JPH035641B2 - - Google Patents

Info

Publication number: JPH035641B2
Authority: JP; Japan
Prior art keywords: bubble; ion; implanted; wafer; crystal
Prior art date: 1983-08-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP58157068A

Other languages

English (en)

Japanese (ja)

Other versions

JPS6049616A (ja

Inventor

Keiichi Betsui

Tsutomu Myashita

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Fujitsu Ltd

Original Assignee

Fujitsu Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1983-08-30

Filing date

1983-08-30

Publication date

1991-01-28

1983-08-30 Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd

1983-08-30 Priority to JP58157068A priority Critical patent/JPS6049616A/ja

1984-08-24 Priority to CA000461786A priority patent/CA1231629A/en

1984-08-28 Priority to US06/644,963 priority patent/US4568561A/en

1984-08-29 Priority to DE8484401728T priority patent/DE3478531D1/de

1984-08-29 Priority to EP84401728A priority patent/EP0139556B1/en

1985-03-18 Publication of JPS6049616A publication Critical patent/JPS6049616A/ja

1991-01-28 Publication of JPH035641B2 publication Critical patent/JPH035641B2/ja

Status Granted legal-status Critical Current

Links

238000005468 ion implantation Methods 0.000 claims description 11
150000002500 ions Chemical class 0.000 claims description 10
239000013078 crystal Substances 0.000 claims description 9
238000004519 manufacturing process Methods 0.000 claims description 7
230000001678 irradiating effect Effects 0.000 claims description 3
235000012431 wafers Nutrition 0.000 description 13
239000007789 gas Substances 0.000 description 12
238000000034 method Methods 0.000 description 11
238000010586 diagram Methods 0.000 description 6
230000007935 neutral effect Effects 0.000 description 5
230000000694 effects Effects 0.000 description 4
238000003860 storage Methods 0.000 description 3
239000000758 substrate Substances 0.000 description 3
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
229910004298 SiO 2 Inorganic materials 0.000 description 2
230000001133 acceleration Effects 0.000 description 2
238000005516 engineering process Methods 0.000 description 2
ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 description 2
GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 2
238000002347 injection Methods 0.000 description 2
239000007924 injection Substances 0.000 description 2
230000005415 magnetization Effects 0.000 description 2
239000002245 particle Substances 0.000 description 2
238000001020 plasma etching Methods 0.000 description 2
241000047703 Nonion Species 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
230000007423 decrease Effects 0.000 description 1
238000005530 etching Methods 0.000 description 1
238000000605 extraction Methods 0.000 description 1
239000002223 garnet Substances 0.000 description 1
239000001307 helium Substances 0.000 description 1
229910052734 helium Inorganic materials 0.000 description 1
SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
150000002431 hydrogen Chemical class 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
239000007791 liquid phase Substances 0.000 description 1
229910052754 neon Inorganic materials 0.000 description 1
GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
238000006386 neutralization reaction Methods 0.000 description 1
230000003472 neutralizing effect Effects 0.000 description 1
229910000889 permalloy Inorganic materials 0.000 description 1
238000004904 shortening Methods 0.000 description 1
125000006850 spacer group Chemical group 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1

Landscapes

Physical Vapour Deposition (AREA)
Thin Magnetic Films (AREA)

JP58157068A 1983-08-30 1983-08-30 イオン注入バブルデバイスの作製法 Granted JPS6049616A (ja)

Priority Applications (5)

Application Number	Priority Date	Filing Date	Title
JP58157068A JPS6049616A (ja)	1983-08-30	1983-08-30	イオン注入バブルデバイスの作製法
CA000461786A CA1231629A (en)	1983-08-30	1984-08-24	Process for producing ion implanted bubble device
US06/644,963 US4568561A (en)	1983-08-30	1984-08-28	Process for producing ion implanted bubble device
DE8484401728T DE3478531D1 (en)	1983-08-30	1984-08-29	Process for producing ion implanted bubble device
EP84401728A EP0139556B1 (en)	1983-08-30	1984-08-29	Process for producing ion implanted bubble device

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP58157068A JPS6049616A (ja)	1983-08-30	1983-08-30	イオン注入バブルデバイスの作製法

Publications (2)

Publication Number	Publication Date
JPS6049616A JPS6049616A (ja)	1985-03-18
JPH035641B2 true JPH035641B2 (zh)	1991-01-28

Family

ID=15641522

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP58157068A Granted JPS6049616A (ja)	1983-08-30	1983-08-30	イオン注入バブルデバイスの作製法

Country Status (1)

Country	Link
JP (1)	JPS6049616A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN105202908A (zh) *	2015-11-03	2015-12-30	苏州市金翔钛设备有限公司	真空自耗电弧炉

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS60182091A (ja) *	1984-02-29	1985-09-17	Fujitsu Ltd	イオン注入バブルデバイスの作製方法
JPS60182090A (ja) *	1984-02-29	1985-09-17	Fujitsu Ltd	イオン注入バブルデバイスの作製方法

1983
- 1983-08-30 JP JP58157068A patent/JPS6049616A/ja active Granted

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN105202908A (zh) *	2015-11-03	2015-12-30	苏州市金翔钛设备有限公司	真空自耗电弧炉

Also Published As

Publication number	Publication date
JPS6049616A (ja)	1985-03-18

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