JPS6345367A - Film formation by transporting type sputtering - Google Patents
Film formation by transporting type sputteringInfo
- Publication number
- JPS6345367A JPS6345367A JP18822286A JP18822286A JPS6345367A JP S6345367 A JPS6345367 A JP S6345367A JP 18822286 A JP18822286 A JP 18822286A JP 18822286 A JP18822286 A JP 18822286A JP S6345367 A JPS6345367 A JP S6345367A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- film
- anode
- sputtered
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 25
- 230000015572 biosynthetic process Effects 0.000 title description 4
- 239000002245 particle Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 13
- 230000007246 mechanism Effects 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 9
- 238000009792 diffusion process Methods 0.000 abstract description 5
- 239000012535 impurity Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 36
- 230000008021 deposition Effects 0.000 description 8
- 239000011882 ultra-fine particle Substances 0.000 description 6
- 230000032258 transport Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- -1 full bending Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241001024304 Mino Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、全屈、半導体、絶縁体等の各挿脱の形成に利
用される輸送型スパックリング成膜法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a transport-type sputtering film forming method used for forming insertion/removal of materials such as full bending, semiconductors, and insulators.
（従来の技術）
従来、基板上に各種物質をスパッタして膜を形成するス
パッタリング法には、原理上２つの方式、すなわちプラ
ズマスパッタリング法とイオンビームスパッタリング法
が考えられている。さらに、これらのスパッタリング法
は電子の封じ込め方法や電極の形状等によって種々のス
パッタリング装置に区分されている。そして、これらの
スパッタリング装置では雰囲気ガスの圧力が１０２Ｐａ
（パスカル）程度以下の雰囲気中でスパックリング
及び膜形成が行われている。(Prior Art) Conventionally, two methods have been considered in principle for sputtering methods for forming films by sputtering various substances on a substrate, namely, plasma sputtering method and ion beam sputtering method. Furthermore, these sputtering methods are classified into various sputtering apparatuses depending on the method of confining electrons, the shape of the electrodes, and the like. In these sputtering devices, the pressure of the atmospheric gas is 102 Pa.
Spackling and film formation are performed in an atmosphere of (Pascal) or less.
（発明が解決しようとする問題点）
従来のスパッタリング装置では、陰極からスパッタされ
た原子であるスパッタ粒子は、雰囲気ガス中を散乱過程
あるいは拡散過程を経て飛来し、これらの過程に支配さ
れて膜形成がなされる。このため、１０２Ｐａ程度以上
の高圧力下では不パソタリング成膜ができない。また、
１０２Ｐａ程度以下の雰囲気中で膜形成を行うので、ス
パッタ粒子の平均自由行程が長くなるので、高エネルギ
ーのイオンや電子、また中性原子が基（反面上に入射す
るので、形成された膜に損傷を与える場合がある。さら
に、スパッタ粒子も平均自由行程が長いために真空遭内
で広い範囲にねたりスパッタ粒子が飛ぶので、基板上へ
の材料の回収率を高くすることが難しいという問題があ
る。さらに、近時ガスセンサや磁気メモリ媒体等に用い
られる各種超微粒子を生成するためには、従来のスパッ
タリング法を利用することができない場合が多い。(Problems to be Solved by the Invention) In conventional sputtering equipment, sputtered particles, which are atoms sputtered from a cathode, fly through an atmospheric gas through a scattering process or a diffusion process, and are controlled by these processes to form a film. A formation is made. For this reason, it is not possible to form a film by non-pastoring under a high pressure of about 102 Pa or higher. Also,
Since the film is formed in an atmosphere of about 102 Pa or less, the mean free path of the sputtered particles becomes long, so high-energy ions, electrons, and neutral atoms enter the formed film. In addition, since sputtered particles have a long mean free path, they tend to spread over a wide range in the vacuum environment, making it difficult to increase the recovery rate of material onto the substrate. Further, in order to generate various ultrafine particles used in recent gas sensors, magnetic memory media, etc., conventional sputtering methods cannot often be used.
（問題点を解決するための手段）
本発明に係るスパッタリング成膜法は、中空形状になさ
れた陽極内に、同じく中空形状になされたスパッタすべ
き原子からなる陰極を内挿して放電機構を構成し、該陰
極の一端側から他端側に設けた基板へ雰囲気ガスを通入
し、陰極内部で生成されたスパッタ粒子を前記雰囲気ガ
スの流れにより基板側へ輸送する方法である。(Means for Solving the Problems) In the sputtering film forming method according to the present invention, a discharge mechanism is constructed by inserting a hollow cathode made of atoms to be sputtered into a hollow anode. In this method, atmospheric gas is introduced from one end of the cathode to a substrate provided at the other end, and sputtered particles generated inside the cathode are transported to the substrate by the flow of the atmospheric gas.
（作用）
陽極と陰極間は、例えば２重筒構造になされており、こ
れらの間に電圧が印加され放電が行われる。この陰極内
に雰囲気ガス（例えばＡｒガス）を導入すると、イオン
化されたガス成分が電界に加速されて陰極に衝突しスパ
ッタ原子をはじき出す。かかる状態において、雰囲気ガ
スの流れに沿って陰極からスパッタされたスパッタ粒子
が輸送され、基板上に堆積される。(Function) The anode and cathode have, for example, a double cylinder structure, and a voltage is applied between them to cause discharge. When an atmospheric gas (for example, Ar gas) is introduced into the cathode, ionized gas components are accelerated by the electric field and collide with the cathode to eject sputtered atoms. In this state, sputtered particles sputtered from the cathode are transported along the flow of atmospheric gas and deposited on the substrate.
（実施例）
以下、本発明の実施例について図面を参照して説明する
。(Example) Hereinafter, an example of the present invention will be described with reference to the drawings.
第１図は、本発明に係る輸送型スパッタリング成膜法に
供されるスパッタリング装置の実施例を示す概略図であ
る。FIG. 1 is a schematic diagram showing an embodiment of a sputtering apparatus used in the transport type sputtering film forming method according to the present invention.
真空槽１は２つの排気系を有するとともに、雰囲気ガス
（本例ではＡｒガス）の導入系を有している。排気系と
しては、本例では高真空用の予備排気系としてバルブ２
の開閉によって真空槽１内を排気するオイル拡散ポンプ
３と、バルブ４の開閉によって排気する低真空用の大容
量排気系である油回転ポンプ５が設けられている。The vacuum chamber 1 has two exhaust systems as well as an introduction system for atmospheric gas (Ar gas in this example). In this example, the exhaust system uses valve 2 as a preliminary exhaust system for high vacuum.
An oil diffusion pump 3 which evacuates the inside of the vacuum chamber 1 by opening and closing a valve 4, and an oil rotary pump 5 which is a large capacity exhaust system for low vacuum which evacuates the inside of the vacuum chamber 1 by opening and closing a valve 4 are provided.
スパッタすべき金属原子からなる陰極６は、円筒形にな
されている。この陰極６は、同じく円筒形になされた陽
極７と絶縁体（例えばアルミナ等）８を介して一定間隔
を保持して内挿されている。The cathode 6 made of metal atoms to be sputtered has a cylindrical shape. This cathode 6 is interposed with an anode 7, which is also cylindrical, and an insulator (eg, alumina) 8 interposed therebetween at a constant distance.
なお、陰極６及び陽極７の形状は本例の如（円筒形の場
合に限らず中空形状であればよい。直流型ａ９は陰極６
と陽極７間で放電を起こすための電源で、陰極６側を９
Ｌ電位とし、陽極７を接地電位とする電圧が印加されて
いる。一方、Ａｒガスの導入系は陰極６の一端側（本例
では上端側）に設けたニードルバルブ１０の開閉によっ
て導入されるようになされている。陰極６の他端側（本
例では下端側）には、所定間隔をおいて、膜を堆積すべ
き基板１１が基板ホルダ１２上に載置されて設けられて
いる。陰極６と基板１１との間には、シャッター１４が
設けられており、このシャッター１４の開閉によって膜
堆積の開始タイミング及び堆積量の調整がなされる。さ
らに、真空槽１内の圧力を確認するための真空計１５及
び導入ガスの圧力を計測するための圧力計１６がそれぞ
れ設けられている。The shapes of the cathode 6 and the anode 7 are as shown in this example (not limited to cylindrical shapes, but may be hollow shapes. For the DC type a9, the cathode 6
This is a power supply for causing discharge between the anode 7 and the anode 7, and the cathode 6 side is connected to 9
A voltage is applied that sets the anode 7 to the L potential and sets the anode 7 to the ground potential. On the other hand, the Ar gas introduction system is configured to introduce Ar gas by opening and closing a needle valve 10 provided at one end side (in this example, the upper end side) of the cathode 6. On the other end side (lower end side in this example) of the cathode 6, a substrate 11 on which a film is to be deposited is placed on a substrate holder 12 at a predetermined interval. A shutter 14 is provided between the cathode 6 and the substrate 11, and opening and closing of the shutter 14 adjusts the timing of starting film deposition and the amount of deposition. Furthermore, a vacuum gauge 15 for checking the pressure inside the vacuum chamber 1 and a pressure gauge 16 for measuring the pressure of the introduced gas are provided, respectively.
第２図は、前記陰極６の形状を詳細に示す断面図である
。FIG. 2 is a sectional view showing the shape of the cathode 6 in detail.
本例の陰極６は軸方向に沿って向い合せに小孔１７が複
数個穿設されている。この小孔１７は、陰極６内のプラ
ズマ電位を陰極６の軸方向にわたって一定の値に保ち、
均一なスバ、り侵食を行わせる働きをする。すなわち、
陰極６と陽極７間の放電によって生成された電子がある
一定の割合でこの小孔１７を通して陽極７側に流れ込む
ことにより、陰極６内の放電が維持されるのである。In the cathode 6 of this example, a plurality of small holes 17 are formed facing each other along the axial direction. This small hole 17 maintains the plasma potential within the cathode 6 at a constant value in the axial direction of the cathode 6.
It works to cause uniform splintering and erosion. That is,
Electrons generated by the discharge between the cathode 6 and the anode 7 flow into the anode 7 side through the small holes 17 at a certain rate, thereby maintaining the discharge within the cathode 6.
前記雰囲気ガスであるＡｒガスには高純度なガスを使用
し、一定の流量で導入し、陰極６と陽極７との間で放電
を発生させ持続させる作用を果たすとともに、イオン化
されたＡｒガスが陰極６の内面に衝突し、陰極原子をス
パッタさせ、さらにこのスパッタされた粒子を基板１１
側に輸送する働きを有する。A high-purity Ar gas is used as the atmospheric gas, and it is introduced at a constant flow rate to generate and sustain a discharge between the cathode 6 and anode 7, and the ionized Ar gas The particles collide with the inner surface of the cathode 6 to sputter cathode atoms, and the sputtered particles are further transferred to the substrate 11.
It has the function of transporting to the side.
陰極６と陽極７との放電が開始することにより発生する
プラズマは、陰極６の内周面側と外周面側の双方の領域
に存在するが、陰極６の内周面側ではＴ電子の閉じ込め
作用により、外周面側に比べてプラズマ密度が高くなる
。この結果、陰極６に入射する正イオン（アルゴンイオ
ン）の量は、陰極６の内周面側の方が多くなり、スパッ
タ侵食も内周面側の方が多くなる。つまり、陰極６の内
周面がおもにスパックされることになり、このスパック
された粒子がＡｒガスの流れに乗って基板ｌｌ上に輸送
されることになる。Plasma generated by the start of discharge between the cathode 6 and the anode 7 exists on both the inner and outer peripheral surfaces of the cathode 6, but T electrons are confined on the inner peripheral surface of the cathode 6. Due to this action, the plasma density becomes higher than that on the outer peripheral surface side. As a result, the amount of positive ions (argon ions) incident on the cathode 6 is greater on the inner circumferential surface side of the cathode 6, and sputter erosion is also greater on the inner circumferential surface side. That is, the inner circumferential surface of the cathode 6 is mainly spun, and the spucked particles are transported onto the substrate 11 by the flow of Ar gas.
前記陰極６と陽極７との放電を維持するための圧力は、
陰極６と陽極７間の距離に関係するが、本例のスパッタ
リング装置では、陰極径に比べ陰極長を長くしており、
スパッタ粒子の平均自由行程がこの長さに比べて十分小
さくなるようにＡｒガスの圧力を決定しているので、ス
パッタ粒子は陰極６から外へ流出することがほとんどな
い。そこで、この陰極６内に高速でＡｒガスを導入する
ことにより、その流れにスパッタ粒子をのせて外部へ放
出させている。The pressure for maintaining discharge between the cathode 6 and anode 7 is:
Although it is related to the distance between the cathode 6 and the anode 7, in the sputtering apparatus of this example, the cathode length is longer than the cathode diameter.
Since the pressure of the Ar gas is determined so that the mean free path of the sputtered particles is sufficiently small compared to this length, the sputtered particles hardly flow out from the cathode 6. Therefore, by introducing Ar gas into the cathode 6 at high speed, sputtered particles are carried by the flow and released to the outside.
陰極６内に導入されるＡｒガスの流れは、スパッタ粒子
を外部へ押し出すためにいわゆる粘性流の働きをするこ
とが好ましい、このために例えば陰極６内の圧力が３０
０Ｐａ以上とすると、その時の平均自由行程は１０−２
ｃｍ程度以下となるので、例えば陰極内径を数龍とすれ
ばよい。そしてこの時、真空槽１内のＡｒガスの圧力は
、陰極６内の圧力より１桁程度低い値になっている。す
なわち、Ａ「ガスは粘性流となって、陰極６内を通過し
、圧力の十分低い領域へ噴出している状態になっている
。It is preferable that the flow of Ar gas introduced into the cathode 6 acts as a so-called viscous flow in order to push the sputtered particles to the outside.
If it is 0 Pa or more, then the mean free path is 10-2
Since it is about cm or less, the inner diameter of the cathode may be set to, for example, a few centimeters. At this time, the pressure of the Ar gas in the vacuum chamber 1 is about an order of magnitude lower than the pressure in the cathode 6. That is, A: The gas becomes a viscous flow, passes through the cathode 6, and is ejected to a region where the pressure is sufficiently low.
上記構成からなるスパッタリング装置において、基板１
１上に膜を堆積するためには、まず真空槽１内を前記オ
イル拡散ポンプ３の作動によって十分排気して、不純物
の影響を少なくした後に前記ニードルパルプ１０を開き
、高純度のＡ「ガスを黒人するとともに、前記油回転ポ
ンプ５を作動させ大容量の排気を行い、Ａｒガスの流れ
を設定する。次に、前記直流電源９を印加し、陰極６を
負電位とする放電を開始し、前記Ａｒガスのイオン化と
ともに、陰極６にアルゴンイオンを衝突させ、スパッタ
を開始する。そして、同じ（Ａｒガスの流れにより、こ
のスパッタ粒子を下方へ輸送させる。そして、この輸送
状態が定常状態になったのを一定時間後確認すると、前
記シャッター１４を開いて基板１１上に膜を形成する。In the sputtering apparatus having the above configuration, the substrate 1
In order to deposit a film on the vacuum chamber 1, first, the inside of the vacuum chamber 1 is sufficiently evacuated by operating the oil diffusion pump 3 to reduce the influence of impurities, and then the needle pulp 10 is opened and high-purity A gas At the same time, the oil rotary pump 5 is activated to exhaust a large volume of Ar gas, and the flow of Ar gas is set.Next, the DC power supply 9 is applied to start discharging the cathode 6 to a negative potential. As the Ar gas is ionized, argon ions collide with the cathode 6 to start sputtering. Then, the flow of the Ar gas transports the sputtered particles downward. Then, this transport state becomes a steady state. When this is confirmed after a certain period of time, the shutter 14 is opened to form a film on the substrate 11.
次に、上述したスパッタリング装置における実験例をグ
ラフを参照して説明する。Next, an experimental example using the above-mentioned sputtering apparatus will be explained with reference to graphs.
第３図ないし第５図に示すグラフを参照して説明する。This will be explained with reference to the graphs shown in FIGS. 3 to 5.
なお、以下に示す実験では、陰極の材料を銅（Ｃ１）に
よって作成し、陰極内径を８１、陽極内径を２０１１、
小孔１７のピッチ間隔をｌＱｍｍ、小孔１７の内径を５
龍に設定している。In the experiment shown below, the cathode material was made of copper (C1), the cathode inner diameter was 81, the anode inner diameter was 2011,
The pitch interval of the small holes 17 is lQmm, and the inner diameter of the small holes 17 is 5.
It is set as a dragon.
第３図は、前記直流型＃９の印加電圧とこの電圧による
放電電流の関係を示すグラフであり、このグラフによれ
ば、印加電圧が３５０ボルト以下の比較的低電圧で大き
な放電電流が得られており、この時に陰極６内で高いイ
オン化が行われているのが理解される。FIG. 3 is a graph showing the relationship between the applied voltage of the DC type #9 and the discharge current due to this voltage. According to this graph, a large discharge current can be obtained with a relatively low applied voltage of 350 volts or less. It is understood that high ionization occurs within the cathode 6 at this time.
なお、第３図ではガス導入口のアルゴン圧力を５４０Ｐ
ａとし、真空槽１内の圧力を２０Ｐａとしており、グラ
フ２０．２１．２２は陰極６の全長！（第２図参照）を
それぞれ１００ｓｓ、 １５０ｍ（３００ｍ−に変更し
た場合の特性を示している。In addition, in Figure 3, the argon pressure at the gas inlet is set to 540P.
a, the pressure inside the vacuum chamber 1 is 20 Pa, and graphs 20, 21, and 22 are the total length of the cathode 6! (See Figure 2) are changed to 100ss and 150m (300m), respectively.
第４図は、入力電力（印加電圧×放電電流）に対するス
パッタ膜の堆積速度（Ｄｅｐｏｓｉｔｉｏｎ ｒａｔ
ｅ、単位人／ｍ１ｎ）を示しており、このグラフはガス
導入口の、Ａ ｒガス圧力を５４０Ｐａとし、陰極６と
基板１１間の距離をｌ ｃｍとした場合であり、グラフ
２３．２４．２５はそれぞれ前記陰極６の全長ｌが１５
０論震、１００ｍｍ、３００１ｍの場合を示してる。同
図によれば、比較的低入力電力でも高速でスパッタ膜の
形成がＩｉ１！誌された。Figure 4 shows the deposition rate (Deposition rate) of sputtered film with respect to input power (applied voltage x discharge current).
e, unit person/m1n), and this graph shows the case where the Ar gas pressure at the gas inlet is 540 Pa, and the distance between the cathode 6 and the substrate 11 is l cm, and graphs 23.24. 25, the total length l of the cathode 6 is 15, respectively.
It shows the case of zero earthquake, 100mm, and 3001m. According to the figure, the sputtered film can be formed at high speed even with relatively low input power. It was published.
第５図は、スパッタ膜の堆積速度のＡｒガス圧力の依存
性を示すグラフである。FIG. 5 is a graph showing the dependence of the sputtered film deposition rate on Ar gas pressure.
陰極６と基板１１の距離をｌ ｃｎ＋とし、グラフ２６
はＪ＝１００ｉｍ、入力ミノＪ５５ｗ、グラフ２７は１
＝３００ ａｘ、入力電力１６０Ｗ、グラフ２８はｊ
！＝１５０ｍｎ、入力電力８０ｗの場合をそれぞれ示し
ている。また、これらの３つの特性と同し条件でＡｒの
流れがない場合におけるスパッタ膜の堆積速度はそれぞ
れ雰に近いので、Ａｒガスの流れが本例における膜形成
に重要な条件となっているのがわかる。The distance between the cathode 6 and the substrate 11 is l cn+, and graph 26
is J=100im, input mino J55w, graph 27 is 1
= 300 ax, input power 160W, graph 28 is j
! = 150 mn and the input power is 80 W. Furthermore, under the same conditions as these three characteristics, the deposition rate of the sputtered film in the absence of Ar flow is close to that of the atmosphere, so the flow of Ar gas is an important condition for film formation in this example. I understand.
なお、上述した実験例では陰極６をＣｕによって作成し
、Ｃｕ膜を生成する場合を例示したが、この他にＦ。膜
、Ｎ、膜や他の物質についても同様にスパッタ膜を生成
することができる。また、上述した実施例では陰極６と
陽極７とを２重筒構造に構成しているので、スパッタ粒
子は陰′ｆＩｉＡ６の下方だけに輸送され、一定範囲に
限って膜堆積を行うことができる。In addition, in the above-mentioned experimental example, the case where the cathode 6 was made of Cu and a Cu film was produced was exemplified, but in addition to this, F. Similarly, sputtered films can be produced using films, N, films, and other materials. Furthermore, in the embodiment described above, since the cathode 6 and the anode 7 have a double cylinder structure, the sputtered particles are transported only below the cathode 'fIiA6, and the film can be deposited only in a certain range. .
また、上述した実験例の他に本例の輸送型スバ・／クリ
ング成膜法を用いることで８微粒子が生成されるのを確
認した。すなわち、放電に要する入力電力を増した場合
に生成される膜を電子顕微鏡で観察すると、この粒径が
数１０人の超微粒子が生成されていた。これは、スパッ
タ粒子がＡｒガスに輸送されている間に相互に合体して
、超微粒子が生成されたと考えられる。よって、本例の
スパッタリング’Ｗｆｆのスパッタ条件をコントロール
すれば、スパッタ粒子が相互に合体して超微粒子が生成
される条件と、合体せずに原子上で基板１１まで到達す
る条件とを適宜変更することができるので、超微粒子と
通常のスパッタ粒子の生成切換を容易に行うことができ
る。Furthermore, in addition to the experimental examples described above, it was confirmed that 8 fine particles were produced by using the transport type Suba/Kling film forming method of this example. That is, when the film produced when the input power required for discharge was increased was observed with an electron microscope, ultrafine particles with a particle size of several tens of nanometers were produced. This is considered to be because the sputtered particles coalesced with each other while being transported by the Ar gas, and ultrafine particles were generated. Therefore, by controlling the sputtering conditions of the sputtering Wff in this example, the conditions under which sputtered particles coalesce with each other to produce ultrafine particles and the conditions under which sputtered particles reach the substrate 11 on atoms without coalescing can be changed as appropriate. Therefore, generation of ultrafine particles and normal sputtered particles can be easily switched.
（発明の効果）
以上述べたように、本発明によれば、従来よりも高圧力
下で高速でスパッタ膜の作成ができる。(Effects of the Invention) As described above, according to the present invention, a sputtered film can be formed at a higher speed and at a higher pressure than before.
このため、原子イオン等の平均自由行程が短い状態でス
パッタを行うことができるので、成長膜面に畜エネルギ
ー粒子が入射せず、膜の損傷が防止される。また、この
とき平均自由行程が短いので、スパッタ粒子は基板に対
し２次元的な広がりをもって入射して、いわゆるステノ
プカバレノジがよい。さらに、スパッタ粒子は雰囲気ガ
スの流れで輸送されるので、膜の堆積場所を任意にコン
トロールできる。また、陽極と陰極間に入力する電力を
制御することで、超微粒子の生成も可能となった。Therefore, since sputtering can be performed in a state where the mean free path of atomic ions or the like is short, energetic particles do not enter the surface of the grown film, and damage to the film is prevented. Further, since the mean free path is short at this time, the sputtered particles are incident on the substrate with a two-dimensional spread, resulting in a so-called stenop coverage technology. Furthermore, since the sputtered particles are transported by the flow of atmospheric gas, the location where the film is deposited can be controlled as desired. Furthermore, by controlling the power input between the anode and cathode, it has become possible to generate ultrafine particles.
第１図は本発明に係る輸送型スパッタリング成膜法に供
されるスパッタリング装置の全体構成を示すブロック図
、第２図は陽極と陰極の形状を詳細に示Ｔ断面図、第３
図ないし第５図は実験例を示すグラフであり、第３図は
印加電圧と放電電流の関係を例示するグラフ、第４図は
入力電力とスパッタ膜の堆積速度の関係を例示するグラ
フ、第５図はガス導入口のＡｒ圧力とスパッタ膜の堆積
速度の関係を例示するグラフである。
１・・・真空槽 ３・・・オイル拡散ポンプ５
・・・油回転ポンプ ６・・・陰極７・・・陽極
１１・・・基板１７・・・小孔FIG. 1 is a block diagram showing the overall configuration of a sputtering apparatus used in the transport type sputtering film forming method according to the present invention, FIG. 2 is a T cross-sectional view showing the shapes of an anode and a cathode in detail, and FIG.
5 to 5 are graphs showing experimental examples, FIG. 3 is a graph illustrating the relationship between applied voltage and discharge current, FIG. 4 is a graph illustrating the relationship between input power and sputtered film deposition rate, and FIG. FIG. 5 is a graph illustrating the relationship between the Ar pressure at the gas inlet and the deposition rate of the sputtered film. 1... Vacuum chamber 3... Oil diffusion pump 5
...Oil rotary pump 6...Cathode 7...Anode
11...Substrate 17...Small hole
Claims (1)
されたスパッタすべき原子からなる陰極を内挿して放電
機構を構成し、該陰極の一端側から他端側に設けた基板
へ雰囲気ガスを導入し、陰極内部で生成されたスパッタ
粒子を前記雰囲気ガスの流れにより基板側へ輸送するこ
とを特徴とする輸送型スパッタリング成膜法。1) A discharge mechanism is constructed by inserting a hollow cathode made of atoms to be sputtered into a hollow anode, and atmospheric gas is transferred from one end of the cathode to a substrate provided at the other end. A transport type sputtering film forming method characterized in that the sputtered particles generated inside the cathode are transported to the substrate side by the flow of the atmospheric gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18822286A JPS6345367A (en) | 1986-08-11 | 1986-08-11 | Film formation by transporting type sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18822286A JPS6345367A (en) | 1986-08-11 | 1986-08-11 | Film formation by transporting type sputtering |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6345367A true JPS6345367A (en) | 1988-02-26 |
| JPH0214427B2 JPH0214427B2 (en) | 1990-04-09 |
Family
ID=16219908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18822286A Granted JPS6345367A (en) | 1986-08-11 | 1986-08-11 | Film formation by transporting type sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6345367A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2287884A2 (en) | 2009-08-18 | 2011-02-23 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Gas flow sputter source |
| JP2013520573A (en) * | 2010-02-24 | 2013-06-06 | ティア・エービー | Plasma sputtering process for producing particles |
| CN103751305A (en) * | 2013-12-11 | 2014-04-30 | 内蒙古元和药业股份有限公司 | Drug for treatment of rheumatoid arthritis and preparation method thereof |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0399833U (en) * | 1990-01-31 | 1991-10-18 | ||
| CA2564539C (en) | 2005-11-14 | 2014-05-06 | Sulzer Metco Coatings B.V. | A method for coating of a base body with a platinum modified aluminide ptmal by means of a physical deposition out of the gas phase |
| WO2022009536A1 (en) * | 2020-07-07 | 2022-01-13 | ソニーグループ株式会社 | Sputtering apparatus and sputtering film forming method |
-
1986
- 1986-08-11 JP JP18822286A patent/JPS6345367A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2287884A2 (en) | 2009-08-18 | 2011-02-23 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Gas flow sputter source |
| DE102009037853B3 (en) * | 2009-08-18 | 2011-03-31 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Gas flow sputtering source |
| JP2013520573A (en) * | 2010-02-24 | 2013-06-06 | ティア・エービー | Plasma sputtering process for producing particles |
| CN103751305A (en) * | 2013-12-11 | 2014-04-30 | 内蒙古元和药业股份有限公司 | Drug for treatment of rheumatoid arthritis and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0214427B2 (en) | 1990-04-09 |
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