1-=SiO+H2 occur, and 17.5i-0-3i bonds are formed between the Si wafers 1. , the adhesion of the two Si wafers 1 is completed, and a semiconductor substrate is formed.
なお、上記実施例では、ＳｉＯ□は水洗後の自然酸化膜
２を利用したが、他の方法、例えばプラズマ酸化膜等で
８１０２を形成した後、Ｉ（２雰囲気中でＳ ｉ −０
−３ｉ ｉＩ！ｉ合を形成する方法を用いてもよい。In the above example, the natural oxide film 2 after washing with water was used for SiO□, but after forming 8102 using another method, for example, a plasma oxide film, SiO
-3i iI! A method of forming an i-coupling may also be used.
また、水素の他に不活性ガス（Ａｒ等）を混合した高温
ガス雰囲気中で接着する方法も、前記５１０２とＨ、の
反応を利用する方法であることはいうまでもない。Further, it goes without saying that a method of bonding in a high temperature gas atmosphere containing an inert gas (such as Ar) in addition to hydrogen is also a method that utilizes the reaction between 5102 and H.
また、Ｈ２と同時に他の酸化ガス（０□等）を含めＳｉ
Ｏ□を形成しながら、同時にＳ ｉ Ｏ２Ａ−Ｈ２の反
応によりＳ ｉ −０−Ｓ ｉ結合を形成する方法を用
いても同様の効果が得られろ。Also, at the same time as H2, other oxidizing gases (0□, etc.)
A similar effect may be obtained by using a method of forming O□ and at the same time forming a S i -0-S i bond through a reaction of S i O2A-H2.
この発明は以上説明したように、高）品ガス雰囲気とし
て水素、もしくは水素と他の不活性ガス、もｆ／ りは
水素と酸化性ガスを用い、Ｓｘウェハ表面でのＳｉＯ□
との反応により両Ｓｉウェハ間にＳｉ−Ｏ−Ｓ ｉ結合
を形成し、両Ｓｉウェハを接着するようにしたので、従
来のように特殊な親水処理を施す必要がなく、安定に２
枚のＳ１ウェハの接着ができろ効果がある。As explained above, this invention uses hydrogen, or hydrogen and another inert gas, or hydrogen and an oxidizing gas, as a high quality gas atmosphere to form a SiO□ on the surface of an Sx wafer.
As a result of the reaction between the two Si wafers, a Si-O-Si bond is formed between the two Si wafers, and the two Si wafers are bonded together.Therefore, there is no need for special hydrophilic treatment as in the past, and the two Si wafers can be stably bonded.
It is effective because two S1 wafers can be bonded together.
第１図（よこの発明の２枚のＳ」ウェハの接着方法の一
実施例を説明する工程図、第２図は従来の接着力法の工
程を示す図である。
図において、１はＳ１ウェハ、２は自然酸化］り（Ｓ１
０□）である。
なお、各図中の同一符号は同一または相当部分を示す、
。
代理人 大 岩 増 雄 （外２名）第１図
（ａ） （ｂ）
（ｃ）１°Ｓｉウェハ
第２図FIG. 1 is a process diagram illustrating an embodiment of the method of adhering two S'' wafers according to the present invention, and FIG. 2 is a diagram showing the steps of the conventional adhesive force method. In the figure, 1 is S1 Wafer, 2 is natural oxidation] (S1
0□). In addition, the same symbols in each figure indicate the same or corresponding parts.
. Agent Masuo Oiwa (2 others) Figure 1 (a) (b)
(c) 1°Si wafer Figure 2
Claims (1)
導体基板の製造方法において、前記高温ガス雰囲気とし
て水素、もしくは水素と他の不活性ガス、もしくは水素
と酸化性ガスを用い、前記Ｓｉウェハ表面でのＳｉＯ＿
２との反応により両Ｓｉウェハ間にＳｉ−Ｏ−Ｓｉ結合
を形成し、前記両Ｓｉウェハを接着せしめることを特徴
とする半導体基板の製造方法。In a method for manufacturing a semiconductor substrate in which two Si wafers are directly bonded in a high-temperature gas atmosphere, hydrogen, hydrogen and other inert gas, or hydrogen and an oxidizing gas are used as the high-temperature gas atmosphere, and the surface of the Si wafer is SiO_ in
1. A method for manufacturing a semiconductor substrate, characterized in that a Si--O--Si bond is formed between both Si wafers by reaction with No. 2, and the two Si wafers are bonded together.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23957286A JPS6393135A (en) | 1986-10-07 | 1986-10-07 | Manufacture of semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23957286A JPS6393135A (en) | 1986-10-07 | 1986-10-07 | Manufacture of semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6393135A true JPS6393135A (en) | 1988-04-23 |
Family
ID=17046790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23957286A Pending JPS6393135A (en) | 1986-10-07 | 1986-10-07 | Manufacture of semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6393135A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5451547A (en) * | 1991-08-26 | 1995-09-19 | Nippondenso Co., Ltd. | Method of manufacturing semiconductor substrate |
| US7963245B2 (en) | 2005-08-11 | 2011-06-21 | Canon Kabushiki Kaisha | Liquid application device and ink jet recording apparatus |
-
1986
- 1986-10-07 JP JP23957286A patent/JPS6393135A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5451547A (en) * | 1991-08-26 | 1995-09-19 | Nippondenso Co., Ltd. | Method of manufacturing semiconductor substrate |
| US7963245B2 (en) | 2005-08-11 | 2011-06-21 | Canon Kabushiki Kaisha | Liquid application device and ink jet recording apparatus |
| US8671880B2 (en) | 2005-08-11 | 2014-03-18 | Canon Kabushiki Kaisha | Liquid application device and ink jet recording apparatus |
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