JPS6360475B2 - - Google Patents

Info

Publication number
JPS6360475B2
JPS6360475B2 JP59035903A JP3590384A JPS6360475B2 JP S6360475 B2 JPS6360475 B2 JP S6360475B2 JP 59035903 A JP59035903 A JP 59035903A JP 3590384 A JP3590384 A JP 3590384A JP S6360475 B2 JPS6360475 B2 JP S6360475B2
Authority
JP
Japan
Prior art keywords
ion
ions
ion implantation
bubble
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59035903A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60182090A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP59035903A priority Critical patent/JPS60182090A/ja
Priority to CA000461786A priority patent/CA1231629A/en
Priority to US06/644,963 priority patent/US4568561A/en
Priority to EP84401728A priority patent/EP0139556B1/en
Priority to DE8484401728T priority patent/DE3478531D1/de
Publication of JPS60182090A publication Critical patent/JPS60182090A/ja
Publication of JPS6360475B2 publication Critical patent/JPS6360475B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
    • H01F41/34Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
JP59035903A 1983-08-30 1984-02-29 イオン注入バブルデバイスの作製方法 Granted JPS60182090A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59035903A JPS60182090A (ja) 1984-02-29 1984-02-29 イオン注入バブルデバイスの作製方法
CA000461786A CA1231629A (en) 1983-08-30 1984-08-24 Process for producing ion implanted bubble device
US06/644,963 US4568561A (en) 1983-08-30 1984-08-28 Process for producing ion implanted bubble device
EP84401728A EP0139556B1 (en) 1983-08-30 1984-08-29 Process for producing ion implanted bubble device
DE8484401728T DE3478531D1 (en) 1983-08-30 1984-08-29 Process for producing ion implanted bubble device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59035903A JPS60182090A (ja) 1984-02-29 1984-02-29 イオン注入バブルデバイスの作製方法

Publications (2)

Publication Number Publication Date
JPS60182090A JPS60182090A (ja) 1985-09-17
JPS6360475B2 true JPS6360475B2 (zh) 1988-11-24

Family

ID=12454983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59035903A Granted JPS60182090A (ja) 1983-08-30 1984-02-29 イオン注入バブルデバイスの作製方法

Country Status (1)

Country Link
JP (1) JPS60182090A (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0521917U (ja) * 1991-09-04 1993-03-23 株式会社長田中央研究所 逆根管拡大具
FR2774510B1 (fr) * 1998-02-02 2001-10-26 Soitec Silicon On Insulator Procede de traitement de substrats, notamment semi-conducteurs
JP4707275B2 (ja) * 2001-07-18 2011-06-22 日本ぱちんこ部品株式会社 遊技機用入賞装置及びそれを用いた遊技機

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6049616A (ja) * 1983-08-30 1985-03-18 Fujitsu Ltd イオン注入バブルデバイスの作製法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6049616A (ja) * 1983-08-30 1985-03-18 Fujitsu Ltd イオン注入バブルデバイスの作製法

Also Published As

Publication number Publication date
JPS60182090A (ja) 1985-09-17

Similar Documents

Publication Publication Date Title
US4937205A (en) Plasma doping process and apparatus therefor
JPS63194326A (ja) 半導体装置の製造方法
JPS60136230A (ja) 基板表面の整形装置
JPS6360475B2 (zh)
US4476152A (en) Method for production of magnetic bubble memory device
JPS6360476B2 (zh)
JPH035641B2 (zh)
EP0139556B1 (en) Process for producing ion implanted bubble device
JPS61131285A (ja) 磁気バブルメモリ素子製造方法
JP3155085B2 (ja) シリコン基板の溝形成方法
JPS6326478B2 (zh)
KR930000876B1 (ko) 질화막을 이용한 고에너지 이온 주입 저지방법
JPS6242390A (ja) 誘起異方性磁界増大法
JPS62286227A (ja) ドライエツチング装置
JPH01196815A (ja) 半導体の表面改質法
JP3196231B2 (ja) 水素プラズマ処理装置および水素プラズマ処理方法
JP2670393B2 (ja) イオン注入方法
JPS622623A (ja) 高密度プラズマの形成方法
JPH0614478Y2 (ja) 薄膜形成装置
JPH01243359A (ja) プラズマドーピング方法
JP3480092B2 (ja) 薄膜トランジスタの製造方法
JPS58150188A (ja) 磁気バブル素子の製造方法
JPS6018911A (ja) 磁気バブル素子の製造方法
JP2672185B2 (ja) 薄膜素子加工方法とその装置
JPS62200592A (ja) ハイブリツド型磁気バブルメモリ素子